CPH6622

Ordering number : ENA0398A CPH6622 SANYO Semiconductors DATA SHEET CPH6622 Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. With a built-in gate resistor. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤12ms, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions Ratings 20 ±12 3.0 18 0.9 1.0 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS= ±8V, VDS=0V VDS=10V, ID=1mA Ratings min 20 1 ±10 0.6 1.2 typ max Unit V µA µA V Marking : BW Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80807 TI IM / 71807PE TI IM TC-00000813 No. A0398-1/4 CPH6622 Continued from preceding page. Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol yfs RDS(on)1 RDS(on)2 td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, ID=1.5A ID=3A, VGS=4V ID=3A, VGS=2.5V See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A IS=3A, VGS=0V Ratings min 1.5 46 50 typ 3.3 58 75 210 690 1400 1000 10.5 1.0 2.8 0.8 1.2 70 100 max Unit S mΩ mΩ ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7018A-013 2.9 0.15 Electrical Connection 6 5 4 6 5 4 0.2 2.8 1.6 0.05 1 : Source1 2 : Drain 3 : Source2 4 : Gate2 5 : Drain 6 : Gate1 Top view 0.6 1 2 3 0.6 1 2 0.95 3 0.4 1 : Source1 2 : Drain 3 : Source2 4 : Gate2 5 : Drain 6 : Gate1 SANYO : CPH6 Switching Time Test Circuit VIN 4V 0V VIN ID=1.5A RL=6.67Ω VDD=10V 0.9 0.2 D PW=10µs D.C.≤1% VOUT G Rg P.G 50Ω CPH6622 S Rg=1kΩ No. A0398-2/4 CPH6622 3 ID -- VDS 6V 4V 3 ID -- VGS VDS=10V 3V 2.5 V 2V 8V Drain Current, ID -- A 2 .8V V GS=1 Drain Current, ID -- A 2 Ta=75° C 0 0.5 1.0 25°C 1 0 1.5 1 0 0 0.1 0.2 0.3 0.4 0.5 IT12752 --25°C 2.0 2.5 3.0 IT12753 Drain-to-Source Voltage, VDS -- V 150 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 150 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C ID=3A 100 100 A =3 , ID .5V =2 =3A GS V , ID .0V =4 V GS 50 50 0 0 2 4 6 8 10 IT12754 0 --100 --50 0 50 100 150 200 IT12755 Gate-to-Source Voltage, VGS -- V 7 Ambient Temperature, Ta -- °C 5 3 2 yfs -- ID IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S VDS=10V 5 3 3 2 0.1 7 5 3 2 2 °C 25 75 °C 1.0 0.1 0.01 2 3 5 7 1.0 2 3 0 0.2 0.4 0.6 0.8 1.0 1.2 IT12757 Drain Current, ID -- A 3 2 IT12756 10 9 SW Time -- ID td (off) tf Diode Forward Voltage, VSD -- V VGS -- Qg Gate-to-Source Voltage, VGS -- V VDS=10V ID=3A Switching Time, SW Time -- ns 8 7 6 5 4 3 2 1 1000 7 5 tr 3 2 t d(on) 100 0.1 0 2 3 5 7 1.0 2 3 5 7 0 1 2 3 4 5 6 7 8 9 10 Drain Current, ID -- A IT10968 Total Gate Charge, Qg -- nC Ta=7 5°C 25°C --25° C °C -25 =Ta Source Current, IS -- A 1.0 7 5 IT12758 No. A0398-3/4 CPH6622 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO Allowable Power Dissipation, PD -- W IDP=18A PW≤10µs 10 0µ s 1m s 10 ms 1.2 PD -- Ta Mounted on a ceramic board(900mm2✕0.8mm)1unit 1.0 0.9 0.8 Drain Current, ID -- A ID=3A DC op 10 era tio 0m s To t 0.6 al n( Ta = Di ss Operation in this area is limited by RDS(on). 25 °C ) 1u 0.4 ip nit ati on 0.01 0.01 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.2 0 0 20 40 60 80 100 120 140 160 IT12703 Drain-to-Source Voltage, VDS -- V Ambient Temperature, Ta -- °C IT12704 Note on usage : Since the CPH6622 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2007. Specifications and information herein are subject to change without notice. PS No. A0398-4/4