CPH5614

Ordering number : ENN8119 CPH5614 N-Channel Silicon MOSFET CPH5614 Features • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8mm) 1unit Conditions Ratings 100 ±20 1 4 0.9 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0 VDS=100V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=500mA ID=500mA, VGS=10V ID=500mA, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 100 1 ±10 1.2 0.98 1.4 480 580 240 20 12 8 3 30 11 630 810 2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns Marking : FW Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2504 TS IM TA-100261 No.8119-1/4 CPH5614 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=50V, VGS=10V, ID=1A VDS=50V, VGS=10V, ID=1A VDS=50V, VGS=10V, ID=1A IS=1A, VGS=0 Ratings min typ 6.5 1.1 1.1 0.82 1.2 max Unit nC nC nC V Package Dimensions unit : mm 2168 2.9 5 4 3 0.6 0.2 Electrical Connection 5 0.15 4 3 1.6 2.8 0.05 1 : Drain1 2 : Drain2 3 : Gate2 4 : Source 5 : Gate1 Top view 1 0.95 2 0.4 0.6 1 2 1 : Drain1 2 : Drain2 3 : Gate2 4 : Source 5 : Gate1 SANYO : CPH5 0.2 0.4 Switching Time Test Circuit VIN 10V 0V VIN PW=10µs D.C.≤1% ID=0.5A RL=100Ω VDD=50V 0.7 0.9 D VOUT G CPH5614 P.G 50Ω S 1.0 ID -- VDS 3.0 V 2.0 1.8 1.6 ID -- VGS VDS=10V 6.0 10.0 V V 0.8 4.0 V Drain Current, ID -- A Drain Current, ID -- A 1.4 1.2 1.0 0.8 0.6 3.5 V 0.4 2.5V 0.2 0.2 0 0 0.2 0.4 0.6 0.8 1.0 VGS=2.0V 1.2 1.4 1.6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, VDS -- V IT07445 Gate-to-Source Voltage, VGS -- V 25° C 0.4 Ta=7 5 0.6 --25°C °C IT07446 No.8119-2/4 CPH5614 1000 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C ID=0.5A 1000 900 800 700 600 500 400 300 200 --60 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 900 800 700 600 =0 ID .5A ,VG =4 S V =1 S 0V 500 =0 ID .5A ,VG 400 300 0 2 4 6 8 10 12 14 16 18 20 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 5 yfs -- ID IT07447 3 2 1.0 Ambient Temperature, Ta -- °C IT07448 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S VDS=10V 3 2 Forward Current, IF -- A 1.0 7 5 3 2 = Ta --2 5 75 °C 0.1 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 0.01 0.3 0.4 0.5 Ta= 0.6 --2 5°C 0.7 75° 7 5 C 25 °C 25 C ° °C 7 5 3 2 0.8 0.9 1.0 IT07450 Drain Current, ID -- A 7 5 IT07449 7 5 3 SW Time -- ID td(off) Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=50V VGS=10V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 3 2 Ciss 2 tf 10 7 5 3 2 100 7 5 3 2 td(on) Coss tr Crss 10 7 5 2 3 5 7 1.0 2 3 0 5 10 15 20 25 30 IT07452 1.0 0.1 Drain Current, ID -- A 10 IT07451 7 5 3 2 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS=50V ID=1A 8