CPH6314_05

Ordering number : ENN8236 CPH6314 CPH6314 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. High-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Conditions Ratings --30 ±20 --4 --16 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0 VDS=-30V, VGS=0 VGS=±16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-2A ID=--2A, VGS=-10V ID=--1A, VGS=-4.5V ID=--1A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --30 --1 ±10 --1.2 2.5 3.6 53 92 105 510 115 78 11 20 40 32 69 129 147 --2.6 typ max Unit V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns Marking : JQ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22805PE TS IM TB-00001170 No.8236-1/4 CPH6314 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--10V, VGS=-10V, ID=--4A VDS=--10V, VGS=-10V, ID=--4A VDS=--10V, VGS=-10V, ID=--4A IS=--4A, VGS=0 Ratings min typ 11 2.4 1.7 --0.86 --1.2 max Unit nC nC nC V Package Dimensions unit : mm 2151B 0.4 6 5 4 0.6 0.2 Switching Time Test Circuit 0.15 VIN 0V --10V VIN PW=10µs D.C.≤1% VDD= --15V 1.6 2.8 0.05 ID= --2A RL=7.5Ω D VOUT 0.6 1 0.95 2 2.9 3 0.7 0.9 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 G 0.2 CPH6314 P.G 50Ω S --10. 0V --8.0 --6.0 V V --4. --4. 0V 5V --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 --0.1 ID -- VDS -V 3.5 Drain Current, ID -- A --6 ID -- VGS VDS= --10V --5 Drain Current, ID -- A --4 --3.0V --3 --2 --1 VGS= --2.5V 0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 25°C --3.5 Ta=75 °C --25°C --4.0 --4.5 --5.0 Drain-to-Source Voltage, VDS -- V 300 IT04492 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 200 IT04493 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 150 200 ID= --1A 150 --2A 100 100 .0V = --4 , VGS --1A .5V I D= = --4 , VGS --1A V I D= --10.0 S= --2A, V G I D= 50 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT04494 Ambient Temperature, Ta -- °C IT04495 No.8236-2/4 CPH6314 2 yfs -- ID VDS= --10V 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 10 3 2 1.0 7 5 3 2 0.1 7 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 = Ta --2 5°C C °C 25° 75 Forward Current, IF -- A 7 5 --0.01 7 5 3 2 --0.001 0 --0.2 --0.4 Ta= 75°C 25°C --25° C --0.6 --0.8 Drain Current, ID -- A 3 2 5 7 --10 IT04496 1000 7 --1.0 --1.2 IT04497 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V VDD= --15V VGS= --10V td (off) tf Switching Time, SW Time -- ns 100 5 3 2 10 7 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 7 5 0 --2 --4 --6 --8 Ciss, Coss, Crss -- pF 7 5 3 2 td(on) tr Coss 100 Crss --10 --12 --14 --16 --18 --20 Drain Current, ID -- A --10 --9 IT04500 3 2 --10 7 5 VGS -- Qg Drain-to-Source Voltage, VDS -- V IT04498 ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --4A Drain Current, ID -- A IDP= --16A ID= --4A DC 10 1m 10 ms