CPH5838

Ordering number : ENN8235 CPH5838 CPH5838 Features • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications DC / DC converters. Composite type with a P-Channel Sillicon MOSFET (MCH3307) and a Schottky Barrier Diode (SBS004) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 1 10 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8mm) 1unit --20 ±10 --1 --4 0.9 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : XQ Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22805PE TS IM TB-00001210 No.8235-1/6 CPH5838 Electrical Characteristics at Ta=25°C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF 1 VF 2 IR C trr Rth(j-a) IR=1mA IF=0.5A IF=1A VR=6V VR=10V, f=1MHz, cycle IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (900mm2!0.8mm) 15 0.30 0.35 42 15 110 0.35 0.40 500 V V V µA pF ns °C / W V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0 VDS=--20V, VGS=0 VGS=±8V, VDS=0 VDS=--10V, ID=-1mA VDS=--10V, ID=-500mA ID=--500mA, VGS=-4V ID=--300mA, VGS=-2.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-4V, ID=-1A VDS=--10V, VGS=-4V, ID=-1A VDS=--10V, VGS=-4V, ID=-1A IS=--1A, VGS=0 --0.4 0.72 1.2 380 540 115 23 15 8 6 15 7 1.5 0.4 0.3 --0.89 --1.2 500 760 --20 --1 ±10 --1.4 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm 2171A 0.4 5 4 3 0.15 Electrical Connection 5 4 3 1.6 0.6 2.8 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 1 2 0.6 0.2 Top view 1 0.95 2.9 2 0.7 0.9 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.2 No.8235-2/6 CPH5838 Switching Time Test Circuit [MOSFET] VIN 0V --4V VIN PW=10µs D.C.≤1% ID= --500mA RL=20Ω VOUT 50Ω 10µs --5V trr 100Ω 10Ω trr Test Circuit [SBD] Duty≤10% VDD= --10V 100mA D G P.G 50Ω CPH5838 S --1.0 ID -- VDS V [MOSFET] --2.0 --1.8 --1.6 ID -- VGS --2 5°C Ta= 100mA [MOSFET] 75 °C --2.5 0V --3 . Drain Current, ID -- A --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --2 .0V Drain Current, ID -- A --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 Ta = C --0.2 0 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 25 ° --1.0 --2 5 75 °C °C VGS= --1.5V --1.5 --2.0 25° --3.0 1000 Drain-to-Source Voltage, VDS -- V IT03501 RDS(on) -- VGS [MOSFET] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1000 900 800 700 600 500 400 300 200 100 0 --60 --40 IT03502 Gate-to-Source Voltage, VGS -- V [MOSFET] RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 900 800 700 600 500 400 300 200 100 0 0 --2 --4 --6 --8 --10 IT03503 --0.5A ID= --0.3A VG .3A, = --0 ID 0.5A I D= -- --2 S= .5V V = --4.0 , V GS --20 0 20 40 60 80 100 120 C 140 160 IT03504 --0.8 --2 --0.9 --4. 0 .5V VDS= --10V Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C No.8235-3/6 10mA CPH5838 3 yfs -- ID [MOSFET] VDS= --10V Forward Transfer Admittance, yfs -- S 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IF -- VSD [MOSFET] VGS=0 1.0 7 5 Ta= ° --25 C C 75° 3 2 Forward Current, IF -- A C 25° Ta= 75° C 25°C --0.7 0.1 --0.01 2 3 5 7 --0.1 2 3 5 Drain Current, ID -- A 3 2 --1.0 IT03505 7 --0.01 --0.4 --0.5 --0.6 --25° C --0.8 --0.9 --1.0 --1.1 --1.2 SW Time -- ID [MOSFET] VDD= --10V VGS= --4V Ciss, Coss, Crss -- pF 3 2 Diode Forward Voltage, VSD -- V IT03506 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz Switching Time, SW Time -- ns 100 7 5 3 2 10 7 5 3 2 1.0 --0.1 10 2 3 5 7 --1.0 2 3 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Ciss 100 7 5 td(off) td(on) tf 3 2 tr Coss Crss Drain Current, ID -- A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT03507 VGS -- Qg [MOSFET] --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 1.4 1.6 --0.01 --0.01 Drain-to-Source Voltage, VDS -- V IT03508 ASO [MOSFET] Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --1A Drain Current, ID -- A IDP= --4A 10