CPH3360

Ordering number : ENA0114 CPH3360 SANYO Semiconductors DATA SHEET CPH3360 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=233mΩ(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --30 ±20 --1.6 --6.4 0.9 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7015A-004 Product & Package Information • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel 2.9 0.6 3 0.15 Packing Type: TL 0.2 Marking WS TL 2.8 1.6 0.05 0.6 1 0.95 2 0.4 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Electrical Connection 3 0.9 0.2 1 2 http://semicon.sanyo.com/en/network N0211PE TKIM TC-00002659 No. A0114-1/4 LOT No. CPH3360 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=--1.6A, VGS=0V VDS=--15V, VGS=--10V, ID=--1.6A VDS=--10V, f=1MHz Conditions ID=- 1mA, VGS=0V VDS=- 30V, VGS=0V VGS=±16V, VDS=0V VDS=- 10V, ID=- 1mA VDS=- 10V, ID=- 0.8A ID=- 0.8A, VGS=- 10V ID=- 0.4A, VGS=- 4.5V ID=- 0.4A, VGS=- 4V Ratings min --30 -1 ±10 --1.2 1.3 233 380 441 82 22 16 4.0 See specified Test Circuit. 3.3 12 5.4 2.2 0.36 0.49 --0.9 --1.5 303 532 617 --2.6 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 0V --10V VIN VIN PW=10μs D.C.≤1% G D VDD= --15V ID= --0.8A RL=18.75Ω VOUT P.G 50Ω CPH3360 S --1.6 ID -- VDS 0V --8. 0 5V .0V Ta=25°C --2.0 --1.8 --1.6 ID -- VGS VDS= --10V V --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 --6 . --4 . Drain Current, ID -- A .0V --4 Drain Current, ID -- A --1.4 --1.2 --1.0 --0.8 --10 V --3.5 --3.0V VGS= --2.5V 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --0.4 --0.2 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 25 --3.0 75 °C °C --25 °C --3.5 --0.6 Ta = --4.0 Drain-to-Source Voltage, VDS -- V IT16626 Gate-to-Source Voltage, VGS -- V IT16627 No. A0114-2/4 CPH3360 1000 RDS(on) -- VGS Ta=25°C ID= --0.4A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1000 900 800 700 600 500 400 300 200 100 0 --60 --40 --20 0 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 900 800 700 600 500 400 300 200 100 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --0.8A A --0.4 , I D= 4.0V = -VGS .4A = --0 V, I D --4.5 = VGS = --0.8A 10.0V, I D V GS= -20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 | yfs | -- ID IT16628 --10 7 5 3 2 Ambient Temperature, Ta -- °C IS -- VSD IT16629 Forward Transfer Admittance, | yfs | -- S 7 5 VDS= --10V VGS=0V 2 1.0 7 5 3 2 0.1 --0.01 Ta=7 5°C 0 --0.2 --0.4 --0.6 25 °C --0.01 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 100 7 5 7 --10 IT16630 --0.001 25°C --25°C --0.8 = Ta C 5° --2 Source Current, IS -- A 3 --1.0 7 5 3 2 --0.1 7 5 3 2 C 75° --1.0 --1.2 IT16631 SW Time -- ID Switching Time, SW Time -- ns 5 3 2 VDD= --15V VGS= --10V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V f=1MHz td(off) 10 7 5 3 2 1.0 --0.01 100 7 5 3 2 10 Ciss td(on) tr tf Coss Crss 0 --5 --10 --15 --20 --25 --30 IT16633 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT16632 Drain Current, ID -- A --10 --9 VGS -- Qg Drain-to-Source Voltage, VDS -- V --10 7 5 3 2 ASO Gate-to-Source Voltage, VGS -- V VDS= --15V ID= --1.6A Drain Current, ID -- A IDP= --6.4A (PW≤10μs) 10 10 --8 --7 --6 --5 --4 --3 --2 --1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT16634 ID= --1.6A 1m ms 0μ s s --1.0 7 5 3 2 --0.1 7 5 3 2 10 DC op er 0m s Operation in this area is limited by RDS(on). ati on --0.01 --0.1 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 5 7 --100 IT16635 No. A0114-3/4 CPH3360 1.0 PD -- Ta When mounted on ceramic substrate (900mm2×0.8mm) Allowable Power Dissipation, PD -- W 0.9 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16636 Note on usage : Since the CPH3360 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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