ECH8410

Ordering number : ENA1331 ECH8410 SANYO Semiconductors DATA SHEET ECH8410 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings 30 ±20 12 60 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=10V ID=3A, VGS=4.5V ID=3A, VGS=4V 1.2 7.5 7.5 13 15.5 10 18.2 22 Ratings min 30 1 ±10 2.6 typ max Unit V μA μA V S mΩ mΩ mΩ Marking : KQ Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network N2509PE TK IM TC-00002188 No. A1331-1/4 ECH8410 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=15V, VGS=10V, ID=12A VDS=15V, VGS=10V, ID=12A VDS=15V, VGS=10V, ID=12A IS=12A, VGS=0V Ratings min typ 1700 300 200 17 50 110 72 31 5.5 5.5 0.8 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7011A-002 Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.3 Electrical Connection 8 7 6 5 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top view 0.25 1 0.65 4 0.3 1 2 3 4 0.9 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Bot t om View 0.07 SANYO : ECH8 Switching Time Test Circuit VDD=15V 10V 0V VIN ID=6A RL=2.5Ω VIN G D VOUT PW=10μs D.C.≤1% P.G 50Ω S ECH8410 No. A1331-2/4 ECH8410 8.0V 12 ID -- VDS 6.0V 4.5V 4.0V 13 12 11 10 ID -- VGS VDS=10V 10 10.0V Drain Current, ID -- A Drain Current, ID -- A 8 9 8 7 6 VGS=3.0V 6 4 3 2 2 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 25° 3.0 3.5 1 C --25° C 4 Ta=7 5°C 5 4.0 Drain-to-Source Voltage, VDS -- V 40 RDS(on) -- VGS IT15056 30 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta IT14583 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=3A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 35 30 25 6A 25 20 15 10 5 0 20 15 3A , I D= =4.0V VGS 3A , I D= 4.5V S= VG 10 10.0 V GS= 6A V, I D= 5 0 2 4 6 8 10 12 14 16 18 0 --50 0 50 100 150 200 IT14585 Gate-to-Source Voltage, VGS -- V 2 | yfs | -- ID IT14584 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Ambient Temperature, Ta -- °C IS -- VSD Forward Transfer Admittance, | yfs | -- S VDS=10V 10 7 VGS=0V 3 2 1.0 7 5 3 2 0.1 0.01 = Ta C 5° --2 25 °C 75 °C Source Current, IS -- A 5 Ta= 75° C 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 23 IT14586 0.01 7 5 3 2 0.001 0.2 0.3 0.4 0.5 0.6 --25 °C 0.7 25° C 0.8 0.9 1.0 Drain Current, ID -- A 7 5 SW Time -- ID VDD=15V VGS=10V Ciss, Coss, Crss -- pF 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT14587 Switching Time, SW Time -- ns 3 2 Ciss td(off) 100 7 5 3 2 tf 1000 7 5 3 2 tr td(on) Coss Crss 10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 100 0 5 10 15 20 25 30 IT14589 Drain Current, ID -- A IT14588 Drain-to-Source Voltage, VDS -- V No. A1331-3/4 ECH8410 10 9 VGS -- Qg VDS=15V ID=12A Drain Current, ID -- A 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=60A ID=12A PW≤10μs 10 0μ s 1m s Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 IT14590 10 ms 10 0m op era s tio n( Ta =2 Operation in this 5° area is limited by RDS(on). C) DC 0.1 7 5 Ta=25°C 3 2 Single pulse When mounted on 0.01 0.01 2 3 5 7 0.1 ceramic substrate (900mm2×0.8mm) 23 5 7 1.0 23 5 7 10 23 5 IT15057 Total Gate Charge, Qg -- nC 1.8 PD -- Ta Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 When mounted on ceramic substrate (900mm2×0.8mm) 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT14986 Note on usage : Since the ECH8410 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2009. Specifications and information herein are subject to change without notice. PS No. A1331-4/4