CPH5826

Ordering number : ENN7786 CPH5826 CPH5826 Features • • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications • • DC / DC converter applications. Composite type with a N-channel sillicon MOSFET (MCH3406) and a schottky barrier diode (SB07-03C) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. • Low reverse current. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 35 700 5 --55 to +125 --55 to +125 V V mA A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8mm) 1unit 20 ±10 3 12 0.9 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : XC Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62504 TS IM TA-100747 No.7786-1/5 CPH5826 Electrical Characteristics at Ta=25°C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF IR C trr IR=300µA IF=700mA VR=15V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. 25 10 30 0.55 80 V V µA pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=4V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A IS=3A, VGS=0 0.4 3.0 4.9 48 58 72 280 60 38 13 35 35 25 8.8 0.85 0.85 0.82 1.2 63 82 110 20 1 ±10 1.3 V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm 2171 2.9 5 4 3 Electrical Connection 5 4 3 0.6 1.6 2.8 0.05 0.2 0.15 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 1 2 Top view 1 0.95 2 0.4 0.6 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.2 0.4 0.7 0.9 No.7786-2/5 CPH5826 Switching Time Test Circuit [MOSFET] 4V 0V VIN PW=10µs D.C.≤1% ID=1.5A RL=6.67Ω VOUT 10µs --5V trr Test Circuit VDD=10V VIN [SBD] Duty≤10% 100mA D G 100mA 50Ω 100Ω 10Ω P.G 50Ω S CPH5826 trr 3.0 ID -- VDS 10.0V 4.0V 2.5 V 1.8V [MOSFET] 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 ID -- VGS VDS=10V [MOSFET] 2.5 Drain Current, ID -- A 1.5 V 2.0 1.5 VGS=1.0V Drain Current, ID -- A 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 160 Drain-to-Source Voltage, VDS -- V IT03490 RDS(on) -- VGS [MOSFET] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Gate-to-Source Voltage, VGS -- V 140 Ta= 7 5°C 1.0 25 °C --25°C 10mA IT03491 RDS(on) -- Ta [MOSFET] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 120 100 80 60 40 20 0 0 2 4 6 8 10 IT03492 120 100 1.0A 1.5A ID=0.5A 80 60 V =1.8 , VGS 0.5A V I D= =2.5 A, VGS =1.0 .0V 4 ID S= .5A, V G I D=1 40 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, yfs -- S 10 7 5 3 yfs -- ID Ambient Temperature, Ta -- °C 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IT03493 [MOSFET] IF -- VSD [MOSFET] VGS=0 VDS=10V 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 °C 25 23 5 7 0.01 23 5 7 0.1 23 5 7 1.0 23 IT06996 0.01 0.3 0.4 0.5 Ta= 7 5°C 25° C --25 °C 0.6 0.7 0.8 C 5° --2 °C = 75 Ta Forward Current, IF -- A 2 0.9 1.0 1.1 Drain Current, ID -- A Diode Forward Voltage, VSD -- V IT03495 No.7786-3/5 CPH5826 3 2 SW Time -- ID [MOSFET] VDD=10V VGS=4V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz Switching Time, SW Time -- ns 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 td(off) tr Ciss tf td(on) 100 7 5 3 Coss Crss 10 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 10 IT03496 2 10 7 5 7 0 2 4 6 8 10 12 14 16 18 20 VGS -- Qg [MOSFET] Gate-to-Source Voltage, VGS -- V VDS=10V ID=3A Drain Current, ID -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Drain-to-Source Voltage, VDS -- V IT03497 ASO [MOSFET] IDP=12A ≤10µs 10 0µ s 10 ID=3A 1m m s s 10 0m DC s op er ati on Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(600mm2!0.8mm)1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 9 10 0.01 0.01 Total Gate Charge, Qg -- nC 1.0 IT03498 PD -- Ta M ou Drain-to-Source Voltage, VDS -- V IT06997 [MOSFET] Allowable Power Dissipation, PD -- W 0.9 0.8 nt ed on ac 0.6 er am ic bo ar d( 0.4 60 0m m2 ! 0. 8m 0.2 m )1 un it 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 5 3 2 IT06998 IF -- VF [SBD] 5 2 1000 5 2 100 5 2 10 5 2 1.0 5 2 0.1 0 IR -- VR 5° Ta=12 C [SBD] Reverse Current, IR -- µA Forward Current, IF -- A 1.0 7 5 3 2 100°C 75°C 25° C Ta= 1 0.1 7 5 3 2 0.01 0 25°C 50°C 25°C 0.2 0.4 0.6 0.8 1.0 ID00383 5 10 15 20 25 30 35 ID00384 Forward Voltage, VF -- V Reverse Voltage, VR -- V No.7786-4/5 CPH5826 Average Forward Power Dissipation, PF(AV) -- W 0.8 PF(AV) -- IO (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° Rectangular wave [SBD] 2 C -- VR [SBD] f=1MHz Interterminal Capacitance, C -- pF 1.0 ID00385 100 7 5 0.6 (4) (3) (2) 0.4 θ 360° (1) 3 2 0.2 Sine wave 180° 10 7 5 1.0 2 3 5 7 10 2 3 5 ID00386 0 0 0.2 0.4 0.6 360° 0.8 Average Forward Current, IO -- A 6 IFSM -- t IS Reverse Voltage, VR -- V [SBD] Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave 5 4 20ms t 3 2 1 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s ID00387 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2004. Specifications and information herein are subject to change without notice. PS No.7786-5/5