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BMS3004

BMS3004

  • 厂商:

    SANYO(三洋)

  • 封装:

  • 描述:

    BMS3004 - P-Channel Silicon MOSFET General-Purpose Switching Device Applications - Sanyo Semicon Dev...

  • 详情介绍
  • 数据手册
  • 价格&库存
BMS3004 数据手册
Ordering number : ENA1908 BMS3004 SANYO Semiconductors DATA SHEET BMS3004 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=6.5mΩ (typ.) Input capacitance Ciss=13400pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --75 ±20 --68 --272 2.0 40 150 --55 to +150 380 --54 Unit V V A A W W °C °C mJ A Note : *1 VDD=--48V, L=100μH, IAV=--54A (Fig.1) *2 L≤100μH, Single pulse Package Dimensions unit : mm (typ) 7525-002 10.0 3.5 3.2 4.5 2.8 Product & Package Information • Package : TO-220ML(LS) • JEITA, JEDEC : SC-67, SOT-186A • Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine Marking Electrical Connection 2 16.0 7.2 MS3004 LOT No. 3.6 1.6 1.2 1 14.0 0.75 123 0.7 3 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML(LS) 2.55 2.55 2.4 http://semicon.sanyo.com/en/network 10511QA TKIM TC-00002547 No. A1908-1/5 BMS3004 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr IS=--68A, VGS=0V See Fig.3 IS=--68A, VGS=0V, di/dt=--100A/μs VDS=--48V, VGS=--10V, ID=--68A See Fig.2 VDS=--20V, f=1MHz Conditions ID=- 1mA, VGS=0V VDS=--75V, VGS=0V VGS=±16V, VDS=0V VDS=- 10V, ID=- 1mA VDS=- 10V, ID=--34A ID=--34A, VGS=- 10V ID=--34A, VGS=- 4V Ratings min --75 --10 ±10 --1.2 120 6.5 8.3 13400 1000 740 70 245 1400 650 300 30 70 --0.9 146 470 --1.5 8.5 11.4 --2.6 typ max Unit V μA μA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit VIN VDD= --48V D ≥50Ω RG G L 0V --10V VIN BMS3004 PW=10μs D.C.≤1% G D ID= --34A RL=1.4Ω VOUT 0V --10V 50Ω S VDD P.G BMS3004 50Ω S Fig.3 Reverse Recovery Time Test Circuit D L BMS3004 G S VDD Driver MOSFET No. A1908-2/5 BMS3004 --140 --120 ID -- VDS --8 V Tc=25°C --140 ID -- VGS Tc= --25 ° 25 °C --1.5 --2.0 --2.5 --6 V --4 V --120 Drain Current, ID -- A --1 --100 --80 --60 --40 Drain Current, ID -- A --100 --80 --60 --40 --20 0 VGS= --3V --20 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 0 --0.5 --1.0 --25 °C Tc=7 5°C --3.0 --3.5 25° C --4.0 --4.5 0V C 75°C VDS= --10V --5.0 Drain-to-Source Voltage, VDS -- V 20 RDS(on) -- VGS IT16252 20 Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc IT16253 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 18 16 14 12 10 8 6 4 2 0 0 --1 --2 --3 --4 --5 --6 --7 ID= --34A Single pulse Single pulse 18 16 14 12 10 8 6 4 2 0 --50 --25 0 25 50 75 100 125 150 Tc=75°C 25°C --25°C 4A = --3 A V, I D --34 = --4 I= VGS 0V, D = --1 VGS --8 --9 --10 Gate-to-Source Voltage, VGS -- V 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 | yfs | -- ID IT16254 --1000 7 5 3 2 Case Temperature, Tc -- °C IS -- VSD IT16255 Forward Transfer Admittance, | yfs | -- S VDS= --10V VGS=0V Single pulse °C 25 Source Current, IS -- A --100 7 5 3 2 --10 7 5 3 2 Tc= 75°C 0 --0.2 --0.4 25°C --0.6 5 7 --100 IT16256 --0.1 7 5 3 2 --0.01 --25°C --0.8 = Tc C 5° --2 °C 75 --1.0 7 5 3 2 --1.0 --1.2 --1.4 Drain Current, ID -- A 10000 7 5 SW Time -- ID VDD= --48V VGS= --10V td(off) 100000 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V IT16257 f=1MHz Switching Time, SW Time -- ns 3 2 1000 7 5 3 2 100 7 5 3 2 10 --0.1 2 3 5 7 --1.0 tf Ciss, Coss, Crss -- pF Ciss 10000 7 5 3 2 1000 7 5 tr Coss td(on) Crss 3 2 2 3 5 7 --10 2 3 5 7 --100 IT16258 100 0 --5 --10 --15 --20 --25 --30 IT16259 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V No. A1908-3/5 BMS3004 --10 --9 VGS -- Qg VDS= --48V ID= --68A Gate-to-Source Voltage, VGS -- V Drain Current, ID -- A --8 --7 --6 --5 --4 --3 --2 --1 0 0 50 100 150 200 250 300 IT16260 --1000 7 5 3 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 ASO IDP= --272A (PW≤10μs) ID= --68A 10 1m s 10 ms 10 0m DC s op era tio n 10 μs 0μ s Operation in this area is limited by RDS(on). --0.1 --0.1 Tc=25°C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Total Gate Charge, Qg -- nC 2.5 PD -- Ta Drain-to-Source Voltage, VDS -- V 45 PD -- Tc 5 7 --100 IT16261 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 0 20 40 60 80 100 120 140 160 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 2.0 1.5 1.0 0.5 0 Ambient Temperature, Ta -- °C 120 EAS -- Ta IT16249 Case Temperature, Tc -- °C IT16250 Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16251 No. A1908-4/5 BMS3004 Note on usage : Since the BMS3004 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of January, 2011. Specifications and information herein are subject to change without notice. PS No. A1908-5/5
BMS3004
1. 物料型号: - 型号:BMS3004 - 制造商:SANYO Semiconductors

2. 器件简介: - BMS3004是一种P沟道硅MOSFET,适用于通用开关设备应用。

3. 引脚分配: - 0.71:栅极(Gate) - 2:漏极(Drain) - 3:源极(Source)

4. 参数特性: - RDS(on)(导通电阻)典型值为6.5毫欧 - 输入电容Ciss典型值为13400皮法 - 4V驱动

5. 功能详解: - 绝对最大额定值:包括漏源电压(-75V)、栅源电压(+20V)、漏极电流(DC -68A,脉冲 -272A)、允许功耗(2.0W,Tc=25°C时为40W)、沟道温度(150°C)、存储温度(-55至+150°C)、雪崩能量(380mJ)、雪崩电流(-54A)等。 - 电气特性:包括漏源击穿电压、零栅源电压漏极电流、栅源漏电流、截止电压、正向传输导纳、静态漏源导通电阻、输入电容、输出电容、反向传输电容、开启延迟时间、上升时间、关闭延迟时间、下降时间、总栅极电荷、栅源电荷、栅漏“米勒”电荷、二极管正向电压、反向恢复时间、反向恢复电荷等。

6. 应用信息: - BMS3004是MOSFET产品,应避免在高电荷物体附近使用。 - 产品适用于通用电子设备(如家电、音视频设备、通信设备、办公设备、工业设备等),不适用于特殊应用(如医疗设备、航空仪器、核控制设备、燃烧设备、交通工具、交通信号系统、安全设备等)。 - 设计设备时应采取安全措施,以防因产品超出额定值而导致设备故障。

7. 封装信息: - 封装:TO-220ML(LS),符合JEITA、JEDEC标准。 - 最小包装数量:100 pcs./bag 或 50pcs./magazine。 - 其他封装:SC-67, SOT-186A。
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