CPH3356

Ordering number : ENA1124 CPH3356 SANYO Semiconductors DATA SHEET CPH3356 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --20 ±10 --2.5 --10 1.0 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7015A-004 Product & Package Information • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel 2.9 0.6 3 0.15 Packing Type: TL 0.2 Marking WN TL 2.8 1.6 0.05 0.6 1 0.95 2 0.4 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Electrical Connection 3 0.9 0.2 1 2 http://semicon.sanyo.com/en/network N3011PE TKIM TC-00002675 No. A1124-1/4 LOT No. CPH3356 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=--2.5A, VGS=0V VDS=--10V, VGS=--4.5V, ID=--2.5A See specified Test Circuit. VDS=--10V, f=1MHz Conditions ID=- 1mA, VGS=0V VDS=- 20V, VGS=0V VGS=±8V, VDS=0V VDS=- 10V, ID=- 1mA VDS=- 10V, ID=- 1A ID=- 1A, VGS=- 4.5V ID=- 0.5A, VGS=- 2.5V ID=- 0.1A, VGS=- 1.8V Ratings min --20 -1 ±10 --0.4 2.7 105 145 215 250 60 45 5.7 11 34 20 3.3 0.65 0.72 --0.87 --1.5 137 203 323 --1.4 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 0V --4.5V VIN VDD= --10V ID= --1A RL=10Ω D VOUT VIN PW=10μs D.C.≤1% G CPH3356 P.G 50Ω S --2.0 ID -- VDS --2.5 V --4.5V --3.0 ID -- VGS VDS= --10V --1.8 --1.6 --1. 8V --2.5 V Drain Current, ID -- A --3. 5 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.1 Drain Current, ID -- A --8.0V --2.0 VGS= --1.5V --1.5 --1.0 --0.5 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.5 --1.0 25 --1.5 °C 5°C --25 °C Ta= 7 --2.0 IT14878 Drain-to-Source Voltage, VDS -- V IT14877 Gate-to-Source Voltage, VGS -- V No. A1124-2/4 CPH3356 700 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 300 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 600 500 250 ID= --0.1A 400 200 = VGS = --0 V, I D --1.8 .1A --0.5A 300 200 100 0 150 --1.0A 100 --0.5A , I D= --2.5V = VGS .0A I = --1 --4.5V, D V GS= 50 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 7 | yfs | -- ID IT14879 5 3 2 Ambient Temperature, Ta -- °C IS -- VSD IT14880 Forward Transfer Admittance, | yfs | -- S 5 3 2 VDS= --10V VGS=0V 1.0 7 5 3 2 = Ta --2 C 5° °C 75 Source Current, IS -- A --1.0 7 5 3 5°C 0 --0.2 --0.4 --0.1 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 --0.01 Ta= 7 °C 25 --0.6 25°C --25° C --0.8 2 --1.0 --1.2 IT14882 Drain Current, ID -- A 7 5 IT14881 1000 7 5 SW Time -- ID td(off) Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V VDD= --10V VGS= --4.5V Ciss, Coss, Crss -- pF f=1MHz Switching Time, SW Time -- ns 3 2 3 2 Ciss tf 100 7 5 3 2 10 10 7 5 3 2 --0.1 2 3 5 tr Coss Crss td(on) 7 --1.0 2 3 5 IT14883 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Drain Current, ID -- A --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VGS -- Qg Drain-to-Source Voltage, VDS -- V --100 7 5 3 2 ASO IT14884 Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --2.5A Drain Current, ID -- A --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 10 1m 0μs ID= --2.5A 10 s ms 10 0m DC s op er ati on Operation in this area is limited by RDS(on). IDP= --10A (PW≤10μs) 3.5 IT16663 --0.01 --0.01 2 3 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 5 7--0.1 2 3 5 7--1.0 23 5 7 --10 23 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 57 --100 IT16664 No. A1124-3/4 CPH3356 1.2 PD -- Ta When mounted on ceramic substrate (900mm2×0.8mm) Allowable Power Dissipation, PD -- W 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16665 Note on usage : Since the CPH3356 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2011. Specifications and information herein are subject to change without notice. PS No. A1124-4/4