CPH5905

Ordering number : ENN7177 CPH5905 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET CPH5905 High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications Features • Package Dimensions unit : mm 2196 [CPH5905] 2.9 5 4 3 0.6 0.2 • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly. The CPH5905 contains a 2SK3557-equivalent chip and a 2SC4639-equivalent chip in one package. Drain and emitter are shared. 0.15 1 0.95 2 0.4 0.6 1.6 2.8 0.05 1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base SANYO : CPH5 0.2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter [FET] Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation [Common Ratings] Total Dissipation Junction Temperature Storage Temperature PT Tj Tstg 300 150 --55 to +150 mW °C °C VCBO VCEO VEBO IC ICP IB PC 55 50 6 150 300 30 200 V V V mA mA mA mW VDSX VGDS IG ID PD 15 -15 10 50 200 V V mA mA mW Symbol Conditions Ratings Unit Marking : 1E Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22802 TS IM TA-3495 No.7177-1/5 0.7 0.9 CPH5905 Electrical Characteristics at Ta=25°C Parameter [FET] Gate-to-Drain Breakdown Voltage` Gate Cutoff Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Noise Figure [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Rank G ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf H VCB=35V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=10mA VCB=6V, f=1MHz IC=50mA, IB=5mA IC=50mA, IB=5mA IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 55 50 6 0.15 0.75 0.20 135 200 1.7 0.08 0.8 0.4 1.0 0.1 0.1 400 MHz pF V V V V V µs µs µs µA µA V(BR)GDS IGSS VGS(off) IDSS yfs Ciss Crss NF IG=- µA, VDS=0 -10 VGS=--10V, VDS=0 VDS=5V, ID=100µA VDS=5V, VGS=0 VDS=5V, VGS=0, f=1kHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz --15 --1.0 --0.4 10.0* 24 35 10.0 2.9 1.0 --0.7 --1.5 32.0* V nA V mA mS pF pF dB Symbol Conditions Ratings min typ max Unit * : The CPH5905 is classified by IDSS as follows : (unit : mA) IDSS 10.0 to 20.0 16.0 to 32.0 The specifications shown above are for each individual FET or a transistor. Electrical Connection (Top view) B E/D S Switching Time Test Circuit PC=20µs D.C.≤1% INPUT 50Ω IB1 OUTPUT IB2 1kΩ VR + 220µF VBE= --5V + 470µF VCC=20V RL 2kΩ C G 10IB1= --10IB2=IC=10mA 20 ID -- VDS [FET] 20 ID -- VDS VGS=0 [FET] 16 Drain Current, ID -- mA Drain Current, ID -- mA V GS=0 16 --0.1V 12 12 --0.1V --0.2V --0.2V 8 8 --0.3V --0.3V 4 --0.4V --0.7V 4 --0.4V --0.6V 1.2 --0.5V 0 1.6 2.0 2.4 ITR02749 0 2 --0.7V 4 6 --0.5V --0.6V 8 10 12 ITR02750 0 0 0.4 0.8 Drain-to-Source Voltage, VDS -- V Drain-to-Source Voltage, VDS -- V No.7177-2/5 CPH5905 22 20 18 ID -- VGS VDS=5V [FET] 16 14 ID -- VGS VDS=5V IDSS=15mA [FET] Drain Current, ID -- mA Drain Current, ID -- mA 16 14 12 10 8 6 4 12 10 8 6 4 2 ID SS = 30 mA 20 m 15 A mA 10 mA 25 °C --1.0 --0.8 --0.6 --0.4 2 0 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.2 IT04224 0 --1.2 --0.2 0 0.2 Gate-to-Source Voltage, VGS -- V 7 yfs -- ID Gate-to-Source Voltage, VGS -- V 100 25 °C Ta =-- 75° C [FET] yfs -- IDSS ITR02752 Forward Transfer Admittance, yfs -- mS 5 30m 3 2 A Forward Transfer Admittance, yfs -- mS VDS=5V f=1kHz =15 I DSS mA 7 [FET] VDS=5V VGS=0 f=1kHz 5 10 7 5 3 2 3 2 3 5 7 1.0 2 3 5 7 10 2 3 5 10 7 10 2 3 5 IT04226 Drain Current, ID -- mA 3 IT04225 Drain Current, IDSS -- mA 3 VGS(off) -- IDSS [FET] Ciss -- VDS [FET] VDS=5V ID=100µA Cutoff Voltage, VGS(off) -- V Input Capacitance, Ciss -- pF 2 2 VGS=0 f=1MHz 1.0 10 7 7 5 5 3 7 10 2 3 5 IT04227 3 7 1.0 2 3 5 7 10 2 3 Drain Current, IDSS -- mA 10 Drain-to-Source Voltage, VDS -- V 10 IT04228 Crss -- VDS Reverse Transfer Capacitance, Crss -- pF 7 5 [FET] VDS=0 f=1MHz NF -- f 8 [FET] VDS=5V ID=1mA Rg=1kΩ Noise Figure, NF -- dB 2 3 5 7 2 3 6 2 4 1.0 7 5 7 1.0 10 3 2 0 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 Drain-to-Source Voltage, VDS -- V IT04229 Frequency, f -- kHz 5 7100 ITR02758 No.7177-3/5 CPH5905 10 NF -- Rg [FET] Allowable Power Dissipation, PD -- mW 8 VDS=5V ID=1mA f=1kHz 240 PD -- Ta [FET] 200 Noise Figure, NF -- dB 160 6 120 4 80 2 40 0 0.1 23 5 7 1.0 23 Signal Source Resistance, Rg -- kΩ 5 7 10 23 5 7 100 23 5 71000 ITR02759 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 12 ITR02760 50 45 IC -- VCE 0µ A µA 450 [TR] 350µA 300µA 250µA IC -- VCE 50µA 45µA 40µA 35µA [TR] A 400µ 50 Collector Current, IC -- mA 35 30 25 20 15 10 5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 200µA Collector Current, IC -- mA 40 10 8 150µA 100µA 6 30µA 25µA 20µA 15µA 10µA 5µA IB=0 0 5 10 15 20 25 30 35 40 45 50 4 50µA IB=0 0.8 0.9 1.0 2 0 Collector-to-Emitter Voltage, VCE -- V 160 140 ITR10376 Collector-to-Emitter Voltage, VCE -- V 2 ITR10377 IC -- VBE [TR] VCE=6V hFE -- IC [TR] VCE=6V 1000 Collector Current, IC -- mA DC Current Gain, hFE 120 100 80 60 7 5 3 2 Ta=75°C 25°C --25°C Ta=75 °C 25°C --25°C 40 20 0 0 0.2 0.4 100 7 5 3 0.1 0.6 0.8 1.0 1.2 1.4 2 3 5 1.0 2 3 5 10 2 3 5 Base-to-Emitter Voltage, VBE -- V 7 ITR10378 Collector Current, IC -- mA 5 100 2 3 ITR10379 f T -- IC [TR] VCE=6V Input Capacitance, Cib -- pF Cib -- VEB [TR] f=1MHz Gain-Bandwidth Product, fT -- MHz 5 3 3 2 2 10 7 5 100 7 5 3 2 3 2 1.0 1.0 2 3 5 7 10 2 3 5 7 Collector Current, IC -- mA 2 100 ITR10380 5 7 1.0 2 3 5 Emitter-to-Base Voltage, VEB -- V 7 10 ITR10381 No.7177-4/5 CPH5905 5 3 Cob -- VCB [TR] f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 1.0 7 5 3 2 0.1 7 5 3 VCE(sat) -- IC [TR] IC / IB=10 Output Capacitance, Cob -- pF 2 10 7 5 3 2 1.0 7 5 5 7 1.0 2 3 5 7 10 2 3 5 100 ITR10382 7 5°C Ta=7 °C --25 2 3 5 7 10 2 3 25 °C 2 1.0 5 7 Collector-to-Base Voltage, VCB -- V 10 VBE(sat) -- IC Collector Current, IC -- mA 250 2 100 ITR10383 [TR] IC / IB=10 Collector Dissipation, PC -- mW PC -- Ta [TR] Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 5 200 3 2 150 100 1.0 7 5 3 1.0 Ta= --25°C 75°C 25°C 50 0 2 3 5 7 10 2 3 5 7 Collector Current, IC -- mA 2 100 ITR10384 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C ITR10385 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2002. Specifications and information herein are subject to change without notice. PS No.7177-5/5