CPH5901

Ordering number : ENN8278A CPH5901 CPH5901 Features • • TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly. The CPH5901 is formed with two chips, being equivalent to the 2SK932 and the other the 2SC4639, placed in one package. Common drain and emitter. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [FET] Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation [Common Ratings] Total Dissipation Junction Temperature Storage Temperature PT Tj Tstg Mounted on a ceramic board (600mm2✕0.8mm) 500 150 --55 to +150 mW °C °C VCBO VCEO VEBO IC ICP IB PC Mounted on a ceramic board (600mm2✕0.8mm) 55 50 6 150 300 30 350 V V V mA mA mA mW VDSX VGDS IG ID PD Mounted on a ceramic board (600mm2✕0.8mm) 15 --15 10 50 350 V V mA mA mW Symbol Conditions Ratings Unit Marking : 1A Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005AC MS IM TB-00001557 / 32505AC TS IM TA-3705 No.8278-1/6 CPH5901 Electrical Characteristics at Ta=25°C Parameter [FET] Gate-to-Drain Breakdown Voltage Gate Cutoff Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Noise Figure [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCB=35V, IE=0A VEB=4V, IC=0A VCE=6V, IC=1mA VCE=6V, IC=10mA VCB=6V, f=1MHz IC=50mA, IB=5mA IC=50mA, IB=5mA IC=10μA, IE=0A IC=1mA, RBE=∞ IE=10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 55 50 6 0.15 0.75 0.20 135 200 1.7 0.08 0.8 0.4 1.0 0.1 0.1 400 MHz pF V V V V V μs μs μs μA μA V(BR)GDS IGSS VGS(off) IDSS ⏐yfs⏐ Ciss Crss NF IG=- μA, VDS=0V -10 VGS=--10V, VDS=0V VDS=5V, ID=100μA VDS=5V, VGS=0V VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1MHz VDS=5V, VGS=0V, f=1MHz VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz --15 --1.0 --0.2 6.0* 25 50 10 3.0 1.5 -0.6 --1.4 20.0* V nA V mA mS pF pF dB Symbol Conditions Ratings min typ max Unit * : The CPH5901 is classified by IDSS as follows : (unit : mA) Rank F G IDSS 6.0 to 12.0 10.0 to 20.0 Package Dimensions unit : mm 7017-007 0.4 0.15 Electrical Connection 5 4 3 5 4 3 0.6 1.6 2.8 0.05 1 : Collector 2 : Gate 3 : Source 4 : Emitter / Drain 5 : Base 1 2 0.2 1 0.95 2.9 2 0.6 Top view 1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base SANYO : CPH5 0.2 PW=20μs D.C.≤1% INPUT VR 50Ω RB + 220μF VBE= --5V Switching Time Test Circuit IB1 IB2 OUTPUT RL + 470μF VCC=20V 10IB1= --10IB2= IC=10mA No.8278-2/6 0.7 0.9 CPH5901 16 14 ID -- VDS [FET] 20 ID -- VDS [FET] Drain Current, ID -- mA 12 10 Drain Current, ID -- mA VGS=0V 16 VGS=0V 12 --0.1V 8 6 4 2 0 0 --0.1V 8 --0.2V --0.2V 4 --0.3V --0.6V 0.4 0.8 1.2 1.6 --0.3V --0.6V --0.4V --0.5V 2.0 ITR10329 --0.4V --0.5V 10 ITR10330 0 0 2 4 6 8 Drain-to-Source Voltage, VDS -- V Drain-to-Source Voltage, VDS -- V 40 2 ID -- VGS [FET] VGS(off) -- IDSS [FET] VDS=5V VDS=5V ID=100μA Cutoff Voltage, VGS(off) -- V Drain Current, ID -- mA 30 --1.0 7 5 20 A 0m =2 S mA I DS 15 A m 10 A 6m --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 3 10 2 0 --0.1 3 5 7 10 2 3 5 ITR10332 Gate-to-Source Voltage, VGS -- V 100 ITR10331 ⏐yfs⏐ -- ID Drain Current, IDSS -- mA 100 [FET] ⏐yfs⏐ -- IDSS [FET] Forward Transfer Admittance, ⏐yfs⏐ -- mS 7 5 Forward Transfer Admittance, ⏐yfs⏐ -- mS VDS=5V f=1kHz 3 2 A 6m S= I DS A 10m 20m A 7 VDS=5V VGS=0V f=1kHz 5 3 10 7 5 3 1.0 2 10 2 3 5 7 10 2 3 5 3 5 7 10 2 3 5 ITR10334 Drain Current, ID -- mA 3 2 ITR10333 Drain Current, IDSS -- mA 10 Ciss -- VDS [FET] Crss -- VDS [FET] Reverse Transfer Capacitance, Crss -- pF VGS=0V f=1MHz 7 5 VGS=0V f=1MHz Input Capacitance, Ciss -- pF 10 7 5 3 2 3 2 1.0 7 5 1.0 5 7 1.0 2 3 5 7 10 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V ITR10335 Drain-to-Source Voltage, VDS -- V ITR10336 No.8278-3/6 CPH5901 14 NF -- f [FET] 12 VDS=5V ID=10mA 14 NF -- f [FET] 12 VDS=5V Rg=1kΩ Noise Figure, NF -- dB Noise Figure, NF -- dB 10 10 A 1m I D= 8 8 Rg =5 6 6 Ω 00 A 3m 4 4 Ω 1k 10 kΩ 5 100 2 5 2 5 10k 2 5 100k 2 5 1M ITR10337 mA 10 2 2 0 10 0 10 2 1k 2 5 100 2 5 1k 2 5 10k 2 Frequency, f -- Hz 400 Frequency, f -- Hz 5 100k 2 5 1M ITR10338 PD -- Ta [FET] Allowable Power Dissipation, PD -- mW 350 M 300 250 200 150 100 50 0 0 20 40 ou nt ed on ac er am ic bo ar d (6 00 m m2 ✕ 0. 8m m ) 160 60 80 100 120 140 Ambient Temperature, Ta -- °C 50 IT09862 IC -- VCE 50 0μ A μA 450 [TR] 12 IC -- VCE 50μA 45μA [TR] A 4 0 0μ 350μA 300μA Collector Current, IC -- mA 250μA 200μA 150μA Collector Current, IC -- mA 40 10 8 30 6 40μA 35μA 30μA 25μA 20μA 15μA 10μA 5μA 20 100μA 4 10 50μA 2 0 0 0.2 0.4 0.6 IB=0μA 0.8 1.0 ITR10340 0 0 10 20 30 IB=0μA 40 50 ITR10341 Collector-to-Emitter Voltage, VCE -- V 160 140 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 2 [TR] VCE=6V hFE -- IC [TR] VCE=6V 1000 Collector Current, IC -- mA DC Current Gain, hFE 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 7 5 3 2 Ta=75°C 25°C --25°C Ta=75°C 25°C --25°C 100 7 5 3 0.1 2 3 5 1.0 2 3 5 10 2 3 5 Base-to-Emitter Voltage, VBE -- V ITR10342 Collector Current, IC -- mA 100 2 3 ITR10343 No.8278-4/6 CPH5901 7 f T -- IC [TR] VCE=6V 5 Cib -- VEB [TR] f=1MHz Gain-Bandwidth Product, f T -- MHz 5 3 Input Capacitance, Cib -- pF 3 2 2 10 7 5 100 7 5 3 2 3 2 1.0 1.0 2 3 5 7 10 2 3 5 7 Collector Current, IC -- mA 3 2 2 100 ITR10344 5 7 1.0 2 3 5 Emitter-to-Base Voltage, VEB -- V 3 2 7 10 ITR10345 Cob -- VCB [TR] f=1MHz VCE(sat) -- IC [TR] IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 1.0 7 5 3 2 10 7 5 3 2 0.1 7 5 3 1.0 7 5 5 7 1.0 2 3 5 7 10 2 3 5 100 ITR10346 7 75°C Ta= °C --25 2 3 5 7 10 2 3 5 25 °C 2 1.0 7 Collector-to-Base Voltage, VCB -- V 10 7 VBE(sat) -- IC Collector Current, IC -- mA 400 350 2 100 ITR10347 [TR] IC / IB=10 PC -- Ta [TR] Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector Dissipation, PC -- mW 5 M 300 250 200 150 100 50 0 ou nt 3 2 ed on ac er am ic bo ar d 1.0 7 5 3 1.0 (6 Ta= --25°C 00 m m2 ✕ 75°C 25°C 0. 8m m ) 160 2 3 5 7 10 2 3 5 7 Collector Current, IC -- mA 2 100 ITR10348 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C IT09863 No.8278-5/6 CPH5901 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8278-6/6