CPH6316

Ordering number : ENN7026 CPH6316 P-Channel Silicon MOSFET CPH6316 High-Speed Switching Applications Features • • • Package Dimensions unit : mm 2151A [CPH6316] 6 5 4 0.6 0.2 Low ON-resistance. High-speed switching. 4V drive. 2.9 0.15 0.05 1.6 2.8 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Conditions 0.7 0.9 0.2 3 0.95 0.6 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Ratings -30 ± 20 --3 -12 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0 VDS=-30V, VGS=0 VGS=± 16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--1A ID=--1A, VGS=-10V ID=--0.5A, VGS=-4V Ratings min --30 --1 ± 10 --1.2 1.4 2 115 210 150 295 --2.6 typ max Unit V µA µA V S mΩ mΩ Marking : JS Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92501 TS IM TA-3311 No.7026-1/4 CPH6316 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=--10V, ID=-3A VDS=--10V, VGS=--10V, ID=-3A VDS=--10V, VGS=--10V, ID=-3A IS=--3A, VGS=0 Ratings min typ 200 47 32 7.2 2.9 21 8.7 5.5 0.98 0.82 --0.86 --1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 0V --10V VIN PW=10µs D.C.≤1% ID= --1A RL=15Ω VDD= --15V D VOUT G CPH6316 P.G 50Ω S V --2.0 ID -- VDS V --10. 0 --5.0 --4.5 --4.0 ID -- VGS VDS=10V --6.0 --1.6 Drain Current, ID -- A --4. 0V . --3 --1.2 5V Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --0.8 VGS= --3.0V --0.4 --1.0 --0.5 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 Ta= 75° C 25 °C --25° C --3.0 --3.5 --1.5 --4.0 --4.5 Drain-to-Source Voltage, VDS -- V 400 IT03223 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 400 IT03224 RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 350 300 250 350 300 250 200 150 100 50 0 --60 --1.0A 200 I D= A, --0.5 = --4 VGS V ID= --0.5A 150 100 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 1.0A I D= -- = --10 , V GS V --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT03225 Ambient Temperature, Ta -- °C IT03226 No.7026-2/4 CPH6316 10 yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S 7 5 --10 7 5 3 IF -- VSD VGS=0 Forward Current, IF -- A 3 2 2 --1.0 7 5 3 2 --0.1 7 5 3 2 25 °C 1.0 7 5 3 2 -25 =Ta °C 75 °C Ta=7 5°C --0.3 --0.4 --0.5 --0.6 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 2 100 5 7 --10 IT03227 --0.01 --0.2 25°C --25°C --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 SW Time -- ID 3 2 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT03228 VDD= --15V VGS= --10V Ciss Switching Time, SW Time -- ns 7 5 3 2 10 7 5 3 2 1.0 --0.1 10 2 3 5 7 --1.0 2 3 5 IT03229 3 2 --10 7 5 0 --5 --10 --15 --20 --25 --30 IT03230 Ciss, Coss, Crss -- pF 100 7 5 td(off) td(on) tf Coss 3 2 Crss tr Drain Current, ID -- A --10 --9 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --3A IDP= --12A ID= --3A --8 Drain Current, ID -- A --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 IT03231 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 10 DC op er 10 1m m s