Ordering number : ENA1965
CPH3910
SANYO Semiconductors
DATA SHEET
CPH3910
Applications
• •
N-Channel Junctin Silicon FET
High-Frequency Low-Noise Amplifier Applications
For AM tuner RF amplification Low noise amplifier
Features
• • • •
VGDS: --25V max. | yfs |: 40mS typ. Ciss: 6.0pF typ. NF: 2.1dB typ.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 25 --25 10 50 400 150 --55 to +150 Unit V V mA mA mW °C °C
Package Dimensions
unit : mm (typ) 7015A-007
2.9 0.6 3 0.2 0.15
Product & Package Information
• Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
0.05
Marking
LOT No.
2.8
1.6
0.6
1 0.95
2 0.4
1 : Source 2 : Drain 3 : Gate SANYO : CPH3
TL
0.2
Electrical Connection
3
0.9
1
2
http://semicon.sanyo.com/en/network
21512AC TKIM TC-00002694 No. A1965-1/4
J2
CPH3910
Electrical Characteristics at Ta=25°C
Parameter Gate-to-Drain Breakdown Voltage Gate Cutoff Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Noise Figure Symbol V(BR)GDS IGSS VGS(off) IDSS | yfs | Ciss Crss NF Conditions IG=--10μA, VDS=0V VGS=--10V, VDS=0V VDS=5V, ID=100μA VDS=5V, VGS=0V VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1MHz VDS=5V, VGS=0V, f=1MHz VDS=5V, VGS=0V, f=100MHz Ratings min --25 --1.0 --0.6 20 30 40 6.0 2.3 2.1 2.8 --1.2 --1.8 40 typ max Unit V nA V mA mS pF pF dB
30
ID -- VDS
V V GS=0
Drain Current, ID -- mA
40 35 30 25 20 15
ID -- VDS
VGS=0V
25
Drain Current, ID -- mA
20
--0.2V
--0.2V
--0.4V
15
--0.4V
10
--0.6V
10
--0.6V
5
--0.8V
--0.8V --1.0V
0.5 1.0 1.5 2.0 IT16687 50 45 40 5 0
--1.0V
0 2 4 6 8 10 IT16688
0 0
Drain-to-Source Voltage, VDS -- V
50 45 40
ID -- VGS
Drain-to-Source Voltage, VDS -- V
ID -- VGS
VDS=5V
VDS=5V
Drain Current, ID -- mA
Drain Current, ID -- mA
35 30
35 30 25 20 15 10 5
--25 °C Ta=
--1.5 --1.0 --0.5
30 mA
ID S
15 10 5 0 --2.0 --1.5 --1.0 --0.5
20 mA
20
0
0.5 IT16689
0 --2.0
75
0
°C
25
S =4 0m
25
0.5 IT16690
A
Gate-to-Source Voltage, VGS -- V
100
| yfs | -- ID
Gate-to-Source Voltage, VGS -- V
100
| yfs | -- IDSS
Forward Transfer Admittance, | yfs | -- mS
7 5 3 2
Forward Transfer Admittance, | yfs | -- mS
VDS=5V f=1kHz IDSS=30mA
7
VDS=5V VGS=0V f=1kHz
5
10 7 5 3 2 1.0 1.0
3
2
2
3
5
7
10
2
3
5
Drain Current, ID -- mA
100 IT16691
7
10 10
2
3
5
7
Drain Current, IDSS -- mA
No. A1965-2/4
°C
100 IT16692
CPH3910
10 7
VGS(off) -- IDSS
VDS=5V ID=100μA Input Capacitance, Ciss -- pF
10
Ciss -- VDS
VGS=0V f=1MHz
Cutoff Voltage, VGS(off) -- V
5 3 2
7
5
1.0 7 5 3 2 0.1 10
3
2
2
3
5
7
Drain Current, IDSS -- mA
10
100 IT16693
1.0 1.0
2
3
5
7
10
2
3
5
Crss -- VDS
Drain-to-Source Voltage, VDS -- V
450
PD -- Ta
7 100 IT16694
Reverse Transfer Capacitance, Crss -- pF
Allowable Power Dissipation, PD -- mW
7
VGS=0V f=1MHz
400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160
5
3
2
1.0 1.0
2
3
5
7
10
2
3
5
Drain-to-Source Voltage, VDS -- V
100 IT16695
7
Ambient Temperature, Ta -- °C
IT16696
No. A1965-3/4
CPH3910
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This catalog provides information as of February, 2012. Specifications and information herein are subject to change without notice.
PS No. A1965-4/4