CPH6702

Ordering number:EN6354 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode CPH6702 DC/DC Converter Applications Features · Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. · The CPH6702 consists of two chips which are equivalent to the CPH3114 and the SBS006, respectively. · Ultrasmall-sized package permitting applied sets to be made small and slim (mounting height 0.9mm). Package Dimensions unit:mm 2153A [CPH6702] 0.2 0.05 1.6 2.8 Ratings –15 –15 –5 –1.5 –3 –300 Mounted on a ceramic board (600mm2×0.8mm) 1.3 150 –55 to +125 30 30 0.7 50Hz sine wave, 1 cycle 10 –55 to +125 –55 to +125 2.9 6 5 4 0.6 0.15 1 2 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg VCBO VCEO VEBO IC ICP IB PC Tj Tstg Symbol Conditions 0.7 0.9 0.2 3 0.95 0.6 1 : Emitter 2 : Base 3 : Anode 4 : Common (Collector, Cathode) 5 : Common (Collector, Cathode) 6 : Common (Collector, Cathode) SANYO : CPH6 Unit V V V A A mA W ˚C ˚C V V A A ˚C ˚C Marking : PB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13100TS (KOTO) TA-2671 No.6354–1/4 CPH6702 Electrical Characteristics at Ta = 25˚C Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF1 VF2 VF3 IR C trr IR=0.5mA IF=0.3A IF=0.5A IF=0.7A VR=10V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 20 10 30 0.35 0.42 0.5 0.40 0.47 0.55 200 V V V V µA pF ns ICBO IEBO hFE fT Cob VCE(sat) VCB=–12V, IE=0 VEB=–4V, IC=0 VCE=–2V, IC=–100mA VCE=–2V, IC=–300mA VCB=–10V, f=1MHz IC=–750mA, IB=–15mA –15 –15 –5 50 87 15 200 350 17 –120 –0.85 –180 –1.2 –0.1 –0.1 560 MHz pF mV V V V V ns ns ns µA µA Symbol Conditions Ratings min typ max Unit VBE(sat) IC=–750mA, IB=–15mA V(BR)CBO IC=–10µA, IE=0 V(BR)CEO IC=–1mA, RBE=∞ V(BR)EBO ton tstg tf IC=–10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Electrical Connection 4 5 6 1 2 3 (Top view) Switching Time Test Circuit [TR] PW=20µs D.C.≤1% INPUT RB VR 50Ω + 220µF + 470µF –5V VBE=5V VCC=–5V –20IB1= 20IB2= IC=–750mA RL IB2 IB1 OUTPUT [SBD] 100mA Duty≤10% 10mA 10µs 50Ω 100Ω 10Ω 100mA trr No.6354–2/4 CPH6702 --1.0 --0.9 IC -- VBE [TR] VCE=--2V 1000 7 5 3 2 hFE -- IC Ta=75°C --25°C [TR] VCE=--2V Collector Current, IC – A --0.8 --0.7 --0.6 DC Current Gain, hFE 100 7 5 3 2 10 7 5 3 2 25°C Ta=75°C --0.4 --0.3 --0.2 --0.1 0 0 --0.2 --0.4 25°C --25°C --0.5 --0.6 --0.8 --1.0 --1.2 IT01661 1.0 --0.01 2 3 5 Collector-to-Emitter Voltage, VCE – V 1000 7 Collector Current, IC – A 7 --0.1 2 3 5 7 --1.0 2 3 5 IT01662 f T -- IC [TR] VCE=--2V Output Capacitance, Cob – pF 100 7 5 3 2 Cob -- VCB [TR] f=1MHz Gain-Bandwidth Product, f T – MHz 5 3 2 100 7 5 3 2 10 7 5 3 2 10 --0.01 2 3 5 Collector Current, IC – A 7 --0.1 2 3 5 7 --1.0 2 3 1.0 --1.0 2 3 5 7 --10 2 3 IT01663 Collector-to-Base Voltage, VCB – V --1000 IT01664 --1000 VCE(sat) -- IC [TR] IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 7 5 3 2 VCE(sat) -- IC [TR] IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 7 5 3 2 --100 7 5 3 2 C 5° =7 Ta 5°C --2 --100 7 5 3 2 7 Ta= ° --25 C 5°C 25 °C °C 25 --10 7 --0.01 2 3 5 Collector Current, IC – A 7 --0.1 2 3 5 7 --1.0 2 3 --10 7 --0.01 2 3 5 IT01665 Collector Current, IC – A 7 --0.1 2 3 5 7 --1.0 2 3 IT01666 --10 7 VBE(sat) -- IC [TR] IC / IB=50 Collector Current, IC – A --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO ICP=--3A IC=--1.5A 10 ms 50 [TR] Collector-to-Emitter Saturation Voltage, VCE (sat) – V 5 3 2 10 1m 0µ s --1.0 7 5 3 2 Ta=--25°C 75°C DC 100 op ms era tio n s 0µ s 25°C --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.01 --0.1 Ta=25°C Single pulse Mounted on a ceramic board(600mm2×0.8mm) 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector Current, IC – A IT01667 Collector-to-Emitter Voltage, VCE – V IT01668 No.6354–3/4 CPH6702 1.8 1.6 PC -- Ta [TR] 10 7 5 IF -- VF [SBD] Collector Dissipation, PC – W M ou nte d Forward Current, IF – A 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 3 2 1.0 7 5 on a .8m Ambient Temperature, Ta – °C 40 60 80 100 120 140 160 0.01 0 0.2 75° 0.4 C m) 3 2 50 °C cer am ic b oa rd (60 0m m 10 0°C 5° C 2 ×0 0.1 7 5 Ta =1 2 25 ° 3 2 C 0.6 0.8 IT01670 IT01669 Forward Voltage, VF – V Average Forward Power Dissipation, PF(AV) -- W 100 7 5 3 2 IR -- VR [SBD] 0.7 PF(AV) -- IO ⁄Rectangular wave θ=60° [SBD] 0.6 ¤Rectangular wave θ=120° Reverse Current, IR – mA 10 7 5 3 2 1.0 7 5 3 2 Ta= °C 125 100°C 75°C 50°C ‹Rectangular wave θ=180° 0.5 ›Sine wave θ=180° ¤› ⁄ ‹ 0.4 Rectangular wave 0.3 θ Sine wave 0.1 0 0 180° 360° 360° 0.2 0.1 7 5 3 2 0.01 0 5 25°C 10 15 20 25 30 IT01671 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Reverse Voltage, VR – V Average Forward Current, IO -- A IT01672 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2000. Specifications and information herein are subject to change without notice. PS No.6354–4/4