CPH6621

Ordering number : ENA0847 CPH6621 SANYO Semiconductors DATA SHEET CPH6621 Features • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions Ratings --20 ±10 --1.5 --6.0 0.9 1.2 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=--1mA, VGS=0V VDS=-20V, VGS=0V VGS=±8V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-0.8A ID=--0.8A, VGS=-4V ID=--0.4A, VGS=-2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz Ratings min --20 --1 ±10 --0.4 1.38 2.3 180 240 290 40 25 235 340 --1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : WH Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60607PE TI IMTC-00000748 No. A0847-1/4 CPH6621 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-4V, ID=-1.5A VDS=--10V, VGS=-4V, ID=-1.5A VDS=--10V, VGS=-4V, ID=-1.5A IS=--1.5A, VGS=0V Ratings min typ 10 35 32 27 3.2 0.8 0.6 --0.87 --1.5 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7018A-010 Electrical Connection 6 0.6 5 4 2.9 0.15 6 5 4 0.2 2.8 1.6 0.05 1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1 Top view 1 0.6 2 3 1 2 0.95 3 0.4 1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1 SANYO : CPH6 Switching Time Test Circuit VIN 0V --4V VIN ID= --0.8A RL=12.5Ω VOUT VDD= --10V 0.9 0.2 D PW=10µs D.C.≤1% G CPH6621 P.G 50Ω S --2.0 --1.8 --1.6 ID -- VDS V --4.0V --3. 0 --2 V .5V --2 .0V --2.0 --1.8 --1.6 ID -- VGS VDS= --10V Drain Current, ID -- A Drain Current, ID -- A --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --6.0 --1.4 --1.4 --1.2 --1.0 --0.8 VGS= --1.5V --0.2 0 --0.7 --0.8 --0.9 --1.0 0 --0.5 --1.0 --25 --1.5 °C --0.4 Ta= 7 5°C --0.6 25° C --2.0 --2.5 IT02655 Drain-to-Source Voltage, VDS -- V IT02654 Gate-to-Source Voltage, VGS -- V No. A0847-2/4 CPH6621 600 RDS(on) -- VGS Ta=25°C 500 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 500 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 400 400 300 300 200 ID= --0.4A --0.8A 200 V --2.5 S= A, VG V --0.4 I D= = --4.0 A, V GS 0.8 I D= -- 100 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 IT02656 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Ambient Temperature, Ta -- °C IT02657 yfs -- ID IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 7 5 VDS= --10V 2 1.0 7 5 3 2 °C -25 =Ta °C 75 °C 25 Source Current, IS -- A 3 0.1 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Drain Current, ID -- A 100 7 IT02658 1000 7 5 SW Time -- ID Diode Forward Voltage, VSD -- V Ta=7 5°C 25°C --25°C IT02659 Ciss, Coss, Crss -- VDS f=1MHz VDD= --10V VGS= --4V td(off) Switching Time, SW Time -- ns 5 3 2 Ciss, Coss, Crss -- pF 3 2 Ciss tf 100 7 5 3 2 tr 10 7 5 3 3 5 7 --0.1 2 3 td(on) Coss Crss 10 5 7 --1.0 2 3 5 0 --5 --10 --15 --20 IT02661 Drain Current, ID -- A --4 IT02660 --10 7 5 3 2 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --1.5A IDP= --6.0A Drain Current, ID -- A --3 ID= --1.5A 10 PW≤10µs 10 0 1m µ s s m --1.0 7 5 3 2 --0.1 7 5 3 2 s 10 0m op er io at D C s --2 Operation in this area is limited by RDS(on). n 25 a= (T ) °C --1 0 0 0.5 1 1.5 2 2.5 3 3.5 IT04051 --0.01 --0.01 2 3 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 5 7 --0.1 23 5 7--1.0 23 5 7 --10 23 5 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V IT12454 No. A0847-3/4 CPH6621 1.4 PD -- Ta Mounted on a ceramic board(900mm2✕0.8mm)1unit Allowable Power Dissipation, PD -- W 1.2 1.0 0.9 0.8 To t al Di 0.6 1u ss ip nit ati on 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT12455 Note on usage : Since the CPH6621 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2007. Specifications and information herein are subject to change without notice. PS No. A0847-4/4