CPH3431

Ordering number : EN8252A CPH3431 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH3431 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 200 ±20 0.6 2.4 1.0 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=200V, VGS=0V VGS=± 16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=300mA ID=300mA, VGS=10V ID=300mA, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 200 10 ± 10 1.2 0.6 1 1.8 2.0 340 16 10 10 4 35 27 2.4 2.8 2.6 typ max Unit V µA µA V S Ω Ω pF pF pF ns ns ns ns Marking : ZG Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82306 / 60506 MS IM / 31505PE TS IM TB-0000384 No.8252-1/4 CPH3431 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=100V, VGS=10V, ID=600mA VDS=100V, VGS=10V, ID=600mA VDS=100V, VGS=10V, ID=600mA IS=600mA, VGS=0V Ratings min typ 7 1 0.8 0.79 1.2 max Unit nC nC nC V Package Dimensions unit : mm 7015A-004 2.9 0.6 Switching Time Test Circuit VIN VDD=100V 0.15 10V 0V VIN 0.2 ID=300mA RL=333Ω 3 2.8 1.6 0.05 PW=10µs D.C.≤1% D VOUT 0.6 1 0.95 2 0.4 G 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 CPH3431 P.G 50Ω 0.2 S 0.9 0.6 ID -- VDS V 0.6 ID -- VGS VDS=10V 0.5 Drain Current, ID -- A .0V 8.0 V 4.0 V 3.0 V 6.0 10 0.4 Drain Current, ID -- A 5.0 V 0.4 0.3 2.5V 0.2 0.2 0.1 VGS=2.0V 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT09318 Drain-to-Source Voltage, VDS -- V 4 IT09317 5 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta=25°C ID=300mA 4 3 3 2 2 30 I D= 0m VG A, A, 1 30 I D= 1 0m 4V S= V =10 V GS 0 0 5 10 15 IT09319 0 --60 --40 --20 0 20 40 60 80 100 25°C --25°C 120 140 Ta=75°C 160 Gate-to-Source Voltage, VGS -- V Ambient Temperature, Tc -- °C IT09320 No.8252-2/4 CPH3431 5 yfs -- ID VDS=10V 1.0 7 5 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 3 2 Source Current, IS -- A 3 2 7 5 3 2 0.1 7 5 3 2 °C -25 °C =75 Ta °C 25 0.1 0.01 2 3 5 7 0.1 2 3 5 Drain Current, ID -- A 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.001 2 3 5 7 0.01 2 1.0 IT11179 7 0.01 0.3 0.5 Ta= 75°C 0.7 --25° C 25°C 1.0 0.9 1.1 IT09322 SW Time -- ID 1000 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=100V VGS=10V Ciss, Coss, Crss -- pF 7 5 Switching Time, SW Time -- ns Ciss 3 2 100 7 5 3 2 10 7 5 3 3 5 7 0.1 2 3 5 7 1.0 IT09323 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 1 2 3 4 5 6 7 IT09325 0 50 100 150 200 IT09324 tf td (o ff) td(on) tr Coss Crss Drain Current, ID -- A 10 9 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS=100V ID=600mA Drain Current, ID -- A IDP=2.4A