CPH3437

Ordering number : ENN8161 CPH3437 N-Channel Silicon MOSFET CPH3437 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 20 ±10 4.5 18 1.0 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2.5A ID=2A, VGS=4.5V ID=2A, VGS=4V ID=1A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 20 1 ±10 0.4 4 6.8 28 29 39 755 155 135 17 100 68 85 39 40 55 1.4 typ max Unit V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns Marking : ZM Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1504PE TS IM TB-00000786 No.8161-1/4 CPH3437 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=4V, ID=4.5A VDS=10V, VGS=4V, ID=4.5A VDS=10V, VGS=4V, ID=4.5A IS=4.5A, VGS=0 Ratings min typ 9.9 1.35 3.5 0.84 1.2 max Unit nC nC nC V Package Dimensions unit : mm 2152A 0.4 3 0.6 0.2 Switching Time Test Circuit VIN VDD=10V ID=2.5A RL=4Ω 2.9 0.15 4V 0V VIN 0.05 1.6 2.8 PW=10µs D.C.≤1% D VOUT 0.6 1 1.9 2 G 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 0.2 P.G 50Ω CPH3437 S 0.7 0.9 4.5 ID -- VDS V 2.5V 4.5V 4.5 4.0 3.5 ID -- VGS VDS=10V 10V 6.0V 3.5 Drain Current, ID -- A V 3.0 2.0 4.0 V Drain Current, ID -- A 4.0 3.0 2.5 2.0 1.5 1.0 0.5 0 0 3.0 2.5 2.0 1.5 1.0 0.5 1.5V VGS=1.0V 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0 0 0.5 1.0 25°C --25°C 1.5 Ta= 75°C 2.0 IT08823 Drain-to-Source Voltage, VDS -- V 100 IT08822 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 70 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 90 80 60 2A 70 60 50 40 30 20 10 0 2 4 6 8 10 IT08824 ID=1A 50 40 , VG 1A I D= V 2.5 S= 30 4.0V S= A, VG I D=2 V =4.5 , VGS =2A ID 20 10 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C IT08825 No.8161-2/4 CPH3437 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 2 3 5 70.01 23 5 7 0.1 23 5 7 1.0 23 57 yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S 10 7 5 3 2 IF -- VSD VGS=0 Forward Current, IF -- A 25 °C 0.01 7 5 3 2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.001 0.2 Drain Current, ID -- A 1000 7 5 IT08826 3 2 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V Ta =7 5° C 25 °C --2 5°C = Ta --2 5° C °C 75 1.0 7 5 3 2 0.1 7 5 3 2 IT08827 VDD=10V VGS=4V Switching Time, SW Time -- ns Ciss, Coss, Crss -- pF 3 2 1000 7 5 3 2 Ciss 100 7 5 3 2 td(off) tf td(on) tr Coss 100 10 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT08828 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 1 2 3 4 5 6 7 8 9 10 7 5 0 2 4 6 8 10 Crss 12 14 16 18 20 Drain Current, ID -- A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 Drain-to-Source Voltage, VDS -- V IT08829 VGS -- Qg VDS=10V ID=4.5A ASO IDP=18A ID=4.5A