CPH6350

Ordering number : ENA1529 CPH6350 SANYO Semiconductors DATA SHEET CPH6350 Features • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications 4V drive. Low ON-resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --30 ±20 -6 --24 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=- 1mA, VGS=0V VDS=- 30V, VGS=0V VGS=±16V, VDS=0V VDS=- 10V, ID=- 1mA VDS=- 10V, ID=- 3A ID=- 3A, VGS=- 10V ID=- 1.5A, VGS=- 4.5V ID=- 1.5A, VGS=- 4V --1.2 5.4 33 58 61 43 82 86 Ratings min --30 -1 ±10 --2.6 typ max Unit V μA μA V S mΩ mΩ mΩ Marking : XC Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 80509PE TK IM TC-00002052 No. A1529-1/4 CPH6350 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--6A VDS=--15V, VGS=--10V, ID=--6A VDS=--15V, VGS=--10V, ID=--6A IS=--6A, VGS=0V Ratings min typ 600 145 110 7.4 27 62 45 13 1.8 3.2 --0.87 --1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7018A-003 Switching Time Test Circuit VIN VDD= --15V 0V --10V 2.9 0.6 6 5 4 0.2 0.15 VIN PW=10μs D.C.≤1% G D ID= --3A RL=5Ω VOUT 2.8 1.6 0.05 0.6 1 2 0.95 3 0.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 P.G 50Ω S CPH6350 0.9 0.2 --10.0V --4.0V V --3. 5V --3.0 ID -- VDS .0 V --3 --9 ID -- VGS VDS= --10V --8 --7 --2.5 --18.0V V -4.5 Drain Current, ID -- A --2.0 Drain Current, ID -- A --6 --5 --4 --3 --1.5 --1.0 --6.0 VGS= --2.5V 5°C Ta= 7 0 --0.5 --1.0 --1.5 --2.0 --2.5 --2 --0.5 --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --25 --3.0 °C 25° C --3.5 --4.0 Drain-to-Source Voltage, VDS -- V IT14855 Gate-to-Source Voltage, VGS -- V IT14856 No. A1529-2/4 CPH6350 200 RDS(on) -- VGS Ta=25°C ID= --1.5A --3.0A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 100 90 80 70 60 50 40 30 20 10 --60 --40 --20 0 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 180 160 140 120 100 80 60 40 20 0 0 --2 --4 --6 --8 --10 --12 = -V GS 4.0 = -V, I D 1.5 A = -V GS 4 1.5 = -, ID .5V A = VGS = --3 0V, I D --10. .0A --14 --16 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 2 | yfs | -- ID IT14857 2 Ambient Temperature, Ta -- °C IS -- VSD IT14858 Forward Transfer Admittance, | yfs | -- S VDS= --10V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 --0.01 Source Current, IS -- A --10 7 5 3 2 --1.0 7 5 3 2 VGS=0V 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 57 IT14859 --0.01 7 5 3 2 --0.001 --0.2 --0.4 Ta= 7 --0.6 --25 ° --0.8 5°C --2 a= T °C 75 5°C --0.1 7 5 3 2 25°C C 25 °C --1.0 --1.2 IT14860 Drain Current, ID -- A 100 7 SW Time -- ID td(off) tf 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V f=1MHz Switching Time, SW Time -- ns 5 1000 Ciss, Coss, Crss -- pF 7 5 3 2 3 2 Ciss tr 10 7 5 3 --0.1 td(on) VDD= --15V VGS= --10V 2 3 5 7 --1.0 2 3 5 100 7 5 0 --5 --10 Coss Crss Drain Current, ID -- A --10 --9 VGS -- Qg 7 --10 2 IT14861 --15 --20 --25 --30 IT14862 Drain-to-Source Voltage, VDS -- V 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --6A Drain Current, ID -- A IDP= --24A ID= --6A --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 DC 10 op er ati 10 PW≤10μs 10 0 1m μs s m s 0m s on Operation in this area is limited by RDS(on). (T a= 25 °C ) --0.01 --0.01 2 3 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 5 7--0.1 23 5 7--1.0 23 5 7 --10 23 57 Total Gate Charge, Qg -- nC IT14863 Drain-to-Source Voltage, VDS -- V IT14864 No. A1529-3/4 CPH6350 2.0 PD -- Ta When mounted on ceramic substrate (900mm2×0.8mm) Allowable Power Dissipation, PD -- W 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT14865 Note on usage : Since the CPH6350 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2009. Specifications and information herein are subject to change without notice. PS No. A1529-4/4