Ordering number : ENA1907
BMS3003
SANYO Semiconductors
DATA SHEET
BMS3003
Features
• • •
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance RDS(on)1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ±20 --78 --312 2.0 40 150 --55 to +150 420 --60 Unit V V A A W W °C °C mJ A
Note : *1 VDD=--36V, L=100μH, IAV=--60A (Fig.1) *2 L≤100μH, Single pulse
Package Dimensions
unit : mm (typ) 7525-002
10.0 3.5 3.2 4.5 2.8
Product & Package Information
• Package : TO-220ML(LS) • JEITA, JEDEC : SC-67, SOT-186A • Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine
Marking
Electrical Connection
2
16.0
7.2
MS3003
LOT No.
3.6
1.6 1.2
1
14.0
0.75 123 0.7
3
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML(LS)
2.55
2.55
2.4
http://semicon.sanyo.com/en/network
D2210QA TKIM TC-00002546 No. A1907-1/5
BMS3003
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr IS=--78A, VGS=0V See Fig.3 IS=--78A, VGS=0V, di/dt=--100A/μs VDS=--36V, VGS=--10V, ID=--78A See Fig.2 VDS=--20V, f=1MHz Conditions ID=- 1mA, VGS=0V VDS=--60V, VGS=0V VGS=±16V, VDS=0V VDS=- 10V, ID=- 1mA VDS=- 10V, ID=--39A ID=--39A, VGS=- 10V ID=--39A, VGS=- 4V Ratings min --60 --10 ±10 --1.2 130 5.0 6.5 13200 1300 950 90 360 1200 680 285 35 70 --0.95 150 470 --1.5 6.5 9.0 --2.6 typ max Unit V μA μA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
VIN VDD= --36V
D ≥50Ω RG G
L
0V --10V
VIN BMS3003 PW=10μs D.C.≤1% G D
ID= --39A RL=0.92Ω VOUT
0V --10V
50Ω
S
VDD
P.G
BMS3003 50Ω S
Fig.3 Reverse Recovery Time Test Circuit
D L
BMS3003
G
S
VDD
Driver MOSFET
No. A1907-2/5
BMS3003
--160 --140
ID -- VDS
--8 V --6 V
Tc=25°C
--160
ID -- VGS
Tc= --2 5°C
--1.5 --2.0 --2.5
V --4
Drain Current, ID -- A
--140 --120 --100 --80 --60 --40 --20 0
Drain Current, ID -- A
--100 --80 --60 --40
--1
--120
--20 0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
--0.5
--1.0
25° C
VGS= --3V
Tc=7 5°C --25 °C
--3.0
--3.5
--4.0
25° C
--4.5
0V
75 ° C
VDS= --10V
--5.0
Drain-to-Source Voltage, VDS -- V
16
RDS(on) -- VGS
IT16239 16
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
IT16240
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
14 12 10 8 6 4 2 0 0
ID= --39A Single pulse
Single pulse
14 12 10 8 6 4 2 0 --50
Tc=75°C
25°C --25°C
--39A I D= --4V, --39A = VGS , I D= --10V = VGS
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
| yfs | -- ID
IT16241 --1000 7 5 3 2
Case Temperature, Tc -- °C
IS -- VSD
IT16242
Forward Transfer Admittance, | yfs | -- S
VDS= --10V
VGS=0V Single pulse
25
°C
Source Current, IS -- A
--100 7 5 3 2 --10 7 5 3 2
5 7 --100 IT16243
--0.1 7 5 3 2 --0.01
0
--0.2
--0.4
Tc= 75°C 25°C
--0.6
--25°C
--0.8
5°C --2 c= T C 75°
--1.0 7 5 3 2
--1.0
--1.2
--1.4
Drain Current, ID -- A
10000 7 5
SW Time -- ID
VDD= --36V VGS= --10V
td(off)
100000 7 5
3 2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
IT16244
f=1MHz
Switching Time, SW Time -- ns
3 2 1000 7 5 3 2 100 7 5 3 2 10 --0.1 2 3 5 7 --1.0
tf
tr
Ciss, Coss, Crss -- pF
Ciss
10000 7 5
3 2 1000 7 5
Coss
td(on)
Crss
3 2 2 3 5 7 --10 2 3 5 7 --100 IT16245
100
0
--5
--10
--15
--20
--25
--30 IT16246
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
No. A1907-3/5
BMS3003
--10 --9
VGS -- Qg
VDS= --36V ID= --78A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
--8 --7 --6 --5 --4 --3 --2 --1 0 0 50 100 150 200 250 300 IT16247
--1000 7 5 3 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2
ASO
IDP= --312A (PW≤10μs) ID= --78A
Operation in this area is limited by RDS(on).
1m s 1 10 0ms 0m DC s op era tio n
10
0μ s
10 μs
--0.1 --0.1
Tc=25°C Single pulse
2 3 5 7 --1.0 2 3 5 7 --10 2 3
Total Gate Charge, Qg -- nC
2.5
PD -- Ta
Drain-to-Source Voltage, VDS -- V
45
PD -- Tc
5 7 --100 IT16248
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
0 20 40 60 80 100 120 140 160
40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160
2.0
1.5
1.0
0.5
0
Ambient Temperature, Ta -- °C
120
EAS -- Ta
IT16249
Case Temperature, Tc -- °C
IT16250
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT16251
No. A1907-4/5
BMS3003
Note on usage : Since the BMS3003 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of December, 2010. Specifications and information herein are subject to change without notice.
PS No. A1907-5/5