CPH3350

Ordering number : ENA0151 CPH3350 SANYO Semiconductors DATA SHEET CPH3350 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Ultrahigh-speed switching 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --20 ±10 -3 --12 1.0 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7015A-004 Product & Package Information • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel 2.9 0.6 3 0.15 Packing Type: TL 0.2 Marking WG TL 2.8 1.6 0.05 0.6 1 0.95 2 0.4 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Electrical Connection 3 0.9 0.2 1 2 http://semicon.sanyo.com/en/network D1411PE TKIM TC-00002683 No. A0151-1/4 LOT No. CPH3350 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=--3A, VGS=0V VDS=--10V, VGS=--4.5V, ID=--3A See specified Test Circuit. VDS=--10V, f=1MHz Conditions ID=- 1mA, VGS=0V VDS=- 20V, VGS=0V VGS=±8V, VDS=0V VDS=- 10V, ID=- 1mA VDS=- 10V, ID=- 1.5A ID=- 1.5A, VGS=- 4.5V ID=- 1A, VGS=- 2.5V ID=- 0.2A, VGS=- 1.8V Ratings min --20 -1 ±10 --0.4 4.3 64 89 131 375 77 58 8.1 26 42 37 4.6 0.8 1.3 --0.83 --1.2 83 124 196 --1.3 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 0V --4.5V VIN VDD= --10V ID= --1.5A RL=6.67Ω D VOUT VIN PW=10μs D.C.≤1% G CPH3350 P.G 50Ω S --3.0 ID -- VDS V --4.5V --5 ID -- VGS VDS= --10V --2. 5 --2.5 --1 . 8V --4 Drain Current, ID -- A V --2.0 Drain Current, ID -- A --8.0V --3. 0 --3 --1.5 --1.5V Ta=7 5°C 0 --0.5 --1.0 --2 --1.0 0 VGS= --1.0V 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 25°C --1.5 --0.5 --1 --25° C --2.0 --2.5 IT13009 Drain-to-Source Voltage, VDS -- V IT13008 Gate-to-Source Voltage, VGS -- V No. A0151-2/4 CPH3350 300 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 200 200 150 150 ID= --0.2A --1.0A --1.5A 100 100 --0.2A , I D= --1.8V = VGS 1.0A I = -2.5V, D -V GS= --1.5A ,I = --4.5V D V GS= 50 50 0 0 --1 --2 --3 --4 --5 --6 --7 --8 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 | yfs | -- ID IT13010 --10 7 5 3 2 Ambient Temperature, Ta -- °C IS -- VSD IT13011 Forward Transfer Admittance, | yfs | -- S 7 5 VDS= --10V VGS=0V 2 = Ta 1.0 7 5 3 2 0.1 --0.01 -- °C 25 75 °C 25 °C Source Current, IS -- A 3 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 0 --0.2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 2 5 7 --10 IT13012 --0.001 Ta=7 5°C 25°C --25° C --0.4 --0.6 --0.8 --1.0 --1.2 IT13013 SW Time -- ID VDD= --10V VGS= --4V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V f=1MHz Ciss Switching Time, SW Time -- ns 100 7 5 td (off) tf 3 2 100 7 5 tr 10 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Coss Crss td(on) 3 2 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Drain Current, ID -- A --4.5 --4.0 --3.5 VGS -- Qg IT13014 --100 7 5 3 2 Drain-to-Source Voltage, VDS -- V ASO IT13015 Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --3A IDP= --12A (PW≤10μs) Drain Current, ID -- A --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 IT13016 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --3A 10 10 DC op era 100 μs 1m ms s 0m s Operation in this area is limited by RDS(on). tio n --0.01 --0.1 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 5 7 --100 IT16676 No. A0151-3/4 CPH3350 1.2 PD -- Ta When mounted on ceramic substrate (900mm2×0.8mm) Allowable Power Dissipation, PD -- W 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT13018 Note on usage : Since the CPH3350 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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