CPH5520

Ordering number : ENA0485 CPH5520 SANYO Semiconductors DATA SHEET CPH5520 Applications • PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Relay drivers, lamp drivers, motor drivers, gate drivers. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting. Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height) Specifications ( ) : PNP Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg Mounted on a ceramic board (600mm2✕0.8mm) 1unit Mounted on a ceramic board (600mm2✕0.8mm) Conditions Ratings (--50)80 (--50)80 (--)6 (--)2 (--)5 (--)400 0.9 1.2 150 --55 to +150 Unit V V V A A mA W W °C °C Marking : EW Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30707EA TI IM TC-00000534 No. A0485-1/5 CPH5520 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwideth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(-)100mA VCE=(--)10V, IC=(--)300mA VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)50mA IC=(--)1A, IB=(--)50mA IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ IE=(-)10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--50)80 (--50)80 (--)6 (35)35 (200)330 (24)40 200 420 (16)8 (--165)130 (--)0.9 (--330)260 (--)1.2 Ratings min typ max (-)1 (-)1 560 MHz pF mV V V V V ns ns ns Unit µA µA Package Dimensions unit : mm (typ) 7017A-009 0.6 2.9 0.15 Electrical Connection 5 4 3 5 4 3 0.2 2.8 1.6 0.05 1 : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP TR) 4 : Emitter Common 5 : Base (NPN TR) Top view 1 2 0.6 1 0.95 2 0.4 1 : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP TR) 4 : Emitter Common 5 : Base (NPN TR) SANYO : CPH5 Switching Time Test Circuit PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω + 100µF VBE= --5V + 470µF VCC=25V RB 0.9 0.2 RL IC=10IB1= --10IB2=0.7A For PNP, the polarity is reversed. No. A0485-2/5 CPH5520 --2.0 --1.8 IC -- VCE --1 00 mA --80m [PNP] --40 mA 2.0 IC -- VCE 50m [NPN] 20mA 15mA --60 A A mA 1.8 Collector Current, IC -- A Collector Current, IC -- A --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --20m A 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 40 A m 30mA --10mA --8mA --6mA --4mA --2mA 10mA 8mA 6mA 4mA 2mA --0.4 --0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 IB=0mA --1.6 --1.8 --2.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IB=0mA 1.8 2.0 Collector-to-Emitter Voltage, VCE -- V --2.00 IT08923 Collector-to-Emitter Voltage, VCE -- V 2.00 IT08924 IC -- VBE VCE= --2V [PNP] VCE=2V 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 IC -- VBE [NPN] --1.75 Collector Current, IC -- A --1.25 Collector Current, IC -- A --1.50 --25°C °C 25°C --0.75 --0.50 --0.25 0 0 --0.2 --0.4 --0.6 Ta=7 5 --1.00 --0.8 --1.0 IT08925 0 0.2 0.4 0.6 Ta= 75°C 25°C --25°C 0.8 1.0 IT08926 Base-to-Emitter Voltage, VBE -- V 7 5 Base-to-Emitter Voltage, VBE -- V 7 5 hFE -- IC Ta=75°C [PNP] VCE= --2V hFE -- IC [NPN] VCE=2V DC Current Gain, hFE 3 2 --25°C DC Current Gain, hFE 25°C Ta=75°C 3 25°C --25°C 2 100 7 5 100 7 5 0.01 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 7 IT08927 f T -- IC Collector Current, IC -- A 7 IT08928 [PNP] VCE= --10V 5 f T -- IC [NPN] VCE=10V Gain-Bandwidth Product, f T -- MHz 5 Gain-Bandwidth Product, f T -- MHz 2 3 5 7 --1.0 2 3 3 2 3 100 7 5 3 2 2 100 7 --0.01 2 3 5 7 --0.1 10 0.01 2 3 5 7 0.1 2 3 5 7 0.1 2 3 Collector Current, IC -- A IT08929 Collector Current, IC -- A IT08930 No. A0485-3/5 CPH5520 7 5 Cob -- VCB [PNP] f=1MHz 5 Cob -- VCB [NPN] f=1MHz Output Capacitance, Cob -- pF 3 Output Capacitance, Cob -- pF 2 3 5 7 --1.0 2 3 5 7 --10 2 3 57 IT08931 3 2 2 10 7 5 10 7 5 --0.1 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 57 IT08932 Collector-to-Base Voltage, VCB -- V 5 Collector-to-Base Voltage, VCB -- V 5 VCE(sat) -- IC IC / IB=10 [PNP] IC / IB=10 3 VCE(sat) -- IC [NPN] Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 2 0.1 7 5 3 2 --0.1 7 5 3 2 C 5° =7 C Ta 5° --2 = Ta °C 25 0.01 7 5 2 °C 75 5°C --2 5°C --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A --1.0 7 IT08933 Collector Current, IC -- A 5 3 IT008934 VCE(sat) -- IC IC / IB=20 [PNP] VCE(sat) -- IC IC / IB=20 [NPN] Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 2 0.1 7 5 3 2 --0.1 7 5 3 2 C 75° Ta= 5°C --2 C 25° = Ta °C 75 C 5° --2 °C 25 0.01 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 3 IT08935 VBE(sat) -- IC Collector Current, IC -- A 3 IT08936 [PNP] IC / IB=20 VBE(sat) -- IC [NPN] IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 --1.0 Ta= --25°C 75°C 25°C 1.0 Ta= --25°C 75°C 25°C 7 7 5 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A IT08937 Collector Current, IC -- A IT08938 No. A0485-4/5 CPH5520 7 5 3 2 ASO ICP=5A IC=2A 1ms [PNP / NPN] 1.4 PC -- Ta [PNP / NPN] Mounted on a ceramic board (600mm2✕0.8mm) Collector Dissipation, PC -- W µs 100 s 0µ 50 1.2 Collector Current, IC -- A s m 10 s on 0m ati 10 per o DC 1.0 7 5 3 2 0.1 7 5 3 2 1.0 0.9 0.8 To t 1u al di ss 0.6 nit ip ati on 0.4 0.01 0.01 Ta=25°C Single pulse For PNP minus sign is omitted Mounted on a ceramic board (600mm2✕0.8mm) 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 57 0.2 0 0 20 40 60 80 100 120 140 160 IT11358 Collector-to-Emitter Voltage, VCE -- V Ambient Temperature, Ta -- °C IT11359 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2007. Specifications and information herein are subject to change without notice. PS No. A0485-5/5