CPH6443

Ordering number : ENA1826 CPH6443 SANYO Semiconductors DATA SHEET CPH6443 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=28mΩ(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Conditions Ratings 35 ±20 6 24 1.6 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7018A-003 2.9 0.6 6 5 4 0.2 0.15 Product & Package Information • Package : CPH6 • JEITA, JEDEC : SC-96, SC-95, SOT346, SOT457 • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL 0.05 Marking 2.8 1.6 ZV TL 0.6 1 2 0.95 3 0.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 0.2 Electrical Connection 1, 2, 5, 6 0.9 3 4 http://semicon.sanyo.com/en/network O1310PE TKIM TC-00002507 No. A1826-1/4 LOT No. CPH6443 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=1mA, VGS=0V VDS=35V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3A ID=3A, VGS=10V ID=1.5A, VGS=4.5V ID=1.5A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=20V, VGS=10V, ID=6A VDS=20V, VGS=10V, ID=6A VDS=20V, VGS=10V, ID=6A IS=6A, VGS=0V Ratings min 35 1 ±10 1.2 2.9 28 43 52 470 70 35 8 17 32 22 10 2 2 0.84 1.2 37 61 73 2.6 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 10V 0V VIN VDD=20V ID=3A RL=6.7Ω D VOUT VIN PW=10μs D.C.≤1% G CPH6443 P.G 50Ω S 6.0V 4.5V 4.0 V 8.0V 6 ID -- VDS 16.0V 10.0V 6 ID -- VGS VDS=10V 5 V 3.5 Ta=25°C 5 Drain Current, ID -- A 4 Drain Current, ID -- A =3.0V VGS 4 3 3 Ta=7 5°C 0 0.5 1.0 1.5 2.0 2.5 2 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 25° C 3.0 3.5 1 1 --25°C 4.0 Drain-to-Source Voltage, VDS -- V IT14971 Gate-to-Source Voltage, VGS -- V IT14972 No. A1826-2/4 CPH6443 100 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=1.5A 100 90 80 70 60 50 40 30 20 10 0 --60 --40 --20 0 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16 3A 1.5A I D= .0V, A =4 =1.5 VGS V, I D =4.5 VGS =3A V, I D =10.0 VGS 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 2 3 5 70.01 23 5 7 0.1 23 5 7 1.0 23 | yfs | -- ID IT15933 10 7 5 3 2 Ambient Temperature, Ta -- °C IS -- VSD IT15934 Forward Transfer Admittance, | yfs | -- S VDS=10V VGS=0V = Ta -- °C 25 75 °C Source Current, IS -- A 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 0.2 25 °C Drain Current, ID -- A 100 7 SW Time -- ID 5 7 10 IT14975 0.001 0.4 Ta= 7 0.6 --25°C 0.8 5°C 25°C 1.0 1.2 IT14976 VDD=20V VGS=10V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V f=1MHz Switching Time, SW Time -- ns 5 td(off) 3 2 tf 100 10 7 5 3 2 0.1 2 3 5 7 1.0 tr td(on) 7 5 3 2 10 Coss Crss 2 3 5 7 10 0 5 10 15 20 25 30 35 IT14978 Drain Current, ID -- A 10 9 VGS -- Qg IT14977 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS=20V ID=6A Drain Current, ID -- A IDP=24A (PW≤10μs) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 ID=6A 10 10 μs 10 0μ 1m s s ms DC op Operation in this area is limited by RDS(on). era tio 0m s n( Ta =2 5°C ) 10 0.01 0.1 Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Total Gate Charge, Qg -- nC IT14979 Drain-to-Source Voltage, VDS -- V IT15935 No. A1826-3/4 CPH6443 1.8 PD -- Ta When mounted on ceramic substrate (1200mm2×0.8mm) Allowable Power Dissipation, PD -- W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT15936 Note on usage : Since the CPH6443 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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