CPH5516

Ordering number : ENA0196 CPH5516 SANYO Semiconductors DATA SHEET CPH5516 Applications • PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Relay drivers, Lamp drivers, Motor drivers, IGBT gate drive. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting. Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height) Specifications ( ) : PNP Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg PW≤1s Mounted on a ceramic board (600mm2!0.8mm) Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings (-30) 40 (- 30 -) (--) 5 (--) 2 (--) 6 (--) 400 0.9 1.2 150 --55 to +150 Unit V V V A A mA W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwideth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=(--) 30V, IE=0A VEB=(--) 4V, IC=0A VCE=(--) 2V, IC=(--) 100mA VCE=(--) 10V, IC=(--) 300mA VCB=(--) 10V, f=1MHz 200 (440) 400 (17) 12 Ratings min typ max (--) 0.1 (--) 0.1 560 MHz pF Unit µA µA Marking : EK Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71206 / 33106EA MS IM TB-00002176 No. A0196-1/5 CPH5516 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=(--) 1.5A, IB=(- 75mA -) IC=(--) 1.5A, IB=(- 75mA -) IC=(--) 10µA, IE=0A IC=(--) 1mA, RBE=∞ IE=(- 10µA, IC=0A -) See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (-30) 40 (- 30 -) (--) 5 (45) 40 (200) 350 (23) 30 Ratings min typ (- 0.94 -) max (- 1.2 -) (--170) 160 (--260) 240 Unit mV V V V V ns ns ns Package Dimensions unit : mm 7017-009 0.4 0.15 Electrical Connection 5 4 3 5 4 3 0.6 0.05 1 2 1.6 2.8 1 : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP TR) 4 : Emitter Common 5 : Base (NPN TR) Top view 1 0.95 2.9 2 0.6 1 : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP TR) 4 : Emitter Common 5 : Base (NPN TR) SANYO : CPH5 0.2 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω + 100µF VBE= --5V + 470µF VCC=12V RB RL=24Ω IC=20IB1= --20IB2=500mA For PNP, the polarity is reversed. --2.0 0.7 0.9 IC -- VCE --5 0 0.2 [PNP] --15mA --10mA Collector Current, IC -- A --1.8 --4 0m -30 - mA --2 0mA 40mA A 2.0 1.8 1.6 1.4 1.2 1.0 0.8 IC -- VCE 15 30m A [NPN] 8mA mA mA Collector Current, IC -- A --1.6 --1.4 m 20 A A 10m 6mA --8mA --1.2 50mA 4mA --6mA --1.0 --0.8 --0.6 --4mA --2mA 2mA 0.6 0.4 0.2 --0.4 --0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 IB=0mA --1.6 --1.8 --2.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IB=0mA 1.8 2.0 Collector-to-Emitter Voltage, VCE -- V IT08907 Collector-to-Emitter Voltage, VCE -- V IT08908 No. A0196-2/5 CPH5516 --2.00 --1.75 IC -- VBE VCE= --2V [PNP] 2.00 1.75 IC -- VBE VCE=2V [NPN] Collector Current, IC -- A --1.50 --1.25 --1.00 Collector Current, IC -- A 1.50 1.25 1.00 Ta=75 °C 25°C --25°C C --0.75 --0.50 --0.25 0 0 --0.2 --0.4 0.75 0.50 0.25 0 --0.6 --0.8 --1.0 IT08909 0 0.2 0.4 0.6 Ta=75 ° 0.8 --25°C 25°C 1.0 IT08910 Base-to-Emitter Voltage, VBE -- V 1000 7 Base-to-Emitter Voltage, VBE -- V 1000 7 hFE -- IC [PNP] VCE= --2V hFE -- IC [NPN] VCE=2V DC Current Gain, hFE DC Current Gain, hFE 5 5 Ta=75°C 3 Ta=75°C 25°C --25°C 25°C 3 --25°C 2 2 100 7 --0.01 100 7 0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 1000 IT08911 Collector Current, IC -- A 1000 IT08912 f T -- IC [PNP] VCE= --10V Gain-Bandwidth Product, f T -- MHz f T -- IC [NPN] VCE=10V Gain-Bandwidth Product, f T -- MHz 7 5 7 5 3 3 2 2 100 7 5 --0.01 100 7 5 0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 7 IT08913 Collector Current, IC -- A 7 5 IT08914 Cob -- VCB [PNP] f=1MHz Output Capacitance, Cob -- pF Cob -- VCB [NPN] f=1MHz Output Capacitance, Cob -- pF 5 3 3 2 2 10 7 10 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V IT08915 Collector-to-Base Voltage, VCB -- V IT08916 No. A0196-3/5 CPH5516 5 3 2 VCE(sat) -- IC [PNP] IC / IB=20 5 3 VCE(sat) -- IC [NPN] IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 0.1 7 5 3 2 --0.1 7 5 3 2 = Ta °C 75 5 --2 °C 25 °C = Ta 75 °C --2 5°C 25 °C 0.01 7 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 3 IT08917 VBE(sat) -- IC Collector Current, IC -- A 3 IT08918 [PNP] IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V VBE(sat) -- IC [NPN] IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 2 --1.0 7 5 Ta= --25°C 1.0 7 5 Ta= --25°C 75°C 25°C 75°C 25°C 3 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Forward Bias A S O 10 7 5 3 Collector Current, IC -- A IT08919 1.4 Collector Current, IC -- A IT08920 PC -- Ta [PNP / NPN] ICP=6A 100 Mounted on a ceramic board (600mm2!0.8mm) Collector Current, IC -- A 2 1.0 7 5 3 2 0.1 7 5 3 2 IC=2A D C Collector Dissipation, PC -- W 0.01 0.01 Ta=25°C Single pulse Mounted on a ceramic board (600mm2!0.8mm) For PNP, minus sign is omitted. 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 Collector-to-Emitter Voltage, VCE -- V 1m s 1.2 µs 50 10 m s s 0µ IT10742 1.0 0.9 0.8 To t s 0m ion 10 erat op al di ss 0.6 1u ip nit ati on 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT10743 No. A0196-4/5 CPH5516 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. PS No. A0196-5/5