CPH5835_07

Ordering number : ENN8207 CPH5835 CPH5835 Features • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-Channel Sillicon MOSFET (CPH3309) and a Schottky Barrier Diode (SBS010M) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • Low voltage drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 2 10 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8mm) 1unit --20 ±10 --1.5 --6.0 0.9 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : XM Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12805PE TS IM TB-00001006 No.8207-1/6 CPH5835 Electrical Characteristics at Ta=25°C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF 1 VF 2 IR C trr Rth(j-a) IR=1.5mA IF=0.5A IF=1A VR=6V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (600mm2!0.8mm) 15 0.27 0.30 65 15 138 0.32 0.35 600 V V V µA pF ns °C / W V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID= --1mA, VGS=0 VDS= --20V, VGS=0 VGS=±8V, VDS=0 VDS= --10V, ID= --1mA VDS= --10V, ID= --800mA ID= --800mA, VGS= --4V ID= --400mA, VGS= --2.5V ID= --70mA, VGS= -1.8V VDS= --10V, f=1MHz VDS= --10V, f=1MHz VDS= --10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS= --10V, VGS= --4V, ID= -1.5A VDS= --10V, VGS= --4V, ID= -1.5A VDS= --10V, VGS= --4V, ID= -1.5A IS= --1.5A, VGS=0 --0.4 1.3 2.3 180 240 350 290 40 25 10 35 32 27 3.2 0.8 0.6 --0.87 --1.5 235 340 600 --20 --1 ±10 --1.3 V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm 2171 2.9 5 4 3 Electrical Connection 5 0.15 4 3 0.6 1.6 2.8 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 1 2 0.6 0.2 Top view 1 0.95 2 0.4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.2 0.4 0.7 0.9 No.8207-2/6 CPH5835 Switching Time Test Circuit [MOSFET] VIN 0V --4V VIN PW=10µs D.C.≤1% ID= --800mA RL=12.5Ω VDD= --10V trr Test Circuit [SBD] Duty≤10% 100mA 10µs G --5V trr MCH5835 P.G 50Ω S V --2.0 --1.8 --1.6 ID -- VDS --3 --2 .0V .5V [MOSFET] --2.0 --1.8 ID -- VGS 100mA D VOUT 50Ω 100Ω 10Ω [MOSFET] VDS= --10V --4.0 V .0 V Drain Current, ID -- A --6.0 --2 --1.6 Drain Current, ID -- A --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.1 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 VGS= --1.5V --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 --1.0 --25 5°C °C 25° C Ta= 7 --1.5 --2.0 10mA --2.5 80 100 120 140 160 IT02734 600 IT02731 Drain-to-Source Voltage, VDS -- V [MOSFET] RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 500 IT02732 Gate-to-Source Voltage, VGS -- V [MOSFET] RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 500 400 400 --0.8A 300 300 ID= --0.4A 200 200 V --2.5 S= A, VG --0.4 V I D= = --4.0 , V GS --0.8A I D= 100 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 0 --60 --40 --20 0 20 40 60 Gate-to-Source Voltage, VGS -- V IT02733 Ambient Temperature, Ta -- °C No.8207-3/6 CPH5835 10 yfs -- ID [MOSFET] VDS= --10V Forward Transfer Admittance, yfs -- S 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 IF -- VSD [MOSFET] VGS=0 C 25° °C -25 =Ta C 75° 1.0 7 5 3 2 Forward Current, IF -- A 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 0 --0.2 --0.4 Ta=7 5 °C 25°C --25°C --0.6 --0.8 --1.0 --1.2 --1.4 Drain Current, ID -- A 100 7 IT02735 SW Time -- ID VDD= --10V VGS= --4V td(off) [MOSFET] 1000 7 5 3 2 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz Diode Forward Voltage, VSD -- V IT02736 Switching Time, SW Time -- ns 5 3 2 tf Ciss, Coss, Crss -- pF Ciss 100 7 5 3 2 tr 10 7 5 3 3 5 7 --0.1 2 3 td(on) Coss Crss 10 5 7 --1.0 2 3 5 0 --5 --10 --15 --20 Drain Current, ID -- A --4 IT02737 VGS -- Qg [MOSFET] Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --1.5A Drain Current, ID -- A --3 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --2 --1 IT02738 Drain-to-Source Voltage, VDS -- V [MOSFET] ASO IDP= --6.0A