CPH3318

Ordering number : ENN7122 CPH3318 P-Channel Silicon MOSFET CPH3318 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2152A [CPH3318] 0.4 3 0.6 0.2 0.05 1.6 2.8 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 1.9 2 0.6 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions 0.2 Ratings --30 ±20 --1 --4 0.9 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=-1mA, VGS=0 VDS=--30V, VGS=0 VGS=±16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--500mA ID=-500mA, VGS=-10V ID=-300mA, VGS=-4V Ratings min --30 --1 ±10 --1.2 0.57 0.82 420 720 550 1000 --2.6 typ max Unit V µA µA V S mΩ mΩ Marking : JT Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1501 TS IM TA-3355 No.7122-1/4 CPH3318 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=--10V, ID=-1A VDS=--10V, VGS=--10V, ID=-1A VDS=--10V, VGS=--10V, ID=-1A IS=--1A, VGS=0 Ratings min typ 75 16 9 6 4 12 4 2.6 0.5 0.5 --0.89 --1.5 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 0V --10V VIN PW=10µs D.C.≤1% ID= --500mA RL=30Ω VDD= --15V D VOUT G CPH3318 P.G 50Ω S --2.0 ID -- VDS --1 0 --1.4 ID -- VGS VDS= --10V -- 6V V Drain Current, ID -- A Drain Current, ID -- A --1.5 --8V V --5 --1.2 --4V --1.0 --0.8 --1.0 --0.6 --0.5 --0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 25° --3.0 5°C C --25°C VGS= --3V --0.4 Ta= 7 --3.5 --4.0 Drain-to-Source Voltage, VDS -- V 1400 IT03310 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 1200 IT03311 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1200 1000 1000 ID= --0.3A --0.5A 800 --0 I D= . = --4 , VGS 3A V 800 600 600 400 0.5 I D= -- = --10 A, V GS V 400 200 0 --1 200 --2 --3 --4 --5 --6 --7 --8 --9 --10 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT03312 Ambient Temperature, Ta -- °C IT03313 No.7122-2/4 CPH3318 3 yfs -- ID VDS= --10V 5 3 2 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 2 Forward Current, IF -- A 1.0 7 5 °C 25 °C -25 =Ta °C 75 --1.0 7 5 3 2 --0.1 7 5 3 2 3 2 0.1 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Drain Current, ID -- A 100 7 IT03314 100 7 5 SW Time -- ID Ciss, Coss, Crss -- VDS Ciss f=1MHz Diode Forward Voltage, VSD -- V Ta=75° C 25°C --25°C IT03315 VDD= --15V VGS= --10V Switching Time, SW Time -- ns 5 2 td(off) 10 7 5 3 2 Ciss, Coss, Crss -- pF 3 3 2 td(on) tf Coss 10 7 tr Crss 1.0 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 0 --5 --10 --15 --20 --25 --30 IT03317 Drain Current, ID -- A --10 IT03316 --10 7 5 3 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --1.0A --8 IDP= --4A Drain Current, ID -- A 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --1A 10