CPH6901

Ordering number : ENN8257 CPH6901 N-Channel Silicon Junction FET CPH6901 Features • • • Low-Frequency General-Purpose Amplifier, Differential Amplifier, Analog Switch Applications Composite type with 2 FET contained in a CP package currently in use, improving the mounting efficiency greatly. The CPH6901 is formed with two chips, being equivalent to the 2SK303, placed in one package. Optimal for differential amplification due to excellent thermal equilibrium and pair capability. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Voltage Drain Current Allowable Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD PT Tj Tstg 1 unit Conditions Ratings 30 --30 10 10 200 300 150 --55 to +150 Unit V V mA mA mW mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Gate-to-Source Voltage Difference Drain Current Drain Current Ratio Forward Transfer Admittance Forward Transfer Admittance Ratio Input Capacitance Reverse Transfer Capacitance Static Drain-to-Source On-State Resistance Ciss Crss yfs Symbol V(BR)GDS IGSS VGS(off) ∆VGS IDSS Conditions IG=- µA, VDS=0 -10 VGS=--20V, VDS=0 VDS=10V, ID=1µA VGS Large--VGS Small VDS=10V, ID=1mA VDS=10V, VGS=0(FET1) IDSS Small / IDSS Large VDS=10V, VGS=0, f=1MHz yfsSmall / yfs / Large VDS=10V, VGS=0, f=1MHz VDS=10V, VGS=0, f=1MHz 1.2 0.9 3.0 0.9 5.0 0.9 250 pF pF Ω 4.5 mS Ratings min --30 --1.0 --0.3 --0.8 --1.25 50 3.0 typ max Unit V nA V mV mA RDS(on) VDS=10mV, VGS=0 The specifications shown above are for each individual transistor. Marking : 1G Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32505GB TS IM TA-100274 No.8257-1/4 CPH6901 Package Dimensions unit : mm 2248 0.4 5 4 3 0.6 0.2 Electrical Connection 6 5 4 0.15 1.6 1 0.95 2.9 2 0.6 2.8 0.05 1 : Drain1 2 : Source1 3 : Gate2 4 : Source2 5 : Drain2 6 : Gate1 1 2 3 0.9 1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base SANYO : CPH5 Top view 0.7 0.2 5 ID -- VDS 5 ID -- VDS 4 4 Drain Current, ID -- mA Drain Current, ID -- mA VGS=0 3 3 VGS=0 2 --0.1V --0.2V --0.1V 2 --0.2V 1 1 --0.3V --0.4V --0.3V --0.4V 0 0 0 1 2 3 4 5 ITR10350 10 0 5 10 15 20 25 30 ITR10351 5 Drain-to-Source Voltage, VDS -- V Drain-to-Source Voltage, VDS -- V ID -- VGS ID -- VGS VDS=10V VDS=10V 8 4 Drain Current, ID -- mA Ta = --2 5 °C 6 3 I DS = S m 5.0 3.0 A 4 2 mA 1.2m A 2 C 75° --1.2 --1.0 --0.8 --0.6 1 0 --1.50 --1.25 --1.00 --0.75 --0.50 --0.25 0 °C 25 --0.4 --0.2 0 0 ITR10353 Gate-to-Source Voltage, VGS -- V ITR10352 Gate-to-Source Voltage, VGS -- V No.8257-2/4 Drain Current, ID -- mA CPH6901 5 VGS(off) -- IDSS Forward Transfer Admittance, yfs -- mS 2 yfs -- ID VDS=10V f=1kHz 5.0m 3.0m A Cutoff Voltage, VGS(off) -- V 3 2 VDS=10V ID=1µA 10 7 5 3 2 A --1.0 7 5 =1. I DSS 2m A 1.0 7 5 3 2 0.1 2 3 5 7 2 3 5 7 10 ITR10355 3 2 5 7 1.0 2 3 5 Drain Current, IDSS -- mA 3 yfs -- IDSS 10 ITR10354 7 1.0 Drain Current, ID -- mA 7 RDS(on) -- IDSS VDS=10mV VGS=0 Forward Transfer Admittance, yfs -- mS 2 10 7 5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω VDS=10V VGS=0 f=1kHz 5 3 2 3 2 100 1.0 5 7 1.0 2 3 5 Drain Current, IDSS -- mA 100n 10 ITR10356 7 7 7 1.0 2 3 5 7 IGDL -- VDS Drain Current, IDSS -- mA 5 3 10 ITR10357 Ciss -- VDS Gate-to-Drain Leakage Current, IGDL -- A 3 10n 3 1n 3 100p 3 10p 3 1p 5 0 IGDL G DC DC Input Capacitance, Ciss -- pF D S ID VGS=0 f=1MHz 2 10 7 5 3 2 ID=1mA 5 10 15 20 25 ITR10358 1.0 7 1.0 2 3 5 7 10 2 3 5 7 Drain-to-Source Voltage, VDS -- V 10 Drain-to-Source Voltage, VDS -- V 16 ITR10359 Crss -- VDS NF -- f VDS=10V Rg=1kΩ Reverse Transfer Capacitance, Crss -- pF 7 5 3 2 VGS=0 f=1MHz Noise Figure, NF -- dB 14 12 10 8 6 4 2 0 10 1.0 7 5 3 2 7 1.0 2 3 5 7 10 2 3 5 7 ID=0.1mA 0.3mA 3.0mA 2 5 100 2 5 1k 2 5 10k 2 Drain-to-Source Voltage, VDS -- V ITR10360 Frequency, f -- Hz 5 100k 2 5 1M ITR10361 No.8257-3/4 CPH6901 12 11 10 NF -- f VDS=10V ID=3.0mA 240 PD -- Ta Collector Dissipation, PD -- mW 200 Noise Figure, NF -- dB 9 8 7 6 160 120 kΩ =1 Rg 5 4 3 2 1 80 10 kΩ 5 100 2 5 2 5 10k 2 5 100k 2 5 1M ITR10362 40 0 10 2 100kΩ 1k 0 0 20 40 60 80 100 120 140 160 Frequency, f -- Hz Ambient Temperature, Ta -- °C ITR10363 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2005. Specifications and information herein are subject to change without notice. PS No.8257-4/4