CPH3146

Ordering number : ENA0538 CPH3146 SANYO Semiconductors DATA SHEET CPH3146 Applications • PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications DC / DC converter, Relay drivers, lamp drivers, motor drivers. Features • • • • • • Adoption of FBET, MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings -60 -60 -60 --7 --3 --5 --600 0.9 150 --55 to +150 Unit V V V V A A mA W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=-50V, IE=0A VEB=-4V, IC=0A VCE=-2V, IC=--100mA VCE=-10V, IC=--500mA VCB=-10V, f=1MHz Ratings min typ max --1 --1 200 400 25 400 MHz pF Unit µA µA Marking : BM Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0806EA SY IM TC-00000303 No. A0538-1/4 CPH3146 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=--1A, IB=--50mA IC=--1A, IB=--100mA IC=--1A, IB=--100mA IC=--10µA, IE=0A IC=--100µA, RBE=0Ω IC=--1mA, RBE=∞ IE=--10µA, IC=0A See specified test circuit. See specified test circuit. See specified test circuit. --60 --60 --60 --7 35 480 28 Ratings min typ --100 -80 --0.85 max --200 --160 --1.2 Unit mV mV V V V V V ns ns ns Package Dimensions unit : mm (typ) 7015A-003 Switching Time Test Circuit PW=20µs D.C.≤1% 2.9 0.15 IB1 IB2 1kΩ OUTPUT 0.6 INPUT 3 0.2 VR 50Ω RL + 220µF + 470µF VCC= --30V 2.8 1.6 0.05 0.6 1 0.95 2 0.4 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 VBE=5V 0.2 IC= --10IB1=10IB2=IC= --0.5A 0.9 --3.0 IC -- VCE 0m A 5 --1 0 mA --3.0 IC -- VBE VCE= --2V --100 mA --2.5 --2.5 --2 0 Collector Current, IC -- A 0m --2.0 --50mA --20mA Collector Current, IC -- A A --2.0 --2 5 Ta=75° C 0 --0.2 --0.4 --0.6 --1.5 --1.5 --1.0 --5mA --1.0 --0.5 --0.5 0 0 --0.1 --0.2 --0.3 IB=0mA --0.4 --0.5 IT11573 0 --0.8 --1.0 IT11574 Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V 25°C --25°C No. A0538-2/4 CPH3146 1000 7 5 hFE -- IC VCE= --2V Gain-Bandwidth Product, fT -- MHz 1000 7 5 fT -- IC VCE= --10V DC Current Gain, hFE Ta=75°C 3 2 25°C --25°C 3 2 100 7 5 --0.01 100 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A 2 IT11575 5 Collector Current, IC -- A IT11576 Cob -- VCB f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V VCE(sat) -- IC IC / IB=10 3 2 Output Capacitance, Cob -- pF 100 7 5 --0.1 7 5 3 2 3 2 7 Ta= 5°C 5°C --2 25 7 5 °C --0.01 10 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT11577 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector-to-Base Voltage, VCB -- V 7 5 VCE(sat) -- IC Collector Current, IC -- A 3 IT11578 VBE(sat) -- IC IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 --0.1 7 5 --1.0 Ta 3 2 =7 5°C 5 --2 °C Ta= --25°C 75°C 25°C 7 25° C 5 --0.01 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A --10 7 5 3 2 IT11579 ASO Collector Current, IC -- A 1.0 0.9 IT11580 ICP= --5A IC= --3A 1m s