CPH6354

Ordering number : ENA1946 CPH6354 SANYO Semiconductors DATA SHEET CPH6354 Features • • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=77mΩ(typ.) 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1500mm2×0.8mm) Conditions Ratings --60 ±20 -4 --16 1.6 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7018A-003 2.9 0.6 6 5 4 0.2 0.15 Product & Package Information • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL 0.05 Marking LOT No. 2.8 1.6 0.6 1 2 0.95 3 0.4 TL 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 0.2 Electrical Connection 1, 2, 5, 6 0.9 3 4 http://semicon.sanyo.com/en/network N0211PE TKIM TC-00002651 No. A1946-1/4 XE CPH6354 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=--4A, VGS=0V VDS=--30V, VGS=--10V, ID=--4A See specified Test Circuit. VDS=--20V, f=1MHz Conditions ID=- 1mA, VGS=0V VDS=- 60V, VGS=0V VGS=±16V, VDS=0V VDS=- 10V, ID=- 1mA VDS=- 10V, ID=- 2A ID=- 2A, VGS=- 10V ID=- 1A, VGS=- 4.5V ID=- 1A, VGS=- 4V Ratings min --60 -1 ±10 --1.2 4.8 77 96 103 600 60 50 5.8 12 78 40 14 1.6 3.4 --0.84 --1.2 100 135 145 --2.6 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 0V --10V VIN VDD= --30V ID= --2A RL=15Ω D VOUT VIN PW=10μs D.C.≤1% G CPH6354 P.G 50Ω S --6.0 V --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 ID -- VDS --4 .0 --8 ID -- VGS VDS= --10V . --3 0V --7 --6 --5 --4 --3 --2 --1 0 --10 .0 V Drain Current, ID -- A --4 . 5V V VGS= --2.5V Drain Current, ID -- A --16 .0 V 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --1 --2 Ta=7 5°C 25° --25° C C --3 --4 --5 --6 IT16615 Drain-to-Source Voltage, VDS -- V IT16614 Gate-to-Source Voltage, VGS -- V No. A1946-2/4 CPH6354 220 RDS(on) -- VGS Ta=25°C ID= --1A --2A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 300 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 180 160 140 120 100 80 60 40 20 0 0 --2 --4 --6 --8 --10 --12 250 200 150 = -VGS = -, ID 4.5V 1A 100 .0 = --4 VGS = --1 V, I D A A 50 = VGS = --2 0V, I D --10. --14 --16 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 | yfs | -- ID IT16616 --10 7 5 3 2 --1.0 7 5 Ambient Temperature, Ta -- °C IS -- VSD IT16617 Forward Transfer Admittance, | yfs | -- S 7 5 VDS= --10V VGS=0V 2 1.0 7 5 3 2 0.1 --0.01 = Ta --2 C 5° °C 75 Source Current, IS -- A 3 Ta=7 5°C 25°C 0 --0.2 --0.4 --0.6 --0.1 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 100 7 5 7 --10 IT16618 --0.01 --25°C --0.8 25 °C 3 2 --1.0 --1.2 IT16619 SW Time -- ID td(off) tf 1000 7 5 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V f=1MHz Switching Time, SW Time -- ns 5 Ciss, Coss, Crss -- pF 3 2 3 2 10 7 5 3 2 1.0 --0.1 tr 100 7 5 3 2 td(on) Coss Crss VDD= --30V VGS= --10V 2 3 5 7 --1.0 2 3 5 7 --10 10 0 --10 --20 --30 --40 --50 --60 IT16621 Drain Current, ID -- A --10 --9 VGS -- Qg IT16620 --100 7 5 3 2 Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS= --30V ID= --4A --8 --7 --6 --5 --4 --3 --2 --1 0 0 2 4 6 8 10 12 14 16 IDP= --16A (PW≤10μs) 10 Drain Current, ID -- A --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --4A DC op er 0μ 10 10 ati on 0m ms s 1m s s (T a= Operation in this area is limited by RDS(on). 25 °C ) --0.01 --0.01 2 3 Ta=25°C Single pulse When mounted on ceramic substrate (1500mm2×0.8mm) 5 7--0.1 23 5 7--1.0 2 3 5 7--10 23 Total Gate Charge, Qg -- nC IT16622 Drain-to-Source Voltage, VDS -- V 57 --100 IT16623 No. A1946-3/4 CPH6354 1.8 PD -- Ta When mounted on ceramic substrate (1500mm2×0.8mm) Allowable Power Dissipation, PD -- W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 IT16624 Ambient Temperature, Ta -- °C Note on usage : Since the CPH6354 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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