CPH6328

5Ordering number : ENN7530 CPH6328 P-Channel Silicon MOSFET CPH6328 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2151A [CPH6328] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions 0.7 0.9 0.2 3 0.95 0.6 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Ratings --100 ±20 --1.6 --6.4 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0 VDS=-100V, VGS=0 VGS=±16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--0.8A ID=--0.8A, VGS=-10V ID=--0.8A, VGS=-4V Ratings min --100 --1 ±10 --1.2 1.5 2.3 410 530 530 730 --2.6 typ max Unit V µA µA V S mΩ mΩ Marking : YE Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22004 TS IM TA-100351 No.7530-1/4 CPH6328 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--50V, VGS=-10V, ID=-1.6A VDS=--50V, VGS=-10V, ID=-1.6A VDS=--50V, VGS=-10V, ID=-1.6A IS=--1.6A, VGS=0 Ratings min typ 535 43 31 9 5 62 34 11 2.6 2 --0.83 --1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VDD= --50V 0V --10V VIN VIN ID= --0.8A RL=62.5Ω PW=10µs D.C.≤1% D G VOUT P.G 50Ω S CPH6328 --2.0 ID -- VDS --6 . 0V --3.0 ID -- VGS VDS= --10V --1.8 --1.6 0V .0V - --4. -3 .5V 0V --2.5 --8. Drain Current, ID -- A V --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.2 Drain Current, ID -- A --10 --2.0 --5 VGS= --3.0V --1.5 --1.0 5°C 75°C --0.5 0 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 --1 --2 --3 --4 --5 IT06007 Drain-to-Source Voltage, VDS -- V 800 IT06006 800 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 750 700 650 600 550 500 450 400 350 300 0 --2 --4 --6 --8 --10 --12 --14 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C ID= --0.8A 750 700 650 600 550 500 450 400 350 300 250 -0. =ID 8A Ta= 2 ,V V --4 S= G -I D= 0.8 A, = -V GS --16 --18 --20 200 --60 --40 --20 0 20 40 60 --25° C 10V 80 100 120 140 Gate-to-Source Voltage, VGS -- V IT06008 Ambient Temperature, Ta -- °C IT06009 No.7530-2/4 CPH6328 10 yfs -- ID VDS= --10V Forward Transfer Admittance, yfs -- S 7 5 3 2 --10 7 5 3 2 --1.0 7 5 IF -- VSD VGS=0 =-Ta 1.0 7 5 3 2 25 °C 75 °C Forward Current, IF -- A --0.1 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 --0.01 --0.3 --0.4 --0.5 --0.6 Ta= 7 C 25° --0.7 --25 °C --0.8 5 °C 25° C 3 2 --0.9 --1.0 IT06011 Drain Current, ID -- A 100 7 IT06010 1000 7 5 SW Time -- ID td(off) Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 Ciss, Coss, Crss -- pF 3 2 tf 3 2 10 7 5 3 2 td(on) tr 100 7 5 3 Coss Crss 1.0 --0.1 VDD= --50V VGS= --10V 2 3 5 7 --1.0 2 3 2 10 0 --5 --10 --15 --20 --25 --30 IT06013 Drain Current, ID -- A --10 --9 5 IT06012 2 --10 7 5 Drain-to-Source Voltage, VDS -- V VGS -- Qg ASO IDP= --6.4A ID= --1.6A ≤10µs 10 0 1m µs s Gate-to-Source Voltage, VGS -- V VDS= --50V ID= --1.6A --8 --7 --6 --5 --4 --3 --2 --1 0 0 2 4 6 8 10 12 IT06014 Drain Current, ID -- A 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 10 10 DC Operation in this area is limited by RDS(on). ms 0m s op era tio n --0.01 --0.1 Ta=25°C Single pulse Mounted on a ceramic board(900mm2!0.8mm) 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 Total Gate Charge, Qg -- nC 2.0 Drain-to-Source Voltage, VDS -- V IT06015 PD -- Ta Allowable Power Dissipation, PD -- W 1.8 1.6 M 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 ou nte do na ce ram ic bo ard (9 00 mm 2 !0 .8m m) 160 60 80 100 120 140 Ambient Temperature, Ta -- °C IT06016 No.7530-3/4 CPH6328 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2004. Specifications and information herein are subject to change without notice. PS No.7530-4/4