CPH6405

Ordering number : ENN7369 CPH6405 N-Channel Silicon MOSFET CPH6405 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2151A [CPH6405] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-state resistance. Ultrahigh-speed switching. 2.5V drive. 1 2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions 0.7 0.9 0.2 3 0.95 0.6 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Ratings 30 ±10 6 24 1.6 Unit V V A A W 150 --55 to +150 °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=3A ID=3A, VGS=4V ID=1A, VGS=2.5V Ratings min 30 1 ±10 0.4 6.3 9 33 43 43 61 1.3 typ max Unit V µA µA V S mΩ mΩ Marking : KE Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32603 TS IM TA-1932 No.7369-1/4 CPH6405 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=6A VDS=10V, VGS=10V, ID=6A VDS=10V, VGS=10V, ID=6A IS=6A, VGS=0 Ratings min typ 560 120 70 12 135 50 110 24 1.5 3.2 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 4V 0V VIN PW=10µs D.C.≤1% ID=3A RL=5Ω VDD=15V D VOUT G CPH6405 P.G 50Ω S 12 ID -- VDS 3.0V 2.0 V 12 ID -- VGS VDS=10V 25° C Drain Current, ID -- A 3.5V 10 10 Drain Current, ID -- A 2.5V 4.0V --25 ° = Ta 0 0.2 0.4 0.6 0.8 1.0 1.2 8 8 6 6 1.5V 4 2 0 0 VGS=1.0V 0.5 1.0 1.5 2.0 2.5 3.0 IT05419 0 1.4 1.6 1.8 2.0 Drain-to-Source Voltage, VDS -- V 60 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 70 --2 5° C 2 °C 75 25 °C 4 RDS(on) -- Tc Tc=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 50 60 ID=1A 40 3A 50 40 30 , V 1A 4.0 I D= S= , VG 3A I D= =2. V GS 5V 30 20 20 10 0 2 4 6 8 10 IT05421 10 --50 --25 0 25 50 75 100 Ta= IT05420 125 IT05422 Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- °C No.7369-2/4 75 °C C CPH6405 3 yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IF -- VSD VGS=0 2 10 7 5 Tc =7 3 2 1.0 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 5 3 7 10 IT05423 0.01 7 5 3 2 0.001 0.3 0.4 0.5 0.6 --25 0.7 0.8 C 75° 25° °C Tc 5°C C 25° C ° -25 =- C Forward Current, IF -- A 0.9 1.0 1.1 SW Time -- ID VDD=10V VGS=4V 2 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT05424 Switching Time, SW Time -- ns 2 1000 Ciss, Coss, Crss -- pF 7 5 3 2 Ciss 100 7 5 3 2 td(off) tf tr Coss 100 7 5 3 td(on) 10 7 5 0.1 Crss 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 10 10 IT05425 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 7 0 5 10 15 20 25 30 IT05426 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=6A 8 IDP=24A ID=6A Drain Current, ID -- A 6 DC 10 10