CPH5852

Ordering number : ENA0336 CPH5852 SANYO Semiconductors DATA SHEET CPH5852 Features • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications • • Composite type containing a P-Channel MOSFET (MCH3312) and a Schottky Barrier Diode (SB1003M3), facilitating high-density mounting. [MOS] • Low ON-resistance • Ultrahigh-speed switching • 4V drive [SBD] • Short reverse recovery time • Low forward voltage Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle 30 35 1 10 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8mm) 1unit --30 ±20 --2 --8 0.9 150 --55 to +125 V V A A W °C °C Symbol Conditions Ratings Unit Marking : YE Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN GI No. 82306 / 60506PE MS IM TB-00002326 IM A0336-1/6 CPH5852 Electrical Characteristics at Ta=25°C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=0.5mA IF=0.7A IF=1.0A VR=16V VR=10V, f=1MHz cycle IF=IR=100mA, See specified Test Circuit. 30 0.45 0.48 27 10 0.5 0.53 15 V V V µA pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGSS=± 16V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-1A ID=--1A, VGS=--10V ID=--500mA, VGS=-4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=--2A VDS=--10V, VGS=-10V, ID=--2A VDS=--10V, VGS=-10V, ID=--2A IS=--2A, VGS=0V --30 --1 ±10 --1.2 1.2 2.0 110 205 200 47 32 7.2 2.9 21 8.7 5.5 0.98 0.82 --0.85 --1.2 145 290 --2.6 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mmm 7017A-005 2.9 0.15 Electrical Connection 5 0.6 4 3 5 4 3 0.2 2.8 1.6 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 1 2 Top view 0.6 1 0.95 2 0.4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.9 0.2 No. A0336-2/6 CPH5852 Switching Time Test Circuit [MOSFET] VIN 0V --10V VIN PW=10µs D.C.≤1% ID= --1A RL=15Ω VOUT 50Ω 10µs --5V 100Ω 10Ω trr Test Circuit [SBD] Duty≤10% VDD= --15V 100mA D G 100mA trr CPH5852 P.G 50Ω S V --2.0 ID -- VDS V --10. 0 [MOSFET] --5.0 ID -- VGS VDS= --10V --6.0 0V --4. --4.5 --4.0 --1.6 Drain Current, ID -- A . --3 --1.2 5V Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --0.8 VGS= --3.0V --0.4 --1.0 --0.5 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 25 5°C °C --25° C --3.0 --3.5 --1.5 Ta= 7 10mA [MOSFET] --4.0 --4.5 400 Drain-to-Source Voltage, VDS -- V IT03212 RDS(on) -- VGS [MOSFET] Ta=25°C 400 Gate-to-Source Voltage, VGS -- V IT03213 RDS(on) -- Ta [MOSFET] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 350 300 250 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 350 300 250 200 150 100 50 0 --60 --1.0A 200 -I D= , VG 0.5A --4 S= V ID= --0.5A 150 100 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 1.0 I D= -- = --10 A, V GS V --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT03214 Ambient Temperature, Ta -- °C IT03215 No. A0336-3/6 CPH5852 10 yfs -- ID Forward Transfer Admittance, yfs -- S 7 5 [MOSFET] VDS= --10V --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IS -- VSD [MOSFET] VGS=0V 2 25 °C 1.0 7 5 3 2 °C -25 °C =75 Ta Source Current, IS -- A 3 Ta=7 5°C --0.3 --0.4 --0.5 --0.6 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 2 100 5 7 --10 IT03216 --0.01 --0.2 --0.7 --25°C --0.8 --0.9 25°C --1.0 --1.1 --1.2 SW Time -- ID [MOSFET] 3 2 IT03217 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] VDD= --15V VGS= --10V Ciss, Coss, Crss -- pF f=1MHz Ciss Switching Time, SW Time -- ns 7 5 3 2 10 7 5 3 2 1.0 --0.1 10 2 3 5 7 --1.0 2 3 5 IT03218 0 --5 --10 --15 --20 --25 --30 100 7 5 td(off) td(on) tf Coss 3 2 Crss tr Drain Current, ID -- A --10 --9 VGS -- Qg [MOSFET] Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --2A Drain Current, ID -- A --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Drain-to-Source Voltage, VDS -- V IT03219 ASO [MOSFET] ≤10µs IDP= --8A 10 s 0µ 1m --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 IT03220 ID= --2A s 10 m s 10 0m s Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (600mm2!0.8mm) 1unit 5 7--0.1 23 5 7--1.0 2 3 5 7 --10 23 DC op er ati on --0.01 --0.01 2 3 Total Gate Charge, Qg -- nC 1.0 PD -- Ta M ou Drain-to-Source Voltage, VDS -- V 5 7--100 IT03221 [MOSFET] Allowable Power Dissipation, PD -- W 0.9 0.8 nt ed on ac 0.6 er am ic bo ar d 0.4 (6 00 m m2 ! 0. 0.2 8m m )1 un it 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C IT03222 No. A0336-4/6 CPH5852 3 2 1.0 IF -- VF 10000 5 1000 5 IR -- VR Ta=125°C 100°C Reverse Current, IR -- µA Forward Current, IF -- A 7 5 3 2 0.1 7 5 3 2 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IT09553 100 5 10 5 1.0 5 0.1 5 0.01 5 75°C 50°C 25°C 0°C Ta= 125 °C 100 °C 75°C 50°C 25°C 0°C --25°C --25°C 0.001 5 0.0001 0 5 10 15 20 25 30 35 IT09554 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 PF(AV) -- IO Reverse Voltage, VR -- V 3 2 C -- VR Rectangular wave θ 360° (1) (2) (4) (3) Interterminal Capacitance, C -- pF 100 7 5 3 2 Sine wave 180° 360° (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.4 0.6 0.8 1.0 1.2 IT09555 10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Average Output Current, IO -- A 14 IFSM -- t IS Reverse Voltage, VR -- V IT09556 Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave 12 10 20ms t 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s ID00435 No. A0336-5/6 CPH5852 Note on usage : Since the CPH5852 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2006. Specifications and information herein are subject to change without notice. PS No. A0336-6/6