ECH8420

Ordering number : EN8993 ECH8420 SANYO Semiconductors DATA SHEET ECH8420 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=5.2mΩ (typ.) 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings 20 ±12 14 50 1.6 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7011A-002 Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.3 Product & Package Information • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking ZA Lot No. TL 0.25 1 0.65 4 0.3 Electrical Connection 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 8 7 6 5 0.07 0.9 Bot t om View SANYO : ECH8 1 2 3 4 http://semicon.sanyo.com/en/network O1911PE TKIM TC-00002660 No.8993-1/4 ECH8420 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=14A, VGS=0V VDS=10V, VGS=4.5V, ID=14A VDS=10V, f=1MHz Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=7A ID=7A, VGS=4.5V ID=4A, VGS=2.5V ID=2A, VGS=1.8V Ratings min 20 1 ±10 0.4 14.5 5.2 8 15 2430 410 330 21 See specified Test Circuit. 88 210 115 29 4.8 8.7 0.75 1.2 6.8 11.5 22.5 1.3 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 4.5V 0V VIN VDD=10V ID=7A RL=1.43Ω D VOUT VIN PW=10μs D.C.≤1% G ECH8420 P.G 50Ω S 12 2.5V 1.8V 8.0V 6.0V 4 .5V 14 ID -- VDS 10.0V 10 8 6 4 2 0 VGS=1.5V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 21 20 VDS=10V 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 0.2 0.4 ID -- VGS Drain Current, ID -- A Drain Current, ID -- A °C Ta= 75°C 25 0.6 0.8 1.0 1.2 --2 5 1.4 1.6 °C 1.8 Drain-to-Source Voltage, VDS -- V IT16625 Gate-to-Source Voltage, VGS -- V IT16531 No.8993-2/4 ECH8420 40 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=2A 4A 7A 25 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 35 30 25 20 15 10 5 0 0 2 20 15 A I =2 1.8V, D S= VG 10 5 A I =4 2.5V, D S= VG =7A 4.5V, I D V GS= 4 6 8 10 12 IT16532 0 --50 0 50 100 150 200 IT16533 Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 | yfs | -- ID Ambient Temperature, Ta -- °C 100 7 5 3 2 IS -- VSD Forward Transfer Admittance, | yfs | -- S VDS=10V VGS=0V 0.1 7 5 3 2 Drain Current, ID -- A 1000 7 SW Time -- ID 5 7 100 IT16534 0.01 7 5 3 2 0.001 0 0.1 0.2 0.3 Ta= 7 0.4 5°C 25° C --25 °C 0.5 0.6 0.7 Ta -2 =- C 5° Source Current, IS -- A 25° C 1.0 7 5 3 2 1.0 7 5 3 2 °C 75 0.8 0.9 1.0 10000 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V IT16535 Switching Time, SW Time -- ns 5 3 2 VDD=15V VGS=10V Ciss, Coss, Crss -- pF td(off) 7 5 3 2 f=1MHz Ciss 100 7 5 3 2 10 0.1 tf 1000 7 5 3 2 100 tr Coss Crss td(on) 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 4.5 4.0 3.5 VGS -- Qg 5 7 100 IT16536 0 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V 100 7 5 3 2 ASO IT16537 Gate-to-Source Voltage, VGS -- V VDS=10V ID=14A Drain Current, ID -- A IDP=50A (PW≤10μs) ID=14A DC 1m 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 30 IT16538 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 10 s 10 op era tio n( ms 0m s Operation in this area is limited by RDS(on). Ta = 25 °C ) 0.01 0.01 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V 5 7 100 IT16539 No.8993-3/4 ECH8420 1.8 PD -- Ta When mounted on ceramic substrate (900mm2×0.8mm) Allowable Power Dissipation, PD -- W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16540 Note on usage : Since the ECH8420 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2011. Specifications and information herein are subject to change without notice. PS No.8993-4/4