CPH5601

Ordering number:ENN6439 P-Channel Silicon MOSFET CPH5601 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. · Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting. Package Dimensions unit:mm 2168 [CPH5601] 2.9 5 4 3 0.6 0.2 0.15 1 0.95 2 0.4 0.6 1.6 2.8 0.05 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.4 1 : Drain1 2 : Drain2 3 : Gate2 4 : Source 5 : Gate1 SANYO : CPH5 0.2 0.7 0.9 Ratings –20 ±10 –1.0 –4.0 0.9 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a ceramic board (600mm2×0.8mm) 1unit Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=–1mA, VGS=0 VDS=–20V, VGS=0 VGS=±8V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–500mA ID=–500mA, VGS=–4V ID=–300mA, VGS=–2.5V VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz –0.4 1.0 1.4 420 630 100 60 25 550 890 Conditions Ratings min –20 –10 ±10 –1.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : FA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30100TS (KOTO) TA-2484 No.6439-1/4 CPH5601 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=–10V, VGS=–10V, ID=–1.0A VDS=–10V, VGS=–10V, ID=–1.0A VDS=–10V, VGS=–10V, ID=–1.0A IS=–1.0A, VGS=0 Ratings min typ 10 25 27 32 5 1 1 –0.9 –1.5 max Unit ns ns ns ns nC nC nC V Electrical Connection G1 Switching Time Test Circuit VDD=--10V S G2 0V --4V VIN ID=--500mA RL=20Ω VIN VOUT D G D1 D2 (Top view) PW=10µs D.C.≤1% P.G 50Ω CPH5601 S --1.6 ID -- VDS 0V --8.0V --3.0 ID -- VGS VDS=--10V .0V --6 . .0V --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 --3 .0V --2.5 --1 0 --4 Ta= --25 °C °C 0 --0.5 --1.0 --1.5 --2.0 --2.5 Drain Current, ID – A Drain Current, ID – A --2.0 --2.0V --1.0 --0.5 VGS=--1.5V 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --3.0 --3.5 --4.0 Drain-to-Source Voltage, VDS – V 1000 IT00780 Gate-to-Source Voltage, VGS – V 1000 75 --1.5 25° IT00781 120 140 V --2.5 RDS(on) -- VGS Ta=25°C RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 800 700 600 500 400 300 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 900 900 800 700 600 500 400 300 200 100 0 --60 --40 --20 0 20 40 60 80 100 160 ID=--0.3A --0.5A --0 I D= .3A =--2 , VGS .5V I D= A, --0.5 =--4 VGS .0V Gate-to-Source Voltage, VGS – V IT00782 Ambient Temperature, Ta – °C C IT00783 No.6439-2/4 CPH5601 10 yfs -- ID VDS=--10V Forward Transfer Admittance, | yfs | – S 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IF -- VSD VGS = 0 1.0 7 5 3 2 0.1 --0.01 Ta ° 25 =-- 2 5°C C C --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Drain Current, ID – A 1000 7 5 IT00784 1000 Diode Forward Voltage, VSD – V Ta=75 °C 25°C --25°C ° 75 Forward Current, IF – A IT00785 SW Time -- ID VDD=--10V VGS=--4V Ciss, Coss, Crss -- VDS f=1MHz 7 5 Switching Time, SW Time – ns 3 2 100 7 5 3 2 10 7 5 3 2 1.0 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Ciss, Coss, Crss – pF tr 3 2 tf td(on) td(off) 100 7 5 3 2 Ciss Coss Crss 10 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Drain Current, ID – A --10 --9 IT00786 --10 7 5 3 2 Drain-to-Source Voltage, VDS – V IT00787 VGS -- Qg VDS=--10V ID=--1A ASO IDP=--4A Gate-to-Source Voltage, VGS – V --8 Drain Current, ID – A --7 --6 --5 --4 --3 --2 --1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 --1.0 7 5 3 2 --0.1 7 5 3 2 ID=--1A 10 DC op era 1m s 10 ms 0m s 100µs Operation in this area is limited by RDS(on). tio n --0.01 --0.1 Ta=25°C Single pulse 1 unit Mounted on a ceramic board (600mm2×0.8mm) 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Total Gate Charge, Qg – nC 1.2 IT00788 Drain-to-Source Voltage, VDS – V IT00790 PD -- Ta Allowable Power Dissipation, PD – W 1.0 0.9 0.8 M ou nte do na ce 0.6 ram ic bo ard (6 0.4 00 mm 2 ×0 .8m 0.2 m) 1u nit 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta – °C IT00789 No.6439-3/4 CPH5601 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6439-4/4