CPH3430

Ordering number : ENN8175 CPH3430 N-Channel Silicon MOSFET CPH3430 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 60 ±10 2 8 1 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=1A, VGS=2.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 60 1 ±10 0.4 1.8 3.6 170 190 325 29 21 11 17 40 27 220 270 1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns Marking : ZF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11205PE TS IM TA-100257 No.8175-1/4 CPH3430 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=30V, VGS=4V, ID=2A VDS=30V, VGS=4V, ID=2A VDS=30V, VGS=4V, ID=2A IS=2A, VGS=0 Ratings min typ 4.2 1.1 1.1 0.86 1.2 max Unit nC nC nC V Package Dimensions unit : mm 2152A Switching Time Test Circuit VIN 4V 0V VDD=30V 0.4 3 0.6 0.2 2.9 0.15 VIN PW=10µs D.C.≤1% ID=1A RL=30Ω D VOUT 0.05 1.6 2.8 G 1 1.9 2 0.6 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 CPH3430 P.G 50Ω 0.2 S 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Ta= -2 Ta=2 5°C 75°C 0 0.5 1.0 1.5 3.5 1.8 5.0 3.0 V 1.6 Drain Current, ID -- A 6.0 2.0 V 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.1 V 2.5 V 1.4 VGS=1.5V Drain Current, ID -- A --25° C 75°C 2.0 V 25°C 2.5 V V VDS=10V 5°C 2.0 ID -- VDS 4.0 ID -- VGS 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 3.0 IT06813 Drain-to-Source Voltage, VDS -- V 500 IT06812 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 400 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C ID=1.0A 350 300 250 200 150 100 50 0 --60 400 300 =1 ID A, V =2 GS .5V .0V 200 =1 ID A, =4 V GS 100 0 0 2 4 6 8 10 IT06814 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C IT06815 No.8175-2/4 CPH3430 10 yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S 7 5 3 2 7 5 3 2 IF -- VSD VGS=0 °C -25 =Ta Forward Current, IF -- A 1.0 7 5 3 2 3 2 0.1 7 5 3 2 °C 75 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 0.01 0.2 0.4 Ta= 75° C 25° C --25 °C 0.6 0.8 25° C 1.0 7 5 1.0 1.2 IT06817 Drain Current, ID -- A 100 7 IT06816 1000 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V VDD=30V VGS=4V Ciss, Coss, Crss -- pF td(off) 7 5 3 2 Switching Time, SW Time -- ns 5 3 tf 2 100 7 5 3 2 tr 10 7 5 0.1 td(on) Coss Crss 10 7 2 3 5 7 1.0 2 3 5 IT06818 10 7 5 3 2 0 5 10 15 20 25 30 IT06819 Drain Current, ID -- A 4 Drain-to-Source Voltage, VDS -- V VGS -- Qg ASO Gate-to-Source Voltage, VGS -- V VDS=30V ID=2.0A Drain Current, ID -- A IDP=8A ID=2A 1m