ECH8305

Ordering number : ENN8145 ECH8305 P-Channel Silicon MOSFET ECH8305 Features • • General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --60 ±20 --4 --20 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--1mA, VGS=0 VDS=-60V, VGS=0 VGS=±16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-2A ID=--2A, VGS=-10V ID=--1A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-30V, VGS=--10V, ID=--4A VDS=-30V, VGS=--10V, ID=--4A VDS=-30V, VGS=--10V, ID=--4A IS=--4A, VGS=0 Ratings min --60 --1 ±10 --1.0 4.3 7.3 62 82 1680 122 102 15 17 185 65 34 4.5 5.8 --0.81 --1.2 85 115 --2.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Marking : JG Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11205PE TS IM TB-00000547 No.8145-1/4 ECH8305 Package Dimensions unit : mm 2222A 0.25 0.3 8 5 0.15 Electrical Connection 8 7 6 5 0.65 2.9 0.25 1 4 1 2 3 4 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view 2.3 2.8 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Switching Time Test Circuit VIN 0V --10V VIN PW=10µs D.C.≤1% VDD= --30V ID= --2A RL=15Ω VOUT 0.07 0.9 D G P.G 50Ω ECH8305 S --4.0 ID -- VDS V --4 ID -- VGS VDS= --10V V V -6.0 V --5. 0 --3 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 --8.0 .0V Drain Current, ID -- A --10V VGS= --2.5V Drain Current, ID -- A --3 --4.0 --2 Ta=7 5°C 0 --0.5 --1.0 --1.5 --2.0 --1 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --2.5 --3.0 --3.5 Drain-to-Source Voltage, VDS -- V IT08424 Gate-to-Source Voltage, VGS -- V --25 25°C °C IT08425 No.8145-2/4 ECH8305 160 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --2A --1A 160 140 120 100 80 60 40 20 0 --60 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 120 100 80 4V = -V GS , 10V --1A = -I D= VGS , --2A I D= 60 40 20 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Gate-to-Source Voltage, VGS -- V IT08426 --40 --20 0 20 40 60 80 100 120 140 160 3 yfs -- ID Ambient Temperature, Ta -- °C --10 7 5 3 2 IT08427 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 2 10 VDS= --10V Forward Current, IF -- A 7 5 3 2 1.0 7 5 3 2 0.1 --0.01 °C 25 --0.01 7 5 3 2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 57 --10 --0.001 --0.2 Drain Current, ID -- A 7 5 IT08428 5 3 2 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V Ta= 7 --25° 25° C 5° -2 =°C Ta 75 --1.0 7 5 3 2 5° C --0.1 7 5 3 2 C C IT08429 VDD= --30V VGS= --10V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 3 2 td(off) 1000 7 5 3 2 100 7 5 3 2 tf td(on) Coss 100 7 5 3 10 7 5 tr Crss --0.1 --10 --9 Gate-to-Source Voltage, VGS -- V --8 --7 --6 --5 --4 --3 --2 --1 0 0 5 2 3 2 --1.0 Drain Current, ID -- A 5 7 3 5 7 0 --10 --20 --30 --40 --50 --60 IT08431 IT08430 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Drain-to-Source Voltage, VDS -- V VGS -- Qg VDS= --30V ID= --4A Drain Current, ID -- A ASO IDP= --20A