CPH3116

Ordering number : EN6405E CPH3116 / CPH3216 SANYO Semiconductors DATA SHEET CPH3116 / CPH3216 Applications • PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation. ( ) : CPH3116 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings (--50)80 (--50)80 (--)50 (--)5 (--)1.0 (--)3 (--)200 0.9 150 --55 to +150 Unit V V V V A A mA W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)100mA Ratings min typ max (--)0.1 (--)0.1 200 560 Unit µA µA Marking : CPH3116 : AR, CPH3216 : CR Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 81006EA MS IM / 62504 TS IM TB-00000308 / 83100 TS (KOTO) / 21000 TS (KOTO) TA-2706 No.6405-1/5 CPH3116 / CPH3216 Continued from preceding page. Parameter Gain-Bandwideth Product Output Capacitance Symbol fT Cob VCE(sat)1 Collector-to-Emitter Saturation Voltage VCE(sat)2 Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf IC=(--)300mA, IB=(--)6mA IC=(--)500mA, IB=(--)10mA IC=(--)10µA, IE=0 IC=(--)100µA, RBE=0 IC=(--)1mA, RBE=∞ IE=(-)10µA, IC=0 See specified test circuit. See specified test circuit. See specified test circuit. (-50) 80 (-50) 80 (-)50 (--)5 35 (170) 330 (30)40 Conditions VCE=(--)10V, IC=(--)300mA VCB=(--)10V, f=1MHz IC=(--)500mA, IB=(--)10mA Ratings min typ 420 (9)6 (--280) 130 (--145) 90 (--)0.81 (--430) 190 (--220) 135 (--)1.2 max Unit MHz pF mV mV mV mV V V V V V V V ns ns ns ns Package Dimensions unit : mm (typ) 7015A-003 2.9 0.15 Switching Time Test Circuit 0.6 PW=20µs DC≤1% INPUT IB1 IB2 (For PNP, the polarity is reversed.) OUTPUT 3 0.2 2.8 1.6 0.05 50Ω VR RB + 100µF + 470µF RL 0.6 1 0.95 2 0.4 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 0.9 0.2 VBE= --5V VCC=25V 20IB1= --20IB2=IC=500mA --1000 IC -- VCE CPH3116 --5 0 mA 0 --4 mA --30 mA 1000 IC -- VCE 40mA 30mA 20mA m --20 A 800 10mA 8mA --800 Collector Current, IC -- A Collector Current, IC -- A A --10m --8mA --6mA 50mA 6mA 4mA --600 --4mA --2mA 600 --400 400 2mA --200 200 0 0 --0.2 --0.4 --0.6 --0.8 IB=0mA --1.0 IT01643 0 0 CPH3216 0.2 0.4 0.6 0.8 IB=0mA 1.0 IT01644 Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V No.6405-2/5 CPH3116 / CPH3216 --1.0 --0.9 IC -- VBE CPH3116 VCE= --2V Collector Current, IC -- A 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 --1.0 --1.2 IT01645 1000 0 0.2 0.4 IC -- VBE CPH3216 VCE=2V Collector Current, IC -- A --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 0 --0.2 --0.4 --0.6 --0.8 Ta=7 5°C 25°C --25°C Ta=7 5° 0.6 C 25°C --25°C 0.8 1.0 1.2 IT01646 Base-to-Emitter Voltage, VBE -- V 1000 7 5 Base-to-Emitter Voltage, VBE -- V hFE -- IC hFE -- IC Ta=75°C CPH3216 VCE=2V CPH3116 VCE= --2V 7 5 Ta=75°C DC Current Gain, hFE DC Current Gain, hFE 3 2 3 2 --25°C --25°C 25°C 25°C 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 3 IT01647 5 Collector Current, IC -- A IT01648 f T -- IC Gain-Bandwidth Product, f T -- MHz CPH3116 VCE= --10V f T -- IC 3 2 1000 7 5 3 2 100 7 5 3 Gain-Bandwidth Product, f T -- MHz 2 CPH3216 VCE=10V 1000 7 5 3 2 100 7 5 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 100 7 IT01649 100 7 Cob -- VCB Collector Current, IC -- A IT01650 Cob -- VCB CPH3116 f=1MHz Output Capacitance, Cob -- pF CPH3216 f=1MHz Output Capacitance, Cob -- pF 5 3 2 5 3 2 10 7 5 3 2 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT01651 10 7 5 3 2 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT01652 Collector-to-Base Voltage, VCB -- V Collector-to-Base Voltage, VCB -- V No.6405-3/5 CPH3116 / CPH3216 --1.0 7 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 1.0 VCE(sat) -- IC CPH3216 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 CPH3116 IC / IB=20 7 5 3 2 --0.1 7 5 3 2 0.1 7 5 3 2 C 75° Ta= --25° C C 25° 7 Ta= 5°C --25° 2 3 5 C 7 0.1 °C 25 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A --1.0 7 --1.0 IT01653 7 0.01 0.01 2 3 5 VCE(sat) -- IC Collector Current, IC -- A 1.0 7 7 1.0 IT01654 VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V CPH3116 IC / IB=50 5 3 2 CPH3216 IC / IB=50 --0.1 7 5 3 2 7 Ta= --25° C 5°C 0.1 7 5 3 2 25° C 7 Ta= 5°C C --25° 25° C --0.01 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A --10 7 --1.0 IT01655 7 0.01 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 10 7 1.0 IT01656 VBE(sat) -- IC VBE(sat) -- IC CPH3216 IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 CPH3116 IC / IB=50 7 5 3 2 --1.0 7 5 3 2 Ta= --25°C 75°C 25°C 1.0 7 5 3 2 Ta= --25°C 75°C 25°C --0.1 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.1 --1.0 IT01657 7 0.1 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 1.4 7 1.0 IT01658 ASO PC -- Ta CPH3116 / CPH3216 Collector Dissipation, PC -- W CPH3116 / CPH3216 ICP=3A 1.2 Collector Current, IC -- A 10 IC=1A 1m 1.0 0.9 0.8 s 0µ µs 0 50 s Mo 10 un DC 10 m ted s on op 0m ac er s 0.6 era mi ati cb on oa rd 0.4 (60 Ta=25°C Single pulse Mounted on a ceramic board (600mm2!0.8mm) For PNP, minus sign is omitted. 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 0m 0.2 0 0 20 40 60 80 100 m2 !0 .8m m) 160 120 140 Collector-to-Emitter Voltage, VCE -- V IT01659 Ambient Temperature, Ta -- °C IT01660 No.6405-4/5 CPH3116 / CPH3216 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice. PS No.6405-5/5