ECH8306

Ordering number : ENA0302 ECH8306 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8306 Features • • General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --100 ± 20 --2 --12 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=--1mA, VGS=0V VDS=-100V, VGS=0V VGS=± 16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=--1A ID=--1A, VGS=-10V ID=--0.5A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-50V, VGS=--10V, ID=-2A VDS=-50V, VGS=--10V, ID=-2A VDS=-50V, VGS=--10V, ID=-2A IS=--2A, VGS=0V Ratings min --100 --1 ± 10 --1.2 2.9 4.9 170 195 1600 85 72 13.5 10 190 54 33 3.6 6.0 --0.8 --1.2 225 275 --2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Marking : JH Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 12506PE MS IM TB-00001929 No. A0302-1/4 ECH8306 Package Dimensions unit : mm 7011A-002 Top View 0.25 2.9 0.15 Electrical Connection 8 7 6 5 8 5 0 to 0.02 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 1 2 3 4 2.8 2.3 Top view 0.25 1 0.65 4 0.3 0.9 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Bottom View 0.07 SANYO : ECH8 Switching Time Test Circuit VIN 0V --10V VIN PW=10µs D.C.≤1% VDD= --50V ID= --1A RL=50Ω VOUT D G P.G 50Ω ECH8306 S V --10.0V --2.0 ID -- VDS --4 .0 --3 V .0V --4 ID -- VGS VDS= --10V --5 . 0V -2 =S VG .5V Drain Current, ID -- A Drain Current, ID -- A --1.5 --15 .0 --3 --8 . 0V --1.0 --2 Ta=7 5°C 0 --0.5 --1.0 --1.5 --2.0 --0.5 --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --2.5 --3.0 --3.5 Drain-to-Source Voltage, VDS -- V IT10633 Gate-to-Source Voltage, VGS -- V 25°C --25°C IT10634 No. A0302-2/4 ECH8306 400 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1A 400 350 300 250 200 150 100 50 0 --60 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 350 300 250 200 150 100 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 ID= --0.5A -0. =ID 5A , V --4 S= VG , -10 =GS V V -1. =ID 0A --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 yfs -- ID IT10635 7 5 3 2 Ambient Temperature, Ta -- °C IT10636 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS= --10V °C 7 5 3 2 2 C 5° --0.01 7 5 3 2 --0.4 --0.6 --0.8 --1.0 --1.2 IT10638 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --0.001 --0.2 Drain Current, ID -- A 1000 7 5 IT10637 3 2 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Ciss Diode Forward Voltage, VSD -- V VDD= --50V VGS= --10V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 3 2 100 7 5 3 2 10 7 5 --0.01 td(off) 1000 7 5 3 2 tf Ta= 75 1.0 --0.1 7 5 3 2 25°C td(on) 100 7 5 3 Coss Crss tr 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 57 IT10639 0 --5 --10 --15 --25° --20 = Ta --2 5° C °C 75 Source Current, IS -- A --1.0 7 5 3 2 C --25 --30 IT10640 Drain Current, ID -- A --10 --9 Drain-to-Source Voltage, VDS -- V 3 2 --10 7 5 VGS -- Qg VDS= --50V ID= --2A Drain Current, ID -- A ASO IDP= --12A ≤10µs 10 0µ s Gate-to-Source Voltage, VGS -- V --8 --7 --6 --5 --4 --3 --2 --1 0 0 5 10 15 20 25 30 35 IT10641 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --2A 10 10 1m s m s 0m Operation in this area is limited by RDS(on). --0.01 --0.01 2 3 Ta=25°C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 23 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V DC op er s ati on 25 a= (T No. A0302-3/4 °C ) 57 --100 2 IT10642 ECH8306 1.8 PD -- Ta M Allowable Power Dissipation, PD -- W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 ou nt ed on ac er am ic bo ar d (9 00 m m2 ! 0. 8m m ) Ambient Temperature, Ta -- °C IT10643 Note on usage : Since the ECH8306 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2006. Specifications and information herein are subject to change without notice. PS No. A0302-4/4