CPH3247

Ordering number : ENA0400 CPH3247 SANYO Semiconductors DATA SHEET CPH3247 Applications • NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications DC / DC converters, relay drivers, lamp drivers, motor drivers, inverters. Features • • • • • • Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm). High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings 120 120 80 6.5 2.5 4 500 0.9 150 --55 to +150 Unit V V V V A A mA W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=70V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA VCE=10V, IC=500mA VCB=10V, f=1MHz 300 350 14 Conditions Ratings min typ max 1 1 600 MHz pF Unit µA µA Marking : DS Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82306 / 60506EA MS IM TB-00002342 No. A0400-1/4 CPH3247 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=1A, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA IC=10µA, IE=0A IC=100µA, RBE=0Ω IC=1mA, RBE=∞ IE=10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 120 120 80 6.5 40 920 32 Ratings min typ 90 80 0.84 max 135 120 1.2 Unit mV mV V V V V V ns ns ns Package Dimensions unit : mm 7015A-003 2.9 0.15 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR10 IB1 OUTPUT IB2 RB 0.6 3 0.2 RL 2.8 1.6 0.05 50Ω + 100µF + 470µF VCC=40V 0.6 1 0.95 2 0.4 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 VBE= --5V 0.2 10IB1= --10IB2=IC=0.5A 0.9 2.0 IC -- VCE 80mA 2.0 1.8 IC -- VBE VCE=5V 60m A Collector Current, IC -- A Collector Current, IC -- A 1.6 100m A 20mA 1.6 1.4 1.2 1.0 1.2 10mA 5mA Ta=75°C 0.8 0.8 0.6 0.4 0.2 2mA 0.4 1mA 0 0 IB=0mA 0.2 0.4 0.6 0.8 1.0 IT11004 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V --25°C IT11005 25°C No. A0400-2/4 CPH3247 1000 7 5 hFE -- IC VCE=5V 3 2 VCE(sat) -- IC IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Ta=75°C 25°C --25°C 0.1 7 5 3 2 DC Current Gain, hFE 3 2 = Ta 75 °C 5 --2 °C 25 °C 100 7 5 0.01 0.01 7 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A 5 3 2 IT11006 3 VCE(sat) -- IC Collector Current, IC -- A IT11007 VBE(sat) -- IC IC / IB=20 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 0.1 7 5 3 2 25 = Ta °C 75 °C 1.0 Ta= --25°C 75°C 25°C --2 C 5° 7 5 0.01 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A 7 IT11008 7 fT -- IC VCE=10V Collector Current, IC -- A IT11009 Cob -- VCB f=1MHz 5 Gain-Bandwidth Product, fT -- MHz 5 3 2 Output Capacitance, Cob -- pF 3 2 100 7 5 10 7 5 3 2 0.01 3 0.1 2 3 5 7 0.1 2 3 5 7 1.0 2 3 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- A 10 7 5 3 2 IT11010 1.0 0.9 Collector-to-Base Voltage, VCB -- V 5 7 100 IT11011 ASO ICP=4A IC=2.5A DC PC -- Ta