ECH8302

Ordering number : ENN8247 ECH8302 P-Channel Silicon MOSFET ECH8302 Features • • General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --30 ±20 --7 --40 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--1mA, VGS=0 VDS=-30V, VGS=0 VGS=±16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-3.5A ID=--3.5A, VGS=-10V ID=--2A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-10V, VGS=--10V, ID=--7A VDS=-10V, VGS=--10V, ID=--7A VDS=-10V, VGS=--10V, ID=--7A IS=--7A, VGS=0 Ratings min --30 --1 ±10 --1.0 5.7 9.5 19 34 1400 310 230 13 70 150 90 28 4.8 8.1 --0.82 --1.2 25 48 --2.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Marking : JB Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22805PE TS IM TB-00000078 No.8247-1/4 ECH8302 Package Dimensions unit : mm 2222A 0.25 0.3 8 5 0.15 Electrical Connection 8 7 6 5 0.65 2.9 0.25 1 4 1 2 3 4 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view 2.3 2.8 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Switching Time Test Circuit VIN 0V --10V VIN PW=10µs D.C.≤1% VDD= --15V ID= --3.5A RL=4.3Ω VOUT 0.07 0.9 D G P.G 50Ω ECH8302 S --7 ID -- VDS --10.0V --8.0V --6 .0V V --4. 5 --7 ID -- VGS VDS= --10V --6 .0V --3 Drain Current, ID -- A --6 Drain Current, ID -- A --3 --4.0 --4 V --5. 0 --5 V --5 --4 --3 Ta=75 °C 0 --1 --2 --2 VGS= --2.5V --2 --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1 0 25°C --25°C --3 --4 IT09329 Drain-to-Source Voltage, VDS -- V IT09328 Gate-to-Source Voltage, VGS -- V No.8247-2/4 ECH8302 70 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 60 50 50 ID= --3.5A 40 40 --2.0A 30 A, VG --2.0 I D= --4V S= 30 20 20 .5A, V G I D= --3 --10V S= 10 0 0 --2 --4 --6 --8 --10 --12 --14 --16 10 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 3 yfs -- ID IT09330 2 --10 7 5 Ambient Temperature, Ta -- °C IT09331 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 2 10 VDS= --10V Forward Current, IF -- A 7 5 3 2 1.0 7 5 3 2 0.1 --0.01 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 °C 25 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 3 5 7 --10 IT09332 --0.01 --0.1 --0.3 --0.5 --0.7 --25°C --0.9 75 Ta=7 5°C 25°C Ta -2 =- C 5° °C --1.1 --1.3 IT09333 SW Time -- ID VDD= --15V VGS= --10V 3 2 Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 2 td(off) Ciss, Coss, Crss -- pF 1000 7 5 100 7 5 3 2 tf tr td(on) 3 2 Coss Crss 10 7 5 --0.1 100 2 3 5 7 --1.0 2 3 5 7 --10 0 --5 --10 --15 --20 --25 --30 IT09335 Drain Current, ID -- A --10 --9 IT09334 7 5 3 2 Drain-to-Source Voltage, VDS -- V VGS -- Qg VDS= --10V ID= --7A Drain Current, ID -- A ASO