BFL4001

Ordering number : ENA1638 BFL4001 SANYO Semiconductors DATA SHEET BFL4001 Features • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. High-speed switching. Avalanche resistance guarantee. 10V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *4 Avalanche Current *5 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition*)3 Conditions Ratings 900 ±30 6.5 4.1 13 2.0 37 150 --55 to +150 237 6.5 Unit V V A A A W W °C °C mJ A Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=10mH, IAV=6.5A *5 L≤10mH, single pulse Marking : FL4001 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 31010QB TK IM TC-00002256 No. A1638-1/5 BFL4001 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=10mA, VGS=0V VDS=720V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=20V, ID=3.25A ID=3.25A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=6.5A VDS=200V, VGS=10V, ID=6.5A VDS=200V, VGS=10V, ID=6.5A IS=6.5A, VGS=0V 2.0 1.8 3.6 2.1 850 130 43 19 49 156 52 44 7.0 22 0.85 1.2 2.7 Ratings min 900 1.0 ±100 4.0 typ max Unit V mA nA V S Ω pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7509-002 10.0 3.2 3.5 7.2 4.5 2.8 16.1 16.0 0.9 1.2 0.75 14.0 3.6 1.2 0.7 123 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) 2.55 2.55 Switching Time Test Circuit PW=10μs D.C.≤0.5% VGS=10V D VDD=200V 0.6 Avalanche Resistance Test Circuit L ID=3.25A RL=61.5Ω VOUT 10V 0V BFL4001 BFL4001 50Ω VDD ≥50Ω RG G P.G RGS=50Ω S No. A1638-2/5 BFL4001 14 12 ID -- VDS Tc=25°C 10V 14 12 ID -- VGS VDS=20V Tc= --25°C Drain Current, ID -- A Drain Current, ID -- A 10 8 6 20V 7V 10 8 6 4 2 0 25°C 75°C 6V 4 2 0 5V VGS=4V 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6 7 8 9 10 Drain-to-Source Voltage, VDS -- V 6 RDS(on) -- VGS IT15294 7 Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc IT15295 ID=3.25A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 6 5 4 3 2 1 0 --50 4 Tc=75°C 3 2 25°C --25°C = V GS =3 I V, D 10 .25 A 1 0 4 5 6 7 8 9 10 11 12 13 14 15 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 7 | yfs | -- ID IT15296 3 2 10 7 5 3 2 1.0 7 5 Case Temperature, Tc -- °C IS -- VSD IT15297 Forward Transfer Admittance, | yfs | -- S 5 3 2 1.0 7 5 3 2 0.1 VDS=20V VGS=0V = Tc C 5° --2 °C 75 Source Current, IS -- A °C 25 Tc= 75°C 3 2 0.1 7 5 3 2 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 7 5 SW Time -- ID 5 7 10 IT15298 0.01 0.2 0.4 0.6 --25° C 0.8 25°C 1.0 1.2 IT15299 VDD=200V VGS=10V Ciss, Coss, Crss -- pF 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V f=1MHz Switching Time, SW Time -- ns 3 2 td (off) 1000 7 5 3 2 100 7 5 3 Ciss 100 7 5 3 2 tf tr Coss Crs s td(on) 10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 2 10 0 5 10 15 20 25 30 35 40 45 50 Drain Current, ID -- A IT15300 Drain-to-Source Voltage, VDS -- V IT15301 No. A1638-3/5 BFL4001 10 9 VGS -- Qg VDS=200V ID=6.5A Drain Current, ID -- A 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=13A (PW≤10μs) IDc(*1)=6.5A IDpack(*2)=4.1A DC 10 Gate-to-Source Voltage, VGS -- V μs 10 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50 1m s ms 10 0m 10 op on ati er s 0μ s Operation in this area is limited by RDS(on). Tc=25°C Single pulse 23 5 7 1.0 0.01 0.1 *1. Shows chip capability *2. SANYO's ideal heat dissipation condition 23 5 7 10 23 5 7100 23 Total Gate Charge, Qg -- nC 2.5 PD -- Ta IT15302 40 Drain-to-Source Voltage, VDS -- V PD -- Tc 57 1000 2 IT15303 Allowable Power Dissipation, PD -- W 2.0 Allowable Power Dissipation, PD -- W 37 35 30 25 20 15 10 5 0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 120 EAS -- Ta IT15304 Case Temperature, Tc -- °C IT15305 Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT10478 Ambient Temperature, Ta -- °C No. A1638-4/5 BFL4001 Note on usage : Since the BFL4001 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No. A1638-5/5