ECH8502

Ordering number : ENA1758 ECH8502 SANYO Semiconductors DATA SHEET ECH8502 Features • • PNP/NPN Epitaxial Planar Silicon Transistors Gate Drive Applications • • Mounting height 0.9mm Composite type, facilitating high-density mounting Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ.)@IC=2.5A PNP : VCE(sat)= --0.12V(typ.)@IC= --2.5A Halogen free compliance Specifications ( ): PNP Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg PW≤1μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings (--50)100 (--)50 (--)6 (--)5 (--)30 (--)600 1.3 1.6 150 --55 to +150 Unit V V V A A mA W W °C °C Package Dimensions unit : mm (typ) 7011A-007 Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.3 Product & Package Information • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking MB TL LOT No. 0.25 1 0.65 4 0.3 Electrical Connection 8 7 6 5 1 : Emitter(NPN TR) 2 : Base(NPN TR) 3 : Emitter(PNP TR) 4 : Base(PNP TR) 5 : Collector(PNP TR) 6 : Collector(PNP TR) 7 : Collector(NPN TR) 8 : Collector(NPN TR) Bot t om View 0.07 0.9 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 70710EA TK IM TC-00002428 No. A1758-1/5 ECH8502 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)50V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(--)500mA VCE=(--)10V, IC=(--)500mA VCB=(--)10V, f=1MHz IC=(--)2.5A, IB=(--)125mA IC=(--)2.5A, IB=(--)125mA IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ IE=(--)10μA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (--50)100 (--)50 (--)6 (30)30 (180)280 (20)25 200 (260)290 (45)25 (--120)80 (--)0.85 (--200)120 (--)1.2 Ratings min typ max (--)0.1 (--)0.1 560 MHz pF mV V V V V ns ns ns Unit μA μA Note : The specifications shown above are for each individual transistor. Switching Time Test Circuit PW=20μs D.C.≤1% INPUT VR 50Ω IB1 IB2 RB + 100μF VBE= --5V + 470μF VCC=25V Vout RL IC=20IB1= --20IB2=2.5A (For PNP, the polarity is reversed.) --5.0 --4.5 IC -- VCE --1 A 00m --40 mA [PNP] --70 mA mA --50 5.0 IC -- VCE 50m A [NPN] 30mA 4.5 40m A Collector Current, IC -- A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 Collector Current, IC -- A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 mA 70m A --4.0 mA --30 A --20m 4.0 20mA --10mA --8mA --6mA --4mA --2mA 10mA 8mA 6mA 100 4mA 2mA IB=0mA --0.1 --0.2 --0.3 --0.4 --0.5 IT15638 0 0 IB=0mA 0.1 0.2 0.3 0.4 0.5 IT15639 Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V No. A1758-2/5 ECH8502 --5 IC -- VBE [PNP] VCE= --2V 5 IC -- VBE [NPN] VCE=2V Collector Current, IC -- A --4 4 --3 Collector Current, IC -- A 3 Ta=75° C 0 0.2 0.4 0.6 Ta=75 °C --2 2 --1 25°C --25°C 1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT15449 0 25°C --25°C 0.8 1.0 1.2 IT15640 Base-to-Emitter Voltage, VBE -- V 1000 7 5 hFE -- IC Ta=75°C [PNP] VCE= --0.5V Base-to-Emitter Voltage, VBE -- V 1000 7 5 hFE -- IC [NPN] VCE=0.5V DC Current Gain, hFE 2 25°C --25°C DC Current Gain, hFE 3 Ta=75°C 25°C 100 7 5 3 2 10 --0.01 3 --25°C 2 100 7 0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 1000 7 5 hFE -- IC Ta=75°C 5 7 --10 IT15681 2 3 5 7 0.1 2 3 5 7 1.0 2 3 [PNP] VCE= --2V Collector Current, IC -- A 1000 7 5 hFE -- IC 5 7 10 IT15641 [NPN] VCE=2V DC Current Gain, hFE 2 DC Current Gain, hFE 3 25°C --25°C Ta=75°C 25°C 100 7 5 3 2 3 --25°C 2 100 7 0.01 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 2 3 Collector Current, IC -- A 5 5 7 0.1 2 3 IT15450 VCE(sat) -- IC Collector Current, IC -- A 5 7 1.0 2 3 [PNP] IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 VCE(sat) -- IC 5 7 10 IT15642 [NPN] IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 100 7 5 3 2 --100 7 5 3 2 °C 25 °C 75 a= T C 5° --2 = Ta °C 75 C 5° --2 10 7 5 3 0.01 2 3 5 7 0.1 2 25 °C --10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 3 Collector Current, IC -- A IT15453 Collector Current, IC -- A 5 7 1.0 2 3 5 7 10 IT15643 No. A1758-3/5 ECH8502 --1000 7 VCE(sat) -- IC IC / IB=50 [PNP] Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 VCE(sat) -- IC [NPN] IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 --100 7 5 3 2 --10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 100 7 5 3 2 25 °C C 75° Ta= 5°C --2 = Ta °C 75 C 5° --2 °C 25 10 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT15644 Collector Current, IC -- A 3 VBE(sat) -- IC IT15454 Collector Current, IC -- A 3 [PNP] IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V VBE(sat) -- IC [NPN] IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 2 --1.0 7 5 Ta= --25°C 1.0 7 5 Ta= --25°C 75°C 25°C 75°C 25°C 3 2 --0.01 3 2 0.01 2 3 5 Collector Current, IC -- A 7 --0.1 2 3 5 7 --1.0 2 3 57 IT15455 2 3 5 7 0.1 2 3 5 7 1.0 2 3 3 2 Cob -- VCB Collector Current, IC -- A 100 7 [PNP] f=1MHz Output Capacitance, Cob -- pF Cob -- VCB 5 7 10 IT15645 [NPN] f=1MHz Output Capacitance, Cob -- pF 5 100 7 5 3 2 3 2 10 10 --1.0 7 1.0 2 3 5 7 --10 2 3 5 7 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 7 f T -- IC IT15452 Collector-to-Base Voltage, VCB -- V 7 [PNP] Gain-Bandwidth Product, fT -- MHz fT -- IC 7 100 IT15646 [NPN] VCE=10V Gain-Bandwidth Product, f T -- MHz 5 3 2 VCE= --10V 5 3 2 100 7 5 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 100 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT15647 Collector Current, IC -- A IT15451 Collector Current, IC -- A No. A1758-4/5 ECH8502 7 5 3 2 ASO ICP=30A [PNP/NPN] ≤1μs Collector Dissipation, PC -- W 1.8 1.6 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 PC -- Ta [PNP/NPN] When mounted on ceramic substrate (900mm2×0.8mm) Collector Current, IC -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 s 0μ 10 s 0μ 50 IC=5A DC op 10 10 1m ms s 0m tio To t s al era 1u Di n ss ip nit atio n 0.01 0.01 Ta=25°C Single pulse For PNP, minus sign is omitted. 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 57 0 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V IT15648 Ambient Temperature, Ta -- °C IT15457 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2010. Specifications and information herein are subject to change without notice. PS No. A1758-5/5