CPH5522

Ordering number : ENA0326 CPH5522 SANYO Semiconductors DATA SHEET CPH5522 Applications • PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Relay drivers, lamp drivers, motor drivers, flash, MOSFET gate drive. Features • • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting. The CPH5522 consists of two chips encapsulated in a package which are equivalent to the CPH3114 and the CPH3214, respectively. Ultrasmall package facilitate miniaturization in end products (0.9mm mounting height). ( ) : PNP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg Mounted on a ceramic board (600mm2✕0.8mm) 1unit Mounted on a ceramic board (600mm2✕0.8mm) Conditions Ratings (--)15 (--)15 (--)5 (--)2 (--)5 (--)300 0.9 1.2 150 --55 to +150 Unit V V V A A mA W W °C °C Marking : EY Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22807EA TI IM TC-00000536 No. A0326-1/5 CPH5522 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwideth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=(--)12V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(-)100mA VCE=(--)2V, IC=(-)300mA VCB=(--)10V, f=1MHz IC=(--)750mA, IB=(--)15mA Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)1.5A, IB=(--)30mA Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf IC=(--)750mA, IB=(--)15mA IC=(--)10µA, IE=0A IC=(--)1mA, RBE=∞ IE=(-)10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 200 (350)450 (17)9 (--100) 120 (--180) 215 (--)0.85 (--)15 (--)15 (--)5 (50)40 (90)180 (15)20 (-160) 190 (-290) 340 (--)1.2 Ratings min typ max (--)0.1 (--)0.1 560 MHz pF mV mV mV mV V V V V ns ns ns Unit µA µA Package Dimensions unit : mm (typ) 7017A-009 2.9 0.15 Electlical Connection 5 4 3 5 4 3 0.2 2.8 1.6 0.05 1 2 1 : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP TR) 4 : Emitter Common 5 : Base (NPN TR) Top view 0.6 0.6 1 0.95 2 0.4 1 : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP TR) 4 : Emitter Common 5 : Base (NPN TR) SANYO : CPH5 Switching Time Test Circuit IB1 IB2 OUTPUT RB + 220µF VBE= --5V + 470µF VCC=5V PW=20µs DC≤1% INPUT VR 50Ω 0.9 0.2 RL 20IB1= --20IB2=IC=750mA (For PNP, the polarity is reversed.) No. A0326-2/5 CPH5522 --2.0 IC -- VCE --40 mA 0 --2 mA [PNP] 2.0 IC -- VCE 50m 40mA A 20m 30 mA [NPN] A 10mA 8mA --1.8 --1.6 --1.4 --1.2 --1.0 1.8 mA Collector Current, IC -- A A Collector Current, IC -- A --50m --3 0 --10mA --8mA --6mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 6mA --4mA --0.8 --0.6 --0.4 --0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 4mA --2mA 2mA IB=0mA --0.9 --1.0 IT11442 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 IB=0mA 0.9 1.0 Collector-to-Emitter Voltage, VCE -- V --2.0 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 2.0 IT11443 [PNP] IC -- VBE [NPN] VCE= --2V --1.8 1.8 --1.6 --1.4 --1.2 --1.0 --0.8 1.6 1.4 1.2 1.0 0.8 VCE=2V Collector Current, IC -- A Collector Current, IC -- A Ta=7 5°C 0 0.1 0.2 0.3 0.4 0.5 0.6 °C 25°C --0.4 --0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 Ta=7 5 --25°C 0.4 0.2 0 --0.6 --0.7 --0.8 --0.9 --1.0 0.7 25°C --0.6 0.6 0.8 --25°C 0.9 1.0 Base-to-Emitter Voltage, VBE -- V 1000 7 5 IT11467 hFE -- IC 25°C Ta=75 °C Base-to-Emitter Voltage, VBE -- V 1000 IT11468 [PNP] VCE= --2V 7 5 hFE -- IC 25°C [NPN] VCE=2V Ta=75°C DC Current Gain, hFE DC Current Gain, hFE 3 2 --25°C 3 2 --25°C 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 1000 IT11469 f T -- IC Collector Current, IC -- A 1000 7 IT11470 [PNP] VCE= --2V Gain-Bandwidth Product, f T -- MHz f T -- IC [NPN] VCE=2V Gain-Bandwidth Product, f T -- MHz 7 5 3 2 5 3 2 100 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A IT01697 Collector Current, IC -- A IT01698 No. A0326-3/5 CPH5522 100 7 Cob -- VCB [PNP] f=1MHz Output Capacitance, Cob -- pF 100 7 5 3 2 Cob -- VCB [NPN] f=1MHz Output Capacitance, Cob -- pF 5 3 2 10 7 5 3 2 10 7 5 3 2 1.0 --1.0 1.0 2 3 5 7 --10 2 3 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 3 2 IT01699 Collector-to-Base Voltage, VCB -- V 5 3 IT01700 VCE(sat) -- IC IC / IB=20 [PNP] VCE(sat) -- IC [NPN] IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 --0.1 7 5 3 2 0.1 7 5 3 2 = Ta °C 75 °C 25 -- °C 25 °C 25 = Ta --0.01 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 °C 75 5°C --2 0.01 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 3 IT11405 VCE(sat) -- IC Collector Current, IC -- A 5 3 IT11406 [PNP] IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V VCE(sat) -- IC [NPN] IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 2 --0.1 7 5 3 2 0.1 7 5 3 2 °C 25 °C 75 a= 5°C T --2 25 C 75° Ta= 5°C --2 °C --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A --10 7 IT11407 VBE(sat) -- IC Collector Current, IC -- A 10 IT11408 [PNP] IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 5 3 2 VBE(sat) -- IC [NPN] IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 --1.0 7 5 3 2 Ta= --25°C 1.0 7 5 3 2 Ta= --25°C 25°C 75°C 25°C 75°C --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A IT11471 Collector Current, IC -- A IT11472 No. A0326-4/5 CPH5522 10 7 5 ASO ICP=5A 1m [PNP / NPN] 1.4 PC -- Ta [PNP / NPN] Mounted on a ceramic board (600mm2✕0.8mm) s 0µ 10 IC=2A 1.0 7 5 3 2 0.1 7 5 3 2 Collector Dissipation, PC -- W Collector Current, IC -- A 3 2 s 1.2 0µ 50 s 10 DC op 1.0 0.9 0.8 0m s n era To t 1u s m 10 tio al di ss 0.6 nit ip ati on 0.4 0.01 0.1 Ta=25°C Single pulse For PNP minus sign is omitted Mounted on a ceramic board (600mm2✕0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 0.2 0 0 20 40 60 80 100 120 140 160 IT11409 Collector-to-Emitter Voltage, VCE -- V Ambient Temperature, Ta -- °C IT11410 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice. PS No. A0326-5/5