CPH3314

Ordering number : ENN6909 CPH3314 P-Channel Silicon MOSFET CPH3314 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2152A [CPH3314] 2.9 0.4 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.6 3 0.05 1 1.9 2 0.6 1.6 2.8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Ratings -30 ± 20 --1.6 --6.4 1 150 --55 to +150 Unit V V A A W °C °C Mounted on a ceramic board (900mm2!0.8mm) Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=--1mA, VGS=0 VDS=-30V, VGS=0 VGS=± 16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--0.8A ID=--0.8A, VGS=-10V ID=--0.4A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz Ratings min --30 --1 ± 10 -1.2 1.0 1.5 210 360 185 30 20 270 500 --2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : JP 0.2 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11801 TS IM TA-3064 No.6909-1/4 0.2 0.15 CPH3314 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=-10V, ID=-1.6A VDS=--10V, VGS=-10V, ID=-1.6A VDS=--10V, VGS=-10V, ID=-1.6A IS=--1.6A, VGS=0 Ratings min typ 7 4 22 8 4.7 0.8 0.7 --0.9 --1.5 max Unit ns ns ns ns nC nC nC V Switching Time Test Circuit VDD= --15V VIN 0V --10V VIN PW=10µs D.C.≤1% ID= --0.8A RL=18.7Ω D VOUT G P.G 50Ω CPH3314 S --2.0 --1.8 --1.6 ID -- VDS --6 --5 V V --8 V --2.0 --1.8 --1.6 ID -- VGS VDS= --10V --4 V Drain Current, ID -- A Drain Current, ID -- A --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1 0 --1.4 V --1.4 --1.2 --1.0 --0.8 V GS= --3V 5°C --0.2 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --25 --3.0 °C --0.4 Ta= 7 25° --3.5 C --0.6 --4.0 Drain-to-Source Voltage, VDS -- V 800 IT02665 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 600 IT02666 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 700 600 500 400 300 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 500 400 ID= --0.4A --0.8A -I D= 300 , VG 0.4A --4 S= V 0.8A, I D= -200 --10 V GS= V 100 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT02667 Ambient Temperature, Ta -- °C IT02668 No.6909-2/4 CPH3314 3 yfs -- ID VDS= --10V Forward Transfer Admittance, yfs -- S 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IF -- VSD VGS=0 1.0 7 5 = Ta --2 5° C 25 °C 3 2 75 °C Forward Current, IF -- A 0.1 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Drain Current, ID -- A 100 7 IT02669 1000 SW Time -- ID VDD= --15V VGS= --10V Ciss, Coss, Crss -- pF Diode Forward Voltage, VSD -- V 7 5 3 2 Ta=75 °C 25°C --25°C IT02670 Ciss, Coss, Crss -- VDS f=1MHz Switching Time, SW Time -- ns 5 3 2 td(off) Ciss 10 7 5 td(on) tr tf 100 7 5 3 2 3 2 Coss Crss 0 --5 --10 --15 --20 --25 --30 IT02671 1.0 3 5 7 --0.1 2 3 5 7 --1.0 2 3 10 Drain Current, ID -- A --10 IT02672 --10 7 5 3 2 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --1.6A --8 IDP= --6.4A