CPH5902

Ordering number : ENN6962A CPH5902 CPH5902 Features • NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly. The CPH5902 contains a 2SK2394-equivalent chip and a 2SC4639-equivalent chip in one package. Drain and emitter are shared. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [FET] Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation [Common Ratings] Total Dissipation Junction Temperature Storage Temperature PT Tj Tstg 500 150 --55 to +150 mW °C °C VCBO VCEO VEBO IC ICP IB PC 55 50 6 150 300 30 350 V V V mA mA mA mW VDSX VGDS IG ID PD 15 --15 10 50 350 V V mA mA mW Symbol Conditions Ratings Unit Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN GI IM 22004 TS IM TA-101143 / 52501 TS IM TA-3247 No.6962-1/6 CPH5902 Electrical Characteristics at Ta=25°C Parameter [FET] Gate-to-Drain Breakdown Voltage` Gate Cutoff Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Noise Figure [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Marking : RB ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCB=35V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=10mA VCB=6V, f=1MHz IC=50mA, IB=5mA IC=50mA, IB=5mA IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit 55 50 6 0.15 0.75 0.20 135 200 1.7 0.08 0.8 0.4 1.0 0.1 0.1 400 MHz pF V V V V V µs µs µs µA µA V(BR)GDS IGSS VGS(off) IDSS yfs Ciss Crss NF IG=- µA, VDS=0 -10 VGS=--10V, VDS=0 VDS=5V, ID=100µA VDS=5V, VGS=0 VDS=5V, VGS=0, f=1kHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz --15 --1.0 --0.4 10.0* 24 38 10.0 2.9 1.0 --0.7 --1.5 32.0* V nA V mA mS pF pF dB Symbol Conditions Ratings min typ max Unit * : The CPH5902 is classified by IDSS as follows : (unit : mA) Rank G H IDSS 10.0 to 20.0 16.0 to 32.0 The specifications shown above are for each individual FET or transistor. Package Dimensions unit : mmm 2196 Electrical Connection 5 4 3 2.9 5 4 3 0.6 1.6 2.8 0.05 1 2 0.2 0.15 1 : Collector 2 : Gate 3 : Source 4 : Emitter / Drain 5 : Base Top view 1 0.95 2 0.4 0.6 1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base SANYO : CPH5 0.2 0.4 0.7 0.9 No.6962-2/6 CPH5902 Switching Time Test Circuit PC=20µs D.C.≤1% INPUT 50Ω IB1 OUTPUT IB2 1kΩ VR + 220µF VBE= --5V + 470µF VCC=20V RL 2kΩ 10IB1= --10IB2=IC=10mA 20 ID -- VDS [FET] 20 ID -- VDS [FET] VGS=0 16 Drain Current, ID -- mA Drain Current, ID -- mA VGS=0 --0.1V --0.2V 16 --0.1V 12 12 --0.2V 8 8 --0.3V --0.3V 4 --0.4V --0.7V --0.5V --0.4V 4 0 0 0.4 0.8 --0.6V 1.2 1.6 2.0 ITR10364 --0.7V 0 0 2 4 6 8 --0.5V --0.6V 10 ITR10365 Drain-to-Source Voltage, VDS -- V 22 20 18 ID -- VGS Drain-to-Source Voltage, VDS -- V 16 14 [FET] ID -- VGS [FET] VDS=5V VDS=5V IDSS=15mA Drain Current, ID -- mA Drain Current, ID -- mA 16 14 12 10 12 10 8 6 4 2 0 --1.2 A 0m S =2 mA --2 5 Ta = --1.0 --0.8 --0.6 8 6 4 2 0 --1.4 --1.2 --1.0 --0.8 --0.6 °C ID S 15 10 m --0.4 --0.2 0 25 --0.4 °C 75° --0.2 A C 0 Gate-to-Source Voltage, VGS -- V 7 yfs -- ID IT03287 Gate-to-Source Voltage, VGS -- V 100 [FET] yfs -- IDSS ITR10367 [FET] Forward Transfer Admittance, yfs -- mS 5 3 2 m =15 I DSS A 30m A Forward Transfer Admittance, yfs -- mS VDS=5V f=1kHz 7 VDS=5V VGS=0 f=1kHz 5 10 7 5 3 2 3 2 3 5 7 1.0 2 3 5 7 10 2 3 5 10 7 10 2 3 5 IT03289 Drain Current, ID -- mA IT03288 Drain Current, IDSS -- mA No.6962-3/6 CPH5902 2 VGS(off) -- IDSS [FET] 3 Ciss -- VDS [FET] VDS=5V ID=100µA Cutoff Voltage, VGS(off) -- V --1.0 7 5 2 VGS=0 f=1MHz Input Capacitance, Ciss -- pF 7 2 3 5 IT03290 10 7 5 3 3 2 2 --0.1 10 1.0 7 1.0 2 3 5 7 10 2 3 Drain Current, IDSS -- mA 10 Drain-to-Source Voltage, VDS -- V 10 ITR10371 Crss -- VDS [FET] NF -- f [FET] Reverse Transfer Capacitance, Crss -- pF 7 5 VGS=0 f=1MHz 8 VDS=5V ID=1mA Rg=1kΩ Noise Figure, NF -- dB 3 6 2 4 1.0 7 5 7 1.0 2 3 5 7 10 2 3 2 0 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 Drain-to-Source Voltage, VDS -- V 10 ITR10372 Frequency, f -- kHz 400 5 7100 ITR10373 NF -- Rg Allowable Power Dissipation, PD -- mW 8 [FET] VDS=5V ID=1mA f=1kHz PD -- Ta [FET] 350 300 Noise Figure, NF -- dB 6 200 4 100 2 0 0.1 23 5 7 1.0 23 Signal Source Resistance, Rg -- kΩ 5 7 10 23 5 7 100 23 5 71000 ITR10374 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 12 IT07500 50 IC -- VCE 50 0µ A µ 450 A [TR] 350µA 300µA 250µA IC -- VCE 50µA 45µA 40µA 35µA [TR] A 400µ Collector Current, IC -- mA 200µA 30 Collector Current, IC -- mA 40 10 8 150µA 100µA 6 30µA 25µA 20µA 15µA 10µA 5µA IB=0 0 10 20 30 40 50 ITR10377 20 4 10 50µA IB=0 0 0.2 0.4 0.6 0.8 1.0 ITR10376 2 0 0 Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V No.6962-4/6 CPH5902 160 140 1000 IC -- VBE [TR] VCE=6V 2 hFE -- IC [TR] VCE=6V Collector Current, IC -- mA DC Current Gain, hFE 120 100 80 60 7 5 3 2 Ta=75°C 25°C --25°C Ta=75 °C 25°C --25°C 40 20 0 0 0.2 0.4 100 7 5 3 0.1 0.6 0.8 1.0 1.2 1.4 2 3 5 1.0 2 3 5 10 2 3 5 Base-to-Emitter Voltage, VBE -- V 7 ITR10378 Collector Current, IC -- mA 5 100 2 3 ITR10379 f T -- IC [TR] VCE=6V cib -- VEB [TR] f=1MHz Gain-Bandwidth Product, fT -- MHz 5 3 Input Capacitance, cib -- pF 2 3 5 7 2 3 5 7 2 100 ITR10380 3 2 2 10 7 5 100 7 5 3 2 3 2 1.0 1.0 10 5 7 1.0 2 3 5 Collector Current, IC -- mA 5 3 Cob -- VCB Emitter-to-Base Voltage, VEB -- V 3 7 10 ITR10381 [TR] f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V VCE(sat) -- IC [TR] IC / IB=10 2 1.0 7 5 3 2 0.1 7 5 3 Output Capacitance, Cob -- pF 2 10 7 5 3 2 1.0 7 5 5 7 1.0 2 3 5 7 10 2 3 5 100 ITR10382 7 5°C Ta=7 °C --25 2 3 5 7 10 2 3 25 °C 2 1.0 5 7 Collector-to-Base Voltage, VCB -- V 10 VBE(sat) -- IC Collector Current, IC -- mA 400 350 2 100 ITR10383 [TR] IC / IB=10 Collector Dissipation, PC -- mW PC -- Ta [TR] Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 5 300 3 2 200 1.0 7 5 3 1.0 Ta= --25°C 75°C 25°C 100 0 2 3 5 7 10 2 3 5 7 Collector Current, IC -- mA 2 100 ITR10384 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT07501 No.6962-5/6 CPH5902 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2004. Specifications and information herein are subject to change without notice. PS No.6962-6/6