CPH3331

Ordering number : ENN8160 CPH3331 P-Channel Silicon MOSFET CPH3331 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --200 ±20 --0.4 --1.6 1.0 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0 VDS=-200V, VGS=0 VGS=±16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--200mA ID=--200mA, VGS=--10V ID=--200mA, VGS=--4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --200 --10 ±10 --1.2 0.54 0.9 3.8 4 350 17 11 10 4 43 42 5.0 5.6 --2.6 typ max Unit V µA µA V S Ω Ω pF pF pF ns ns ns ns Marking : YG Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1004PE TS IM TB-00000385 No.8160-1/4 CPH3331 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--100V, VGS=--10V, ID=--400mA VDS=--100V, VGS=--10V, ID=--400mA VDS=--100V, VGS=--10V, ID=--400mA IS=--400mA, VGS=0 Ratings min typ 7.0 1.0 0.8 --0.79 --1.2 max Unit nC nC nC V Package Dimensions unit : mm 2152A 2.9 0.4 3 0.6 Switching Time Test Circuit VIN 0.2 VDD= --100V 0.15 0V --10V VIN ID= --200mA RL=500Ω 0.05 1.6 2.8 PW=10µs D.C.≤1% D VOUT 0.6 1 1.9 2 G 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 0.2 CPH3331 P.G 50Ω S --0.4 ID -- VDS V --4 .0V --0.4 ID -- VGS VDS= --10V --3 .0V Drain Current, ID -- A V --6.0 --0.2 Drain Current, ID -- A --0.3 --0.3 --1 0 --0.2 --0.1 --0.1 25°C 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 IT08710 10 0 0 --0.5 --1.0 --1.5 --2.0 Ta=75 ° C --2.5 VGS= --2.5V --25° C --3.0 --3.5 Drain-to-Source Voltage, VDS -- V 10 9 8 7 6 5 4 3 2 0 --2 --4 --6 --8 --10 --12 --14 --16 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT08711 Ta=25°C ID= --200mA RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 8 6 4 -4V =V GS -10V A, =00m V GS --2 = A, ID 00m --2 = ID 2 --18 --20 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT08712 Ambient Temperature, Ta -- °C IT08713 No.8160-2/4 CPH3331 5 yfs -- ID VDS= --10V Forward Transfer Admittance, yfs -- S 3 2 5 3 2 --1.0 7 5 3 2 IF -- VSD VGS=0 1.0 7 5 3 2 25° C 3 2 0.1 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 IT08714 --0.01 7 5 3 2 --0.001 --0.3 --0.4 --0.5 Ta = Ta= C 75° --0.1 7 5 25° --0.7 --0.6 --25 --0.8 --0.9 75 -- C 25° Forward Current, IF -- A °C °C C --1.0 --1.1 Drain Current, ID -- A 1000 7 5 SW Time -- ID VDD= --100V VGS= --10V 7 5 3 Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V IT08715 Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0 2 3 5 7 --0.1 2 3 5 7 --10 IT08716 tf td(off) Ciss, Coss, Crss -- pF 2 100 7 5 3 2 td(on) Coss tr 10 7 5 0 --5 --10 Crss --15 --20 --25 --30 IT08717 Drain Current, ID -- A --10 Drain-to-Source Voltage, VDS -- V 3 2 --1.0 7 5 VGS -- Qg ASO Gate-to-Source Voltage, VGS -- V VDS= --100V ID= --400mA IDP= --1.6A ID= --0.4A 10 --8