CPH6122_06

Ordering number : EN7225A CPH6122 SANYO Semiconductors DATA SHEET CPH6122 Applications • PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Bass Voltage Collector Current Collector Current (Pulse) Bass Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on ceramic board (600mm2×0.8mm) Conditions Ratings -30 -30 --5 --3 --5 --600 1.3 150 --55 to +150 Unit V V V A A mA W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=-30V, IE=0A VEB=-4V, IC=0A VCE=-2V, IC=--500mA VCE=-10V, IC=--500mA VCB=-10V, f=1MHz Ratings min typ max --0.1 --0.1 200 400 25 560 MHz pF Unit µA µA Marking : AW Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1106EA SY IM / 72602 TS IM TA-100026 No.7225-1/4 CPH6122 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Bass Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=--1.5A, IB=--30mA IC=--1.5A, IB=--75mA IC=--1.5A, IB=--30mA IC=--10µA, IE=0A IC=--1mA, RBE=∞ IE=--10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --30 --30 --5 50 270 27 Ratings min typ --180 --120 --0.83 max --270 --180 --1.2 Unit mV mV V V V V ns ns ns Package Dimensions unit : mm (typ) 7018A-002 0.6 2.9 0.15 Switching Time Test Circuit 6 5 4 0.2 PW=20µs D.C.≤1% INPUT VR 50Ω IB1 IB2 RB OUTPUT 2.8 1.6 0.05 24Ω + 470µF VCC= --12V + 0.6 1 2 0.95 3 0.4 100µF 1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector SANYO : CPH6 VBE=5V 0.2 --20IB1=20IB2=IC= --500mA 0.9 --2.0 IC -- VCE mA 0m --3.0 IC -- VBE VCE= --2V --4 0 --3 --1.8 0 --2 mA A --10mA Collector Current, IC -- A Collector Current, IC -- A --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --50m A --1.6 --8mA --6mA --4mA --2.5 --2.0 --2mA --1.0 --0.5 IB=0mA --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 IT04555 Collector-to-Emitter Voltage, VCE -- V 1000 7 5 IT04554 5 hFE -- IC Bass-to-Emitter Voltage, VBE -- V fT -- IC VCE= --2V Gain-Bandwidth Product, FT -- MHz Ta=75°C 25°C --25°C DC Current Gain, hFE 3 2 3 100 7 5 3 2 2 100 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --10 IT04556 7 --0.01 2 3 5 7 --0.1 2 3 5 Ta=75 °C 25°C --25°C --1.5 VCE= --10V 7 --1.0 2 3 5 Collector Current, IC -- A IT04557 No.7225-2/4 CPH6122 100 Cob -- VCB f=1MHz --1000 7 VCB(sat) -- IC IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Output Capacitance, Cob -- pF 7 5 3 2 5 3 --100 5 3 2 2 10 --1.0 --10 Collector-to-Base Voltage, VCB -- V 2 3 5 7 2 3 --10 --0.01 2 3 5 7 --0.1 25 °C 7 = Ta °C 75 C 5° --2 2 3 5 7 --1.0 2 3 57 IT04559 IT04558 2 3 2 VCE(sat) -- IC Collector Current, IC -- A VBE(sat) -- IC IC / IB=50 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1000 7 5 3 2 --100 7 5 3 2 --10 --0.01 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 25° C --1.0 C 75° Ta= 5°C --2 7 °C Ta= --25 °C 25 75°C 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --10 IT04560 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 ASO Collector Current, IC -- A 1.4 1.3 1.2 IT04561 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 PC -- Ta Collector Dissipation, PC -- W ICP= --5A IC= --3A