CPH3449

Ordering number : ENA0953 CPH3449 SANYO Semiconductors DATA SHEET CPH3449 Features • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) Conditions Ratings 30 ±12 1.5 6 0.9 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=800mA ID=800mA, VGS=4V ID=400mA, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.4 1.3 2.2 165 210 130 22 16 215 295 Ratings min 30 1 ±10 1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : LF Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92607PE TI IM TC-00000897 No. A0953-1/4 CPH3449 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=1.5A VDS=10V, VGS=4V, ID=1.5A VDS=10V, VGS=4V, ID=1.5A IS=1.5A, VGS=0V Ratings min typ 9 20 23 29 2.2 0.52 0.52 0.9 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7015A-004 Switching Time Test Circuit VIN 4V 0V VDD=15V 2.9 0.15 3 0.2 PW=10µs D.C.≤1% VIN ID=800mA RL=18.75Ω 0.6 D VOUT 2.8 1.6 0.05 G 0.6 1 0.95 2 0.4 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 CPH3449 P.G 50Ω 0.9 0.2 S 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 ID -- VDS 3.0V 2.0 1.8 1.6 ID -- VGS Ta= --25 25 °C °C VDS=10V 75° C 2.0 2.5 V Drain Current, ID -- A Drain Current, ID -- A 4.0V 1.5V 1.4 1.2 1.0 0.8 0.6 0.4 Ta =7 5° 25 C °C 0 0.5 1.0 VGS=1.0V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.2 0 --25 °C 1.5 2.5 IT06103 Drain-to-Source Voltage, VDS -- V 500 IT06102 500 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 400 350 300 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 450 450 400 350 300 250 200 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 800mA 250 200 150 100 50 0 0 2 4 6 8 10 IT06104 ID=400mA A 400m I= .5V, D =2 mA VGS =800 4V, I D = VGS Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C IT06105 No. A0953-2/4 CPH3449 10 ⏐yfs⏐ -- ID VDS=10V Forward Transfer Admittance, ⏐yfs⏐ -- S 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IS -- VSD VGS=0V C 25° 1.0 7 5 3 2 Ta= --2 5°C C 75° Source Current, IS -- A 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 0.01 0.2 0.3 0.4 0.5 Ta= 7 5°C 25° C --25 °C 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Drain Current, ID -- A 1000 7 5 IT06106 1000 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT06107 VDD=15V VGS=4V 7 5 Switching Time, SW Time -- ns 3 100 7 5 3 2 10 7 5 3 2 1.0 0.01 Ciss, Coss, Crss -- pF 2 3 2 Ciss 100 7 5 3 2 10 td(off) tf td(on) tr Coss Crss 5 10 15 20 25 30 IT06109 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 5 7 10 IT06108 0 Drain-to-Source Voltage, VDS -- V 2 10 7 5 VGS -- Qg ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=1.5A IDP=6A ID=1.5A PW≤10µs 10 0 1m µ s s 10 ms Drain Current, ID -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 DC Operation in this area is limited by RDS(on). 10 0m op s era tio n 2.5 IT06110 0.01 0.1 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Total Gate Charge, Qg -- nC 1.2 Drain-to-Source Voltage, VDS -- V IT12978 PD -- Ta Allowable Power Dissipation, PD -- W 1.0 0.9 0.8 M ou nte do na 0.6 ce ram ic bo ard 0.4 (9 00 mm 2 0.2 ✕0 .8m m) 140 160 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C IT12979 No. A0953-3/4 CPH3449 Note on usage : Since the CPH3449 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2007. Specifications and information herein are subject to change without notice. PS No. A0953-4/4