CPH5603

Ordering number:ENN6388 P-Channel Silicon MOSFET CPH5603 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting. Package Dimensions unit:mm 2168 [CPH5603] 2.9 5 4 3 0.6 0.2 0.15 1 0.95 2 0.4 0.6 1.6 2.8 0.05 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.4 1 : Drain1 2 : Drain2 3 : Gate2 4 : Source 5 : Gate1 SANYO : CPH5 0.2 0.7 0.9 Ratings –30 ±20 –1.0 –4.0 0.9 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a ceramic board (600mm2×0.8mm) 1unit Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–500mA ID=–500mA, VGS=–10V ID=–300mA, VGS=–4V VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz –1.0 0.6 0.9 360 690 85 55 13 470 970 Conditions Ratings min –30 –10 ±10 –2.5 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : FC Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30100TS (KOTO) TA-2662 No.6388-1/4 CPH5603 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=–10V, VGS=–10V, ID=–1.0A VDS=–10V, VGS=–10V, ID=–1.0A VDS=–10V, VGS=–10V, ID=–1.0A IS=–1.0A, VGS=0 Ratings min typ 8 14 36 24 4 1 1 –0.9 –1.5 max Unit ns ns ns ns nC nC nC V Electrical Connection G1 Switching Time Test Circuit G2 S VDD=--15V 0V --10V VIN VIN ID=--500mA RL=30Ω PW=10µs D.C.≤1% D G VOUT D1 D2 (Top view) P.G 50Ω S CPH5603 --1.6 --1.4 --1.2 --1.0 --0.8 ID -- VDS .0V .0V --3.0 ID -- VGS Ta= --25 0 --1 --2 --3 --4 --1 0 .0V Drain Current, ID – A Drain Current, ID – A --8 --1.5 --3.5V --0.6 --0.4 --0.2 0 --1.0 --3.0V VGS=--2.5V --0.5 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --5 --6 IT01086 Drain-to-Source Voltage, VDS – V 1000 IT01085 Gate-to-Source Voltage, VGS – V 1200 1100 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS (on) – mΩ RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 900 800 700 600 500 400 300 200 100 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 1000 900 800 700 600 500 400 300 200 100 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 --3 I D= 00m --4 S= A, VG V ID=--300mA --500mA I D= A, V G --500m --10 S= Gate-to-Source Voltage, VGS – V IT01087 Ambient Temperature, Ta – °C 75° V IT01088 --4.0V --2.0 C No.6388-2/4 25° C --6 --2.5 °C VDS=--10V CPH5603 Forward Transfer Admittance, | yfs | – S 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 yfs -- ID VDS=--10V --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 0 --0.2 --0.4 IF -- VSD VGS = 0 °C --25 Ta= C 75° 25° C Forward Current, IF – A Ta=75 °C 25°C --25°C --0.6 --0.8 --1.0 --1.2 --1.4 Drain Current, ID – A 100 7 IT01089 1000 Diode Forward Voltage, VSD – V IT01090 SW Time -- ID VDD=--15V VGS=--10V td(off) tr tf Ciss, Coss, Crss -- VDS f=1MHz 7 5 3 2 100 7 5 3 2 Switching Time, SW Time – ns 5 3 2 Ciss, Coss, Crss – pF Ciss Coss 10 7 5 3 2 td(on) Crss 10 7 5 3 2 1.0 1.0 5 7 --0.1 2 3 5 7 --1.0 2 3 5 0 --5 --10 --15 --20 --25 --30 IT01092 Drain Current, ID – A --10 --9 IT01091 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Drain-to-Source Voltage, VDS – V VGS -- Qg VDS=--10V ID=--1.0A ASO IDP=--4.0A Gate-to-Source Voltage, VGS – V --8 100µs 1m s Drain Current, ID – A --7 --6 --5 --4 --3 --2 --1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ID=--1.0A 10 ms 10 DC Operation in this area is limited by RDS(on). 0m s op era tio n --0.01 --0.1 Ta=25°C Single pulse 1 unit Mounted on a ceramic board (600mm2×0.8mm) 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Total Gate Charge, Qg – nC 1.2 IT01093 Drain-to-Source Voltage, VDS – V IT01094 PD -- Ta Allowable Power Dissipation, PD – W 1.0 0.9 0.8 M ou nte do na ce 0.6 ram ic bo ard 0.4 (6 00 mm 2 ×0 0.2 .8m m) 1u nit 160 0 0 20 Ambient Temperature, Ta – °C 40 60 80 100 120 140 IT01095 No.6388-3/4 CPH5603 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6388-4/4