BFL4001_12

Ordering number : ENA1638A BFL4001 SANYO Semiconductors DATA SHEET BFL4001 Features • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications • • Low ON-resistance Avalanche resistance guarantee High-speed switching 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *4 Avalanche Current *5 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition)*3 Conditions Ratings 900 ±30 6.5 4.1 13 2.0 37 150 --55 to +150 223 6.5 Unit V V A A A W W °C °C mJ A Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=6.5A *5 L≤10mH, single pulse Package Dimensions unit : mm (typ) 7528-001 10.16 3.18 3.3 4.7 2.54 Product & Package Information • Package : TO-220F-3FS • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine Marking 6.68 15.87 Electrical Connection 2 15.8 3.23 FL4001 2.76 LOT No. 1 1.47 MAX 0.8 1 2 3 12.98 3 0.5 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3FS http://semicon.sanyo.com/en/network 22912 TKIM TC-00002729/31010QB TK IM TC-00002256 No.A1638-1/5 2.54 2.54 BFL4001 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=10mA, VGS=0V VDS=720V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=20V, ID=3.25A ID=3.25A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=6.5A VDS=200V, VGS=10V, ID=6.5A VDS=200V, VGS=10V, ID=6.5A IS=6.5A, VGS=0V 2.0 1.8 3.6 2.1 850 130 43 19 49 156 52 44 7.0 22 0.85 1.2 2.7 Ratings min 900 1.0 ±100 4.0 typ max Unit V mA nA V S Ω pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit PW=10μs D.C.≤0.5% VGS=10V D VDD=200V Avalanche Resistance Test Circuit L ID=3.25A RL=61.5Ω VOUT 10V 0V BFL4001 BFL4001 50Ω VDD ≥50Ω RG G P.G RGS=50Ω S 14 12 ID -- VDS Tc=25°C 10V 14 12 ID -- VGS VDS=20V Drain Current, ID -- A 10 8 6 Drain Current, ID -- A Tc= --25°C 10 8 6 4 2 0 20V 7V 25°C 75°C 6V 4 2 0 5V VGS=4V 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6 7 8 9 10 Drain-to-Source Voltage, VDS -- V IT15294 Gate-to-Source Voltage, VGS -- V IT15295 No.A1638-2/5 BFL4001 6 RDS(on) -- VGS ID=3.25A 7 6 5 4 3 2 1 0 --50 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 4 Tc=75°C 3 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 2 25°C --25°C =1 V GS 0 =3 I V, D .25 A 1 0 4 5 6 7 8 9 10 11 12 13 14 15 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 7 | yfs | -- ID IT15296 3 2 10 7 5 3 2 1.0 7 5 Case Temperature, Tc -- °C IS -- VSD IT15297 Forward Transfer Admittance, | yfs | -- S 5 3 2 1.0 7 5 3 2 0.1 VDS=20V VGS=0V Tc C 5° --2 = °C 75 Source Current, IS -- A °C 25 0.1 7 5 3 2 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 7 5 SW Time -- ID 5 7 10 IT15298 0.01 0.2 0.4 Tc= 7 3 2 0.6 --25° C 0.8 5°C 25°C 1.0 1.2 IT15299 VDD=200V VGS=10V Ciss, Coss, Crss -- pF 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V f=1MHz Switching Time, SW Time -- ns 3 2 td (off) 1000 7 5 3 2 100 7 5 3 Ciss 100 7 5 3 2 tf tr Coss Crs s td(on) 10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 2 10 0 5 10 15 20 25 30 35 40 45 50 Drain Current, ID -- A 10 9 IT15300 100 7 5 3 2 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO IT15301 Gate-to-Source Voltage, VGS -- V VDS=200V ID=6.5A Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50 IDP=13A (PW≤10μs) IDc(*1)=6.5A IDpack(*2)=4.1A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 10 10 1m 10 s ms DC 100 ms op er ati on μs 0μ s Operation in this area is limited by RDS(on). Tc=25°C Single pulse 23 5 7 1.0 0.01 0.1 *1. Shows chip capability *2. SANYO's ideal heat dissipation condition 23 5 7 10 23 5 7 100 23 5 71000 IT16791 Total Gate Charge, Qg -- nC IT15302 Drain-to-Source Voltage, VDS -- V No.A1638-3/5 BFL4001 2.5 PD -- Ta Allowable Power Dissipation, PD -- W 40 37 35 30 25 20 15 10 5 0 PD -- Tc Allowable Power Dissipation, PD -- W 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 120 EAS -- Ta IT15304 Case Temperature, Tc -- °C IT15305 Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT10478 Ambient Temperature, Ta -- °C No.A1638-4/5 BFL4001 Note on usage : Since the BFL4001 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2012. Specifications and information herein are subject to change without notice. PS No.A1638-5/5