CPH5831

Ordering number : ENN8220 CPH5831 CPH5831 Features • • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications • • DC / DC converters. Composite type with a N-Channel Silicon MOSFET (MCH3406) and a Schottky Barrier Diode (SBS010M) contained in one package facilitating high-density mounting. [MOS] • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle 15 15 2 10 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8mm) 1unit 20 ±10 3 12 0.9 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : XH Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN GI IM 12805PE TS IM TB-100797 No.8220-1/6 CPH5831 Electrical Characteristics at Ta=25°C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF 1 VF 2 IR C trr Rth(j-a) IR=1.5mA IF=0.5A IF=1A VR=6V VR=10V, f=1MHz cycle IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (600mm2!0.8mm) 15 0.27 0.30 65 15 138 0.32 0.35 600 V V V µA pF ns °C / W V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=20V, VGS=0 VGS= ±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=4V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A IS=3A, VGS=0 0.4 3.36 5.6 48 58 72 280 60 38 13 35 35 25 8.8 0.85 0.85 0.82 1.2 63 82 110 20 1 ±10 1.3 V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm 2171 2.9 5 4 3 0.6 Electrical Connection 5 0.2 4 3 0.15 0.6 1.6 2.8 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 1 2 Top view 1 0.95 2 0.4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.2 0.4 0.7 0.9 No.8220-2/6 CPH5831 Switching Time Test Circuit [MOSFET] VIN 4V 0V VIN PW=10µs D.C.≤1% ID=1.5A RL=6.67Ω VOUT 50Ω 10µs --5V 100Ω 10Ω trr Test Circuit [SBD] Duty≤10% VDD=10V 100mA D G 100mA trr CPH5831 P.G 50Ω S 3.0 ID -- VDS 10.0V 4.0V 2.5 V 1.8V 1.5 V [MOSFET] 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 ID -- VGS VDS=10V 2.5 Drain Current, ID -- A 2.0 1.5 VGS=1.0V Drain Current, ID -- A 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 160 Drain-to-Source Voltage, VDS -- V IT03490 RDS(on) -- VGS [MOSFET] Ta=25°C 140 IT03491 Gate-to-Source Voltage, VGS -- V [MOSFET] RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 120 100 80 60 40 20 0 0 2 4 6 8 10 IT03492 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 100 1.0A 1.5A ID=0.5A 80 60 V =1.8 , VGS 0.5A V I D= =2.5 A, VGS =1.0 ID =4.0V , V GS =1.5A ID 40 20 0 --60 --40 --20 0 20 40 Ta= 7 5°C 1.0 60 25 °C --25°C 80 100 120 10mA [MOSFET] 140 160 Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C IT03493 No.8220-3/6 CPH5831 3 yfs -- ID VDS=10V [MOSFET] Forward Transfer Admittance, yfs -- S 2 10 7 5 3 2 1.0 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IF -- VSD [MOSFET] VGS=0 2 5° C = Ta --2 C 5° C 75° Forward Current, IF -- A 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 3 2 5 7 10 IT03494 0.01 0.2 0.3 0.4 0.5 Ta= 7 5°C 25° C --25 °C 0.6 0.7 0.8 0.9 1.0 1.1 1.2 SW Time -- ID [MOSFET] VDD=10V VGS=4V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Diode Forward Voltage, VSD -- V IT03495 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz Switching Time, SW Time -- ns 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 td(off) tr Ciss tf td(on) 100 7 5 3 Coss Crss 10 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 10 IT03496 3 2 10 7 5 7 0 2 4 6 8 10 12 14 16 18 20 VGS -- Qg [MOSFET] Drain-to-Source Voltage, VDS -- V IT03497 [MOSFET] ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=3A Drain Current, ID -- A IDP=12A ID=3A